CVD Ntau Silicon Carbide (SiC)
Txheej txheem cej luam:CVDCov khoom siv silicon carbide (SiC)yog ib yam khoom siv uas neeg xav tau heev hauv cov khoom siv plasma etching, cov ntawv thov thermal processing (RTP), thiab lwm yam txheej txheem tsim khoom semiconductor. Nws cov khoom siv kho tshuab, tshuaj lom neeg, thiab thermal zoo heev ua rau nws yog ib yam khoom zoo tagnrho rau cov ntawv thov thev naus laus zis siab heev uas xav tau kev ua haujlwm siab thiab ruaj khov.
Cov ntawv thov ntawm CVD Bulk SiC:Cov SiC ntau yog qhov tseem ceeb hauv kev lag luam semiconductor, tshwj xeeb tshaj yog hauv cov tshuab plasma etching, qhov twg cov khoom xws li cov nplhaib tsom, cov taub hau da dej roj, cov nplhaib ntug, thiab cov phaj tau txais txiaj ntsig los ntawm SiC qhov kev tiv thaiv corrosion zoo heev thiab thermal conductivity. Nws siv txuas mus rauRTPcov kab ke vim SiC lub peev xwm los tiv taus qhov kub hloov pauv sai yam tsis muaj kev puas tsuaj loj.
Ntxiv rau cov khoom siv etching, CVDSiC ntauyog qhov nyiam nyob rau hauv cov cub tawg diffusion thiab cov txheej txheem loj hlob siv lead ua, qhov twg xav tau kev ruaj khov thermal siab thiab tiv taus cov tshuaj lom neeg hnyav. Cov cwj pwm no ua rau SiC yog cov khoom siv xaiv rau cov ntawv thov uas xav tau ntau uas muaj qhov kub siab thiab cov pa roj corrosive, xws li cov uas muaj chlorine thiab fluorine.
Cov txiaj ntsig ntawm CVD Bulk SiC Cheebtsam:
•Kev Ceev Siab:Nrog qhov ceev ntawm 3.2 g / cm³,CVD ntau SiCcov khoom siv no tiv taus kev hnav thiab kev cuam tshuam ntawm cov khoom siv.
•Kev Ua Haujlwm Thermal Zoo Tshaj Plaws:Muab cov thermal conductivity ntawm 300 W / m·K, bulk SiC tswj tau cua sov zoo, ua rau nws zoo tagnrho rau cov khoom uas raug rau cov voj voog kub heev.
•Kev Tiv Thaiv Tshuaj Zoo Tshaj Plaws:Qhov tsis tshua muaj zog ntawm SiC nrog cov pa roj etching, suav nrog cov tshuaj chlorine thiab fluorine, ua kom lub neej ntawm cov khoom siv ntev.
•Kev Tiv Thaiv Kho Tau: CVD ntau SiCresistivity tuaj yeem hloov kho tau hauv qhov ntau ntawm 10⁻²–10⁴ Ω-cm, ua rau nws hloov tau raws li cov kev xav tau tshwj xeeb ntawm etching thiab semiconductor.
•Cov Coefficient ntawm Kev Nthuav Dav Kub:Nrog rau qhov coefficient ntawm thermal expansion ntawm 4.8 x 10⁻⁶/°C (25–1000°C), CVD bulk SiC tiv taus thermal shock, tswj kev ruaj khov txawm tias thaum lub sijhawm cua sov thiab txias sai.
•Kev ruaj khov hauv Plasma:Kev raug rau cov plasma thiab cov pa roj reactive yog qhov tsis zam hauv cov txheej txheem semiconductor, tab sisCVD ntau SiCmuaj kev tiv thaiv zoo dua rau kev xeb thiab kev puas tsuaj, txo qhov zaus hloov pauv thiab cov nqi kho tag nrho.
Cov Lus Qhia Txog Kev Siv:
•Txoj kab uas hla:Ntau tshaj 305 hli
•Kev tiv taus:Kho tau raws li 10⁻²–10⁴ Ω-cm
•Qhov Ceev:3.2 g/cm³
•Kev Ua Kub:300 W/m·K
•Cov Coefficient ntawm Kev Nthuav Dav Kub:4.8 x 10⁻⁶/°C (25–1000°C)
Kev Kho Kom Haum thiab Kev Yooj Yim:NtawmSemicera Semiconductor, peb nkag siab tias txhua daim ntawv thov semiconductor yuav xav tau cov lus qhia sib txawv. Yog vim li cas peb cov khoom siv CVD bulk SiC tuaj yeem hloov kho tau tag nrho, nrog rau kev hloov kho tau resistivity thiab qhov ntev kom haum rau koj cov khoom siv xav tau. Txawm hais tias koj tab tom ua kom zoo dua koj cov plasma etching systems lossis nrhiav cov khoom siv ruaj khov hauv RTP lossis cov txheej txheem diffusion, peb cov CVD bulk SiC muab kev ua tau zoo tsis muaj qhov kawg.
