CVD SiC txheej
Silicon carbide (SiC) epitaxy
Lub tais epitaxial, uas tuav lub SiC substrate rau loj hlob SiC epitaxial daim, muab tso rau hauv cov tshuaj tiv thaiv chamber thiab ncaj qha hu rau lub wafer.
Sab sauv ib nrab hli yog cov khoom siv rau lwm cov khoom siv ntawm cov tshuaj tiv thaiv chamber ntawm Sic epitaxy cov cuab yeej, thaum lub hli qis ib nrab hli txuas nrog lub raj quartz, qhia cov roj los tsav lub hauv paus susceptor tig.lawv yog kub-tswj thiab ntsia rau hauv cov tshuaj tiv thaiv chamber yam tsis muaj kev sib cuag ncaj qha nrog lub wafer.
Yog epitaxy
Lub tais, uas tuav lub Si substrate rau loj hlob Si epitaxial daim, muab tso rau hauv cov tshuaj tiv thaiv chamber thiab ncaj qha hu rau lub wafer.
Lub nplhaib preheating yog nyob rau ntawm lub nplhaib sab nraud ntawm Si epitaxial substrate tais thiab yog siv rau calibration thiab cua sov.Nws yog muab tso rau hauv cov tshuaj tiv thaiv chamber thiab tsis ncaj qha mus cuag lub wafer.
Ib qho epitaxial susceptor, uas tuav Si substrate rau loj hlob Si epitaxial hlais, muab tso rau hauv cov tshuaj tiv thaiv chamber thiab ncaj qha hu rau wafer.
Epitaxial chim yog cov khoom tseem ceeb uas siv nyob rau hauv ntau yam semiconductor manufacturing txheej txheem, feem ntau yog siv nyob rau hauv MOCVD cov cuab yeej, nrog zoo heev thermal stability, tshuaj tiv thaiv thiab hnav tsis kam, heev haum rau siv nyob rau hauv high kub txheej txheem.Nws tiv tauj cov wafers.
| 重结晶碳化硅物理特性 Lub cev muaj zog ntawm Recrystalized Silicon Carbide | |
| 性质 / Khoom | 典型数值 / Tus nqi zoo |
| Ua haujlwm kub (°C) | 1600 ° C (nrog oxygen), 1700 ° C (txo ib puag ncig) |
| SiC 含量 / SiC cov ntsiab lus | > 99.96% |
| 自由 Si 含量 / Dawb Si cov ntsiab lus | <0.1% |
| 体积密度 / Bulk density | 2.60-2.70 g / cm33 |
| 气孔率 / Pom porosity | <16% |
| 抗压强度 / Compression zog | > 600 MPa |
| 常温抗弯强度 / Txias dabtsi yog khoov zog | 80-90 MPa (20 ° C) |
| 高温抗弯强度 Kub dabtsi yog khoov zog | 90-100 MPa (1400 ° C) |
| 热膨胀系数 / Thermal expansion @ 1500 ° C | 4.70 10-6/°C |
| Kev ntsuas kub / Thermal conductivity @ 1200 ° C | 23 W/m•K |
| Elastic Modulus | 240 GPa |
| 抗热震性 / Thermal shock resistance | Zoo heev |
| 烧结碳化硅物理特性 Lub cev muaj zog ntawm Sintered Silicon Carbide | |
| 性质 / Khoom | 典型数值 / Tus nqi zoo |
| 化学成分 / Chemical Composition | SiC> 95%, Si <5% |
| 密度 / Bulk Density | > 3.07 g/cm³ |
| 显气孔率 / Pom porosity | <0.1% |
| 常温抗弯强度 / Modulus ntawm rupture ntawm 20 ℃ | 270 MPa rau |
| 高温抗弯强度 / Modulus ntawm rupture ntawm 1200 ℃ | 290 MPa rau |
| Hardness ntawm 20 ℃ | 2400 Kg / hli |
| 断裂韧性 / Fracture toughness ntawm 20% | 3.3 MPa · m1/2 |
| 导热系数 / Thermal conductivity ntawm 1200 ℃ | 45 w/m |
| 热膨胀系数 / Thermal expansion ntawm 20-1200 ℃ | 4.5 1 × 10 -6/ ℃ |
| 最高工作温度 / Max.ua haujlwm kub | 1400 ℃ |
| 热震稳定性 / Thermal shock resistance ntawm 1200 ℃ | Zoo |
| CVD SiC kev sib tw Cov yam ntxwv ntawm lub cev ntawm CVD SiC films | |
| 性质 / Khoom | 典型数值 / Tus nqi zoo |
| 晶体结构 / Crystal Structure | FCC β theem polycrystalline, feem ntau (111) taw qhia |
| 密度 / Ceev | 3.21 g / cm³ |
| 硬度 / Hardness 2500 | 维氏硬度 (500g load) |
| 晶粒大小 / Grain SiZe | 2 ~ 10 hli |
| 纯度 / Tshuaj Purity | 99.99995% |
| 热ა / Heat Capacity | 6 40j kg-1· K-1 |
| Sublimation Temperature | 2700 ℃ |
| 抗弯强度 / Flexural zog | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
| Kev Siv Hluav Taws Xob / Thermal conductivity | 300 Wm-1· K-1 |
| 热膨胀系数 / Thermal Expansion (CTE) | 4.5 × 10-6 K -1 |
Pyrolytic Carbon Txheej
Cov yam ntxwv tseem ceeb
Qhov saum npoo yog ntom thiab tsis muaj pores.
High purity, tag nrho impurity cov ntsiab lus <20ppm, zoo airtightness.
Kev kub siab ua haujlwm, lub zog nce nrog nce kev siv kub, ncav cuag tus nqi siab tshaj ntawm 2750 ℃, sublimation ntawm 3600 ℃.
Tsawg elastic modulus, siab thermal conductivity, tsis tshua muaj thermal expansion coefficient, thiab zoo heev thermal shock kuj.
Kev ruaj ntseg tshuaj zoo, tiv taus cov kua qaub, alkali, ntsev, thiab cov organic reagents, thiab tsis cuam tshuam rau cov hlau molten, slag, thiab lwm yam corrosive media.Nws tsis oxidize ntau hauv cov huab cua hauv qab 400 C, thiab oxidation tus nqi nce ntawm 800 ℃.
Yog tias tsis tso cov pa tawm ntawm qhov kub thiab txias, nws tuaj yeem tswj tau lub tshuab nqus tsev ntawm 10-7mmHg ntawm thaj tsam 1800 ° C.
Daim ntawv thov khoom
Melting crucible rau evaporation hauv kev lag luam semiconductor.
Siab zog hluav taws xob tube rooj vag.
Txhuam uas hu rau lub voltage regulator.
Graphite monochromator rau X-ray thiab neutron.
Ntau cov duab ntawm graphite substrates thiab atomic absorption raj txheej.
Pyrolytic carbon txheej nyhuv nyob rau hauv ib tug 500X microscope, nrog zoo thiab kaw nto.
CVD Tantalum Carbide Txheej
TaC txheej yog lub cim tshiab ntawm cov khoom siv kub-resistant, nrog kev kub siab zoo dua li SiC.Raws li cov txheej txheem corrosion-resistant, anti-oxidation txheej thiab hnav-resistant txheej, yuav siv tau nyob rau hauv ib puag ncig saum 2000C, dav siv nyob rau hauv aerospace ultra-siab kub kub kawg qhov chaw, lub thib peb tiam semiconductor ib tug siv lead ua kev loj hlob teb.
| 碳化钽涂层物理特性物理特性 Lub cev muaj zog ntawm TaC txheej | |
| 密度 / Ceev | 14.3 (g / cm3) |
| 比辐射率 /Specific emissivity | 0.3 |
| 热膨胀系数 / Thermal expansion coefficient | 6.3 10 / K |
| Hardness (HK) | 2000 HK |
| 电阻/Resistance | 1 x 10-5 Ohm * cm |
| Kev kub siab / Thermal stability | ≥2500 ℃ |
| 石墨尺寸变化/Graphite loj hloov | -10 ~ 20 hli |
| 涂层厚度 / Txheej thickness | ≥220um tus nqi raug (35um ± 10um) |
Khoom Silicon Carbide (CVD SiC)
Khoom CVD SILICON CARBIDE qhov chaw raug lees paub tias yog qhov kev xaiv tseem ceeb rau RTP / EPI rings thiab cov hauv paus thiab plasma etch kab noj hniav uas ua haujlwm ntawm qhov system siab yuav tsum tau ua haujlwm kub (> 1500 ° C), qhov yuav tsum tau ua rau purity yog qhov tshwj xeeb siab (> 99.9995%) thiab kev ua tau zoo tshwj xeeb tshaj yog thaum cov tshuaj tiv thaiv kab mob siab tshwj xeeb.Cov ntaub ntawv no tsis muaj cov theem nrab ntawm cov ntug ntawm cov nplej, yog li cov khoom siv tsim cov khoom tsawg dua li lwm cov ntaub ntawv.Tsis tas li ntawd, cov khoom no tuaj yeem raug ntxuav los ntawm kev siv kub HF / HCI nrog me ntsis degradation, ua rau cov khoom tsawg dua thiab ua haujlwm ntev dua.
