Kev Tshawb Fawb Txog Kev Loj Hlob
Covsilicon carbide (SiC)Cov noob muaju tau npaj ua raws li cov txheej txheem tau teev tseg thiab raug lees paub los ntawm SiC siv lead ua kev loj hlob. Kev loj hlob platform siv yog tus kheej tsim SiC induction kev loj hlob rauv nrog kev loj hlob ntawm 2200 ℃, kev loj hlob siab ntawm 200 Pa, thiab kev loj hlob ntev ntawm 100 teev.
Kev npaj koom nrog a6-nti SiC wafernrog ob qho tib si carbon thiab silicon ntsej muag polished, awaferthickness uniformity ntawm ≤10 µm, thiab silicon ntsej muag roughness ntawm ≤0.3 nm. Ib txoj kab uas hla 200 hli, 500 µm tuab graphite ntawv, nrog rau cov kua nplaum, cawv, thiab cov ntaub ntawv tsis muaj lint.
CovSiC wafertau spin-coated nrog nplaum rau ntawm qhov chaw sib txuas rau 15 vib nas this ntawm 1500 r / min.
Cov nplaum rau ntawm qhov sib txuas ntawm qhovSiC wafertau qhuav rau ntawm lub phaj kub.
Daim ntawv graphite thiabSiC wafer(bonding nto pem hauv ntej) tau muab tso rau hauv qab mus rau sab saum toj thiab muab tso rau hauv cov noob siv lead ua kub xovxwm cub. Qhov kub nias tau ua raws li tus txheej txheem preset kub xovxwm. Daim duab 6 qhia cov noob siv lead ua nto tom qab kev loj hlob. Nws tuaj yeem pom tau tias cov noob siv lead ua saum npoo yog du, tsis muaj cov cim qhia ntawm delamination, qhia tias SiC cov noob muaju npaj rau hauv txoj kev tshawb no muaj cov khoom zoo thiab cov txheej txheem ntom ntom.
Xaus
Xav txog cov kev sib txuas tam sim no thiab kev dai rau cov noob siv lead ua fixation, ib qho kev sib koom ua ke thiab kev dai txoj kev tau npaj. Txoj kev tshawb no tsom rau kev npaj cov yeeb yaj kiab carbon thiabwafer/ graphite daim ntawv sib txuas txheej txheem yuav tsum tau ua rau txoj kev no, ua rau cov lus xaus hauv qab no:
Lub viscosity ntawm cov nplaum yuav tsum tau rau cov yeeb yaj kiab carbon ntawm wafer yuav tsum yog 100 mPa·s, nrog rau carbonization kub ntawm ≥600 ℃. Qhov zoo tshaj plaws carbonization ib puag ncig yog ib qho chaw tiv thaiv argon. Yog tias ua tiav hauv lub tshuab nqus tsev, lub tshuab nqus tsev yuav tsum yog ≤1 Pa.
Ob qho tib si cov txheej txheem carbonization thiab kev sib koom ua ke yuav tsum tau kho qhov kub thiab txias ntawm cov pa roj carbonization thiab cov nplaum nplaum rau ntawm qhov chaw wafer kom tshem tawm cov pa roj los ntawm cov nplaum, tiv thaiv tev thiab tsis muaj qhov tsis xws luag hauv cov txheej txheem sib txuas thaum lub sij hawm carbonization.
Cov nplaum nplaum rau daim ntawv wafer / graphite yuav tsum muaj viscosity ntawm 25 mPa·s, nrog rau kev sib koom siab ntawm ≥15 kN. Thaum lub sij hawm sib txuas cov txheej txheem, qhov kub thiab txias yuav tsum tau tsa maj mam nyob rau hauv qhov ntsuas kub tsawg (<120 ℃) tshaj li ntawm 1.5 teev. Lub SiC siv lead ua kev loj hlob pov thawj tau lees paub tias kev npaj SiC noob crystals ua tau raws li qhov yuav tsum tau ua rau kev loj hlob zoo SiC siv lead ua, nrog cov noob siv lead ua du thiab tsis muaj nag lossis daus.
Post lub sij hawm: Jun-11-2024