Silicon carbide (SiC) epitaxy
Lub tais epitaxial, uas tuav SiC substrate rau kev loj hlob ntawm SiC epitaxial slice, muab tso rau hauv chav tshuaj tiv thaiv thiab ncaj qha tiv tauj lub wafer.
Lub ib nrab hli sab saud yog tus nqa khoom rau lwm yam khoom siv ntawm lub chamber tshuaj tiv thaiv ntawm Sic epitaxy khoom siv, thaum lub ib nrab hli qis dua txuas nrog lub raj quartz, qhia cov roj kom tsav lub hauv paus susceptor kom tig. lawv yog qhov kub-tswj tau thiab ntsia rau hauv lub chamber tshuaj tiv thaiv yam tsis muaj kev sib cuag ncaj qha nrog lub wafer.
Si epitaxation
Lub tais, uas tuav Si substrate rau kev loj hlob Si epitaxial slice, muab tso rau hauv chav tshuaj tiv thaiv thiab ncaj qha kov lub wafer.
Lub nplhaib ua ntej cua sov nyob rau ntawm lub nplhaib sab nraud ntawm Si epitaxial substrate tais thiab siv rau kev ntsuas thiab cua sov. Nws muab tso rau hauv chav tshuaj tiv thaiv thiab tsis kov ncaj qha rau lub wafer.
Ib qho epitaxial susceptor, uas tuav Si substrate rau kev loj hlob Si epitaxial slice, muab tso rau hauv chav tshuaj tiv thaiv thiab ncaj qha kov lub wafer.
Epitaxial barrel yog cov khoom tseem ceeb siv rau hauv ntau yam txheej txheem tsim khoom semiconductor, feem ntau siv rau hauv MOCVD cov khoom siv, nrog kev ruaj khov zoo heev, tshuaj lom neeg tsis kam thiab hnav tsis kam, zoo heev rau kev siv rau hauv cov txheej txheem kub siab. Nws tiv tauj cov wafers.
| Cov khoom siv lub cev ntawm Recrystallized Silicon Carbide | |
| Vaj tse | Tus nqi ib txwm muaj |
| Kub ua haujlwm (°C) | 1600 ° C (nrog oxygen), 1700 ° C (txo qhov chaw ib puag ncig) |
| Cov ntsiab lus SiC | > 99.96% |
| Cov ntsiab lus Si pub dawb | <0.1% |
| Qhov ceev ntawm cov khoom loj | 2.60-2.70 g/cm33 |
| Pom tseeb porosity | < 16% |
| Lub zog nias | > 600 MPa |
| Lub zog khoov txias | 80-90 MPa (20°C) |
| Lub zog khoov kub | 90-100 MPa (1400 ° C) |
| Kev nthuav dav ntawm thermal @ 1500 ° C | 4.70 10-6/°C |
| Kev ua kom sov tau @1200 ° C | 23 W/m•K |
| Cov qauv elastic | 240 GPa |
| Kev tiv thaiv thermal poob siab | Zoo kawg nkaus |
| Cov khoom siv lub cev ntawm Sintered Silicon Carbide | |
| Vaj tse | Tus nqi ib txwm muaj |
| Cov Tshuaj Lom Zem | SiC> 95%, Si <5% |
| Qhov Ceev Ntau | >3.07 g/cm³ |
| Pom tseeb porosity | <0.1% |
| Modulus ntawm kev tawg ntawm 20 ℃ | 270 MPa |
| Modulus ntawm kev tawg ntawm 1200 ℃ | 290 MPa |
| Qhov nyuaj ntawm 20 ℃ | 2400 Kg/mm² |
| Kev tawg ntawm 20% | 3.3 MPa · m1/2 |
| Kev Ua Kub ntawm 1200 ℃ | 45 w/m2 .K |
| Kev nthuav dav thermal ntawm 20-1200 ℃ | 4.5 1 × 10 -6/℃ |
| Kub tshaj plaws ua haujlwm | 1400 ℃ |
| Kev tiv thaiv thermal poob siab ntawm 1200 ℃ | Zoo |
| Cov khoom siv lub cev yooj yim ntawm CVD SiC zaj duab xis | |
| Vaj tse | Tus nqi ib txwm muaj |
| Cov Qauv Siv Crystal | FCC β theem polycrystalline, feem ntau yog (111) taw qhia |
| Qhov Ceev | 3.21 g/cm³ |
| Qhov nyuaj 2500 | (500g thauj khoom) |
| Qhov Loj ntawm Cov Nplej | 2 ~ 10μm |
| Kev Ntshiab Tshuaj | 99.99995% |
| Peev Xwm Kub | 640 J·kg-1·K-1 |
| Kub Sublimation | 2700 ℃ |
| Lub zog flexural | 415 MPa RT 4-point |
| Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
| Kev Ua Kub | 300W·m-1·K-1 |
| Kev Nthuav Dav Kub (CTE) | 4.5 × 10-6 K -1 |
Cov yam ntxwv tseem ceeb
Qhov saum npoo yog ntom thiab dawb ntawm cov qhov hws.
Kev huv siab, tag nrho cov ntsiab lus tsis huv <20ppm, airtightness zoo.
Kev kub siab ua haujlwm, lub zog nce nrog kev siv kub nce ntxiv, ncav cuag tus nqi siab tshaj plaws ntawm 2750 ℃, sublimation ntawm 3600 ℃.
Cov modulus elastic qis, thermal conductivity siab, coefficient thermal expansion qis, thiab thermal shock zoo heev.
Kev ruaj khov tshuaj zoo, tiv taus cov kua qaub, alkali, ntsev, thiab cov organic reagents, thiab tsis muaj kev cuam tshuam rau cov hlau molten, slag, thiab lwm yam corrosive media. Nws tsis oxidize tseem ceeb hauv huab cua hauv qab 400 C, thiab tus nqi oxidation nce ntxiv ntawm 800 ℃.
Tsis muaj roj tso tawm thaum kub siab, nws tuaj yeem tswj tau qhov nqus tsev ntawm 10-7mmHg ntawm ib puag ncig 1800 ° C.
Daim ntawv thov khoom
Melting crucible rau evaporation hauv kev lag luam semiconductor.
Lub qhov rooj vag hluav taws xob muaj zog heev.
Txhuam uas kov lub voltage regulator.
Graphite monochromator rau X-ray thiab neutron.
Ntau yam duab ntawm graphite substrates thiab atomic absorption tube txheej.
Cov nyhuv ntawm cov pa roj carbon pyrolytic nyob rau hauv lub tshuab tsom iav 500X, nrog rau qhov chaw ruaj khov thiab kaw.
Txheej TaC yog cov khoom siv tiv taus kub siab tiam tshiab, nrog kev ruaj khov kub zoo dua li SiC. Ua ib txheej tiv taus xeb, txheej tiv thaiv oxidation thiab txheej tiv taus hnav, tuaj yeem siv rau hauv qhov chaw siab dua 2000C, siv dav hauv aerospace ultra-high kub kub qhov chaw kub, tiam peb semiconductor ib leeg siv lead ua teb.
| Cov khoom siv lub cev ntawm TaC txheej | |
| Qhov Ceev | 14.3 (g/cm3) |
| Kev emissivity tshwj xeeb | 0.3 |
| Cov coefficient ntawm kev nthuav dav thermal | 6.3 10/K |
| Qhov nyuaj (HK) | 2000 HK |
| Kev Tiv Thaiv | 1x10-5 Ohm*cm |
| Kev ruaj khov ntawm cua sov | <2500 ℃ |
| Kev hloov pauv loj ntawm graphite | -10~-20um |
| Txheej tuab | ≥220um tus nqi ib txwm muaj (35um ± 10um) |
Cov khoom siv CVD SILICON CARBIDE khov kho tau lees paub tias yog qhov kev xaiv tseem ceeb rau RTP/EPI rings thiab bases thiab plasma etch cavity parts uas ua haujlwm ntawm qhov kub siab uas xav tau (> 1500 ° C), qhov yuav tsum tau ua kom huv si yog qhov siab tshwj xeeb (> 99.9995%) thiab kev ua tau zoo tshwj xeeb thaum cov tshuaj tiv thaiv siab tshwj xeeb. Cov ntaub ntawv no tsis muaj cov theem thib ob ntawm ntug noob, yog li lawv cov khoom tsim cov khoom me me dua li lwm cov ntaub ntawv. Tsis tas li ntawd, cov khoom no tuaj yeem ntxuav tau siv HF/HCI kub nrog kev puas tsuaj me ntsis, ua rau muaj cov khoom me me thiab lub neej ua haujlwm ntev dua.
