CVD Silicon Carbide Txheej-1

CVD SiC yog dab tsi

Chemical vapor deposition (CVD) yog cov txheej txheem nqus tsev vacuum siv los tsim cov khoom siv purity siab. Cov txheej txheem no feem ntau yog siv nyob rau hauv cov khoom lag luam semiconductor los tsim cov yeeb yaj kiab nyias ntawm cov wafers. Nyob rau hauv tus txheej txheem ntawm kev npaj SiC los ntawm CVD, lub substrate yog raug rau ib los yog ntau tshaj volatile precursors, uas reacts chemically nyob rau saum npoo ntawm substrate mus tso rau qhov xav tau SiC deposit. Ntawm ntau txoj hauv kev los npaj SiC cov ntaub ntawv, cov khoom npaj los ntawm cov tshuaj vapor deposition muaj siab uniformity thiab purity, thiab cov txheej txheem muaj zog tswj cov txheej txheem.

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CVD SiC cov ntaub ntawv yog qhov tsim nyog rau kev siv hauv kev lag luam semiconductor uas xav tau cov ntaub ntawv ua tau zoo vim tias lawv cov khoom sib xyaw ua ke zoo heev ntawm thermal, hluav taws xob thiab tshuaj lom neeg. CVD SiC Cheebtsam yog dav siv nyob rau hauv etching khoom, MOCVD khoom, Si epitaxial khoom thiab SiC epitaxial khoom, ceev ceev thermal ua khoom thiab lwm yam teb.

Zuag qhia tag nrho, ntu kev lag luam loj tshaj plaws ntawm CVD SiC cov khoom yog etching cov khoom siv. Vim nws tsis tshua muaj reactivity thiab conductivity rau chlorine- thiab fluorine-muaj etching gases, CVD silicon carbide yog ib qho khoom siv zoo tagnrho rau cov khoom xws li tsom rings hauv plasma etching khoom.

CVD silicon carbide Cheebtsam nyob rau hauv etching cov khoom muaj xws li tsom rings, roj da dej hau, tais, ntug rings, thiab lwm yam Los ntawm kev siv hluav taws xob rau lub nplhaib txhawm rau tsom lub plasma dhau los ntawm lub nplhaib, lub plasma yog tsom rau ntawm wafer los txhim kho cov kev ua haujlwm sib xws.

Cov tsoos tsom iav yog ua los ntawm silicon lossis quartz. Nrog rau kev nce qib ntawm kev sib xyaw ua ke hauv miniaturization, qhov kev thov thiab qhov tseem ceeb ntawm cov txheej txheem etching hauv kev tsim hluav taws xob sib xyaw ua ke tau nce, thiab lub zog thiab lub zog ntawm etching plasma tseem nce ntxiv. Tshwj xeeb, lub zog plasma yuav tsum tau muaj nyob rau hauv capacitively coupled (CCP) cov khoom siv plasma etching yog siab dua, yog li kev siv tus nqi ntawm cov nplhaib ua los ntawm cov khoom siv silicon carbide nce. Daim duab schematic ntawm CVD silicon carbide tsom nplhaib yog qhia hauv qab no:

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Post lub sij hawm: Jun-20-2024