Cov txheej txheem tsim cov khoom zoo SiC hmoov

Silicon carbide (SiC)yog ib qho inorganic compound paub txog nws cov khoom tshwj xeeb. Ib txwm tshwm sim SiC, hu ua moissanite, yog qhov tsawg heev. Nyob rau hauv industrial siv,silicon carbidefeem ntau yog tsim los ntawm cov txheej txheem hluavtaws.
Ntawm Semicera Semiconductor, peb siv cov txheej txheem siab heev los tsim khoomzoo SiC hmoov.

Peb cov txheej txheem suav nrog:
Acheson Method:Cov txheej txheem kev txo qis carbothermal no suav nrog kev sib xyaw cov xuab zeb purity quartz lossis crushed quartz ore nrog roj av coke, graphite, lossis anthracite hmoov. Qhov sib tov no yog tom qab ntawd rhaub kom kub tshaj 2000 ° C siv cov graphite electrode, uas ua rau cov synthesis ntawm α-SiC hmoov.
Low-Temperature Carbothermal Reduction:Los ntawm kev sib xyaw silica hmoov zoo nrog cov hmoov carbon thiab ua cov tshuaj tiv thaiv ntawm 1500 txog 1800 ° C, peb tsim β-SiC hmoov nrog txhim kho purity. Cov txheej txheem no, zoo ib yam li Acheson txoj kev tab sis ntawm qhov kub thiab txias, yields β-SiC nrog cov qauv siv lead ua txawv. Txawm li cas los xij, tom qab ua tiav kom tshem tawm cov seem carbon thiab silicon dioxide yog qhov tsim nyog.
Silicon-Carbon Direct Reaction:Txoj kev no cuam tshuam ncaj qha rau cov hlau silicon hmoov nrog carbon hmoov ntawm 1000-1400 ° C los tsim cov hmoov purity β-SiC. α-SiC hmoov tseem yog cov khoom siv tseem ceeb rau silicon carbide ceramics, thaum β-SiC, nrog nws cov qauv zoo li pob zeb diamond, yog qhov zoo tagnrho rau kev sib tsoo thiab polishing daim ntaub ntawv.
Silicon carbide nthuav tawm ob lub ntsiab siv lead ua:α thiab β. β-SiC, nrog nws lub cubic siv lead ua, nta lub ntsej muag-centered cubic lattice rau silicon thiab carbon. Nyob rau hauv sib piv, α-SiC suav nrog ntau yam polytypes xws li 4H, 15R, thiab 6H, nrog 6H yog feem ntau siv hauv kev lag luam. Qhov kub thiab txias cuam tshuam rau kev ruaj ntseg ntawm cov polytypes: β-SiC ruaj khov hauv qab 1600 ° C, tab sis saum toj no qhov kub thiab txias, nws maj mam hloov mus rau α-SiC polytypes. Piv txwv li, 4H-SiC cov ntaub ntawv nyob ib ncig ntawm 2000 ° C, thaum 15R thiab 6H polytypes yuav tsum tau kub siab tshaj 2100 ° C. Qhov tseem ceeb, 6H-SiC tseem nyob ruaj khov txawm tias kub tshaj 2200 ° C.

Ntawm Semicera Semiconductor, peb tau mob siab rau kev nce qib SiC thev naus laus zis. Peb cov kws tshaj lij hauvSiC txheejthiab cov ntaub ntawv ua kom zoo tshaj plaws thiab kev ua tau zoo rau koj daim ntawv thov semiconductor. Tshawb nrhiav seb peb cov kev daws teeb meem zoo li cas tuaj yeem txhim kho koj cov txheej txheem thiab cov khoom.