Silicon carbide yog ib hom carbide ua los ntawm cov khoom siv hluavtaws uas muaj SiC molecule. Thaum lub zog ua haujlwm, silica thiab carbon feem ntau tsim nyob rau qhov kub siab tshaj 2000 ° C. Silicon carbide muaj qhov ceev theoretical ntawm 3.18g / cm3, Mohs hardness uas ua raws li pob zeb diamond, thiab microhardness ntawm 3300kg / mm3 ntawm 9.2 thiab 9.8. Vim nws qhov nyuaj siab thiab kev tiv taus hnav siab, nws muaj cov yam ntxwv ntawm kev tiv taus kub siab thiab siv rau ntau yam khoom siv kho tshuab uas tiv taus hnav, tiv taus corrosion thiab kub siab. Nws yog ib hom tshiab ntawm cov thev naus laus zis ceramic uas tiv taus hnav.
1, Cov khoom siv tshuaj lom neeg.
(1) Kev tiv thaiv oxidation: Thaum cov khoom siv silicon carbide raug cua sov rau 1300 ° C hauv huab cua, cov txheej tiv thaiv silicon dioxide pib tsim rau ntawm qhov chaw ntawm nws cov silicon carbide siv lead ua. Nrog rau qhov tuab ntawm cov txheej tiv thaiv, sab hauv silicon carbide txuas ntxiv oxidize, yog li ntawd silicon carbide muaj kev tiv thaiv oxidation zoo. Thaum qhov kub ncav cuag ntau dua 1900K (1627 ° C), cov yeeb yaj kiab tiv thaiv silicon dioxide pib puas tsuaj, thiab qhov oxidation ntawm silicon carbide tau nce ntxiv, yog li 1900K yog qhov kub ua haujlwm ntawm silicon carbide hauv huab cua oxidizing.
(2) Acid thiab alkali tsis kam: vim yog lub luag haujlwm ntawm silicon dioxide tiv thaiv zaj duab xis, silicon carbide muaj cov khoom hauv lub luag haujlwm ntawm silicon dioxide tiv thaiv zaj duab xis.
2, Cov khoom siv lub cev thiab cov khoom siv kho tshuab.
(1) Qhov Ceev: Qhov ceev ntawm cov khoom me me ntawm ntau yam silicon carbide crystals yog ze heev, feem ntau suav tias yog 3.20g / mm3, thiab qhov ceev ntawm cov khoom me me ntawm silicon carbide abrasives yog nruab nrab ntawm 1.2-1.6g / mm3, nyob ntawm qhov loj me ntawm cov khoom me me, cov khoom me me thiab cov duab ntawm cov khoom me me.
(2) Qhov nyuaj: Mohs qhov nyuaj ntawm silicon carbide yog 9.2, qhov micro-density ntawm Wessler yog 3000-3300kg / mm2, qhov nyuaj ntawm Knopp yog 2670-2815kg / mm2, qhov abrasive yog siab dua corundum, ze rau pob zeb diamond, cubic boron nitride thiab boron carbide.
(3) Kev ua tau zoo ntawm cov cua sov: cov khoom silicon carbide muaj cov cua sov ua tau zoo, cov coefficient ntawm kev nthuav dav thermal me me, kev tiv taus thermal poob siab siab, thiab yog cov khoom siv refractory zoo.
3, Cov khoom hluav taws xob.
| Khoom | Chav tsev | Cov ntaub ntawv | Cov ntaub ntawv | Cov ntaub ntawv | Cov ntaub ntawv | Cov ntaub ntawv |
| RBsic (sisic) | NBSiC | SSiC | RSiC | OSiC | ||
| Cov ntsiab lus SiC | % | 85 | 76 | 99 | ≥99 | ≥90 |
| Cov ntsiab lus silicon dawb | % | 15 | 0 | 0 | 0 | 0 |
| Kub siab tshaj plaws rau kev pabcuam | ℃ | 1380 xyoo | 1450 xyoo | 1650 xyoo | 1620 xyoo | 1400 |
| Qhov Ceev | g/cm^3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Qhib porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Lub zog khoov 20 ℃ | Mpa | 250 | 160 | 380 | 100 | / |
| Lub zog khoov 1200 ℃ | Mpa | 280 | 180 | 400 | 120 | / |
| Modulus ntawm elasticity 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus ntawm elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Kev ua haujlwm thermal 1200 ℃ | W/mk | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficient ntawm thermalexpansion | K^-lx10^-8 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | kg/m^m2 | 2115 | / | 2800 | / | / |
