1. Txheej txheem cej luam
Cua sov, tseem hu ua thermal processing, hais txog kev tsim cov txheej txheem uas ua haujlwm ntawm qhov kub thiab txias, feem ntau siab tshaj qhov melting point ntawm txhuas.
Cov txheej txheem cua sov feem ntau yog ua nyob rau hauv lub qhov cub kub kub thiab muaj cov txheej txheem loj xws li oxidation, impurity diffusion, thiab annealing rau siv lead ua tsis xws luag hauv semiconductor manufacturing.
Oxidation: Nws yog txheej txheem uas silicon wafer muab tso rau hauv qhov chaw ntawm oxidants xws li oxygen lossis dej vapor rau kev kho cua sov kub, ua rau cov tshuaj tiv thaiv ntawm cov silicon wafer los tsim cov oxide zaj duab xis.
impurity diffusion: yog hais txog kev siv thermal diffusion cov hauv paus ntsiab lus nyob rau hauv qhov kub thiab txias los qhia impurity ntsiab rau hauv silicon substrate raws li cov txheej txheem yuav tsum tau, kom nws muaj ib tug tshwj xeeb concentration faib, yog li hloov cov hluav taws xob khoom ntawm silicon khoom.
Annealing yog hais txog cov txheej txheem ntawm cua sov silicon wafer tom qab ion implantation los kho cov lattice defects tshwm sim los ntawm ion implantation.
Muaj peb hom khoom siv yooj yim siv rau oxidation / diffusion / annealing:
- Kab rov tav rauv;
- Lub tshuab hluav taws xob ntsug;
- Cov cua kub ceev ceev: cov cuab yeej kho cua sov ceev ceev
Cov txheej txheem kev kho cua sov ib txwm siv sijhawm ntev los kho qhov kub thiab txias kom tshem tawm kev puas tsuaj los ntawm ion implantation, tab sis nws qhov tsis zoo yog tshem tawm tsis tiav thiab tsis tshua muaj kev ua kom zoo ntawm implanted impurities.
Tsis tas li ntawd, vim yog qhov kub thiab txias thiab lub sijhawm ntev, impurity redistribution yuav tshwm sim, ua rau muaj ntau cov impurities diffuse thiab ua tsis tau raws li qhov yuav tsum tau ntawm cov junctions ntiav thiab nqaim impurity faib.
Ceev ceev thermal annealing ntawm ion-implanted wafers siv ceev thermal ua (RTP) cov cuab yeej yog ib txoj kev kho cua sov uas heats tag nrho wafer mus rau ib tug tej yam kub (feem ntau 400-1300 ° C) nyob rau hauv ib tug luv luv lub sij hawm.
Piv nrog rau cov cua kub cua sov annealing, nws muaj qhov zoo ntawm cov nyiaj siv thermal tsawg, me me ntawm impurity txav nyob rau hauv qhov chaw doping, muaj kuab paug tsawg thiab lub sijhawm ua haujlwm luv.
Cov txheej txheem thermal annealing sai tuaj yeem siv ntau lub zog, thiab lub sijhawm annealing yog qhov dav heev (los ntawm 100 txog 10-9s, xws li teeb annealing, laser annealing, thiab lwm yam). Nws tuaj yeem ua kom impurities kiag li thaum muaj txiaj ntsig zoo inhibiting impurity redistribution. Nws yog tam sim no dav siv nyob rau hauv high-end integrated circuit manufacturing txheej txheem nrog wafer diameters ntau tshaj 200mm.
2. Cov txheej txheem cua sov thib ob
2.1 Cov txheej txheem oxidation
Nyob rau hauv cov txheej txheem kev tsim hluav taws xob sib xyaw ua ke, muaj ob txoj hauv kev los ua silicon oxide zaj duab xis: thermal oxidation thiab deposition.
Cov txheej txheem oxidation yog hais txog cov txheej txheem ntawm kev tsim SiO2 ntawm qhov chaw ntawm silicon wafers los ntawm thermal oxidation. SiO2 zaj duab xis tsim los ntawm thermal oxidation yog dav siv nyob rau hauv cov txheej txheem kev tsim hluav taws xob vim nws cov khoom siv hluav taws xob zoo tshaj plaws thiab cov txheej txheem ua tau.
Nws cov ntawv thov tseem ceeb tshaj plaws yog raws li hauv qab no:
- Tiv thaiv cov khoom siv los ntawm khawb thiab kis kab mob;
- Kev txwv qhov kev sib cais ntawm cov neeg nqa khoom them nqi (nto passivation);
- Dielectric cov ntaub ntawv nyob rau hauv lub rooj vag oxide los yog cia cell lug;
- Implant masking hauv doping;
- Ib txheej dielectric ntawm cov hlau conductive txheej.
(1)Cov cuab yeej tiv thaiv thiab kev sib cais
SiO2 loj hlob nyob rau saum npoo ntawm lub wafer (silicon wafer) tuaj yeem ua cov txheej txheem zoo rau kev sib cais thiab tiv thaiv cov cuab yeej rhiab hauv silicon.
Vim tias SiO2 yog cov khoom siv tawv thiab tsis ntxeem tau (dense), nws tuaj yeem siv los cais cov khoom siv hluav taws xob zoo rau ntawm qhov chaw silicon. Cov txheej nyuaj SiO2 yuav tiv thaiv cov silicon wafer los ntawm khawb thiab kev puas tsuaj uas yuav tshwm sim thaum lub sijhawm tsim khoom.
(2)Nto passivation
Surface passivation Ib qho txiaj ntsig tseem ceeb ntawm thermally zus SiO2 yog tias nws tuaj yeem txo qhov ntom ntom ntawm silicon los ntawm kev txwv nws cov dangling bonds, cov nyhuv hu ua deg passivation.
Nws tiv thaiv hluav taws xob degradation thiab txo txoj hauv kev rau cov xau tam sim no los ntawm cov dej noo, ions lossis lwm yam kab mob sab nraud. Cov txheej nyuaj SiO2 tiv thaiv Si los ntawm khawb thiab cov txheej txheem kev puas tsuaj uas yuav tshwm sim thaum tom qab tsim khoom.
SiO2 txheej loj hlob ntawm Si nto tuaj yeem khi cov khoom siv hluav taws xob (mobile ion contamination) ntawm Si nto. Passivation tseem yog ib qho tseem ceeb rau kev tswj cov dej ntws tam sim no ntawm cov khoom siv sib txuas thiab kev loj hlob ruaj khov oxides.
Raws li cov txheej txheem zoo passivation, oxide txheej muaj cov kev xav tau zoo xws li cov tuab tuab, tsis muaj pinholes thiab voids.
Lwm qhov tseem ceeb ntawm kev siv cov oxide txheej raws li Si nto passivation txheej yog lub thickness ntawm oxide txheej. Cov txheej oxide yuav tsum yog tuab txaus los tiv thaiv cov hlau txheej los ntawm kev them nyiaj vim yog cov khoom sib txuam ntawm cov silicon nto, uas zoo ib yam li cov nqi khaws cia thiab cov yam ntxwv ntawm cov capacitors zoo tib yam.
SiO2 kuj muaj cov coefficient zoo sib xws ntawm thermal expansion rau Si. Silicon wafers nthuav dav thaum lub sijhawm ua haujlwm kub thiab kev cog lus thaum lub caij txias.
SiO2 nthuav dav lossis sib cog lus ntawm tus nqi ze ze ntawm Si, uas txo qis kev sib tw ntawm silicon wafer thaum lub sij hawm thermal. Qhov no kuj zam kev sib cais ntawm cov oxide zaj duab xis los ntawm silicon nto vim qhov kev ntxhov siab ntawm zaj duab xis.
(3)Lub rooj vag oxide dielectric
Rau feem ntau siv thiab tseem ceeb rooj vag oxide qauv nyob rau hauv MOS technology, ib tug nyias nyias oxide txheej yog siv raws li cov khoom siv dielectric. Txij li thaum lub rooj vag oxide txheej thiab Si hauv qab muaj cov yam ntxwv ntawm kev ua haujlwm siab thiab ruaj khov, lub rooj vag oxide txheej feem ntau tau txais los ntawm kev loj hlob thermal.
SiO2 muaj lub zog dielectric siab (107V / m) thiab siab resistivity (li 1017Ω·cm).
Tus yuam sij rau kev ntseeg siab ntawm MOS cov cuab yeej yog kev ncaj ncees ntawm lub rooj vag oxide txheej. Lub rooj vag qauv hauv MOS cov khoom siv tswj cov dej ntws tam sim no. Vim tias qhov oxide no yog lub hauv paus rau kev ua haujlwm ntawm microchips raws li kev siv tshuab ua haujlwm,
Yog li ntawd, zoo, zoo heev zaj duab xis thickness uniformity thiab tsis muaj impurities yog nws cov kev cai yooj yim. Txhua yam kab mob uas tuaj yeem ua rau kev ua haujlwm ntawm lub rooj vag oxide qauv yuav tsum tau tswj nruj me ntsis.
(4)Doping barrier
SiO2 tuaj yeem siv los ua txheej txheej npog zoo rau kev xaiv doping ntawm silicon nto. Thaum ib txheej oxide raug tsim rau ntawm silicon nto, SiO2 hauv pob tshab ntawm lub npog ntsej muag yog etched los ntawm lub qhov rais uas cov khoom siv doping tuaj yeem nkag mus rau silicon wafer.
Nyob qhov twg tsis muaj qhov rais, oxide tuaj yeem tiv thaiv qhov chaw silicon thiab tiv thaiv impurities los ntawm diffusing, yog li ua kom xaiv impurity implantation.
Dopants txav qeeb hauv SiO2 piv rau Si, yog li tsuas yog ib txheej oxide nyias yuav tsum tau thaiv cov dopants (nco ntsoov tias tus nqi no yog nyob ntawm qhov kub thiab txias).
Ib txheej oxide nyias (piv txwv li, 150 Å tuab) kuj tuaj yeem siv rau hauv thaj chaw uas yuav tsum tau siv ion implantation, uas tuaj yeem siv los txo qhov kev puas tsuaj rau qhov chaw silicon.
Nws kuj tso cai rau kev tswj kom zoo dua ntawm kev sib tshuam qhov tob thaum lub sij hawm impurity implantation los ntawm kev txo cov nyhuv channeling. Tom qab cog, cov oxide tuaj yeem raug xaiv tshem tawm nrog hydrofluoric acid kom cov silicon saum npoo tiaj dua.
(5)Dielectric txheej ntawm cov txheej hlau
SiO2 tsis ua hluav taws xob nyob rau hauv ib txwm muaj, yog li nws yog ib qho zoo insulator ntawm cov hlau txheej hauv microchips. SiO2 tuaj yeem tiv thaiv luv luv ntawm cov txheej hlau sab saud thiab cov txheej hlau qis, ib yam li cov insulator ntawm cov hlau tuaj yeem tiv thaiv luv luv.
Qhov kev xav tau zoo rau oxide yog tias nws tsis muaj pinholes thiab voids. Nws yog feem ntau doped kom tau txais txiaj ntsig zoo dua, uas tuaj yeem txo cov kab mob sib kis tau zoo dua. Nws yog feem ntau tau los ntawm cov tshuaj vapor deposition es tsis thermal loj hlob.
Nyob ntawm cov tshuaj tiv thaiv roj, cov txheej txheem oxidation feem ntau muab faib ua:
- Qhuav oxygen oxidation: Si + O2 → SiO2;
- Oxidation ntub dej: 2H2O (dej vapor) + Si → SiO2 + 2H2;
- Chlorine-doped oxidation: chlorine gas, xws li hydrogen chloride (HCl), dichloroethylene DCE (C2H2Cl2) los yog nws cov derivatives, yog ntxiv rau oxygen los txhim kho tus nqi oxidation thiab qhov zoo ntawm txheej oxide.
(1)Cov txheej txheem oxidation qhuav: Cov pa oxygen molecules nyob rau hauv cov tshuaj tiv thaiv roj diffuse los ntawm cov twb tsim oxide txheej, ncav lub interface ntawm SiO2 thiab Si, react nrog Si, thiab ces tsim ib txheej SiO2.
Lub Sio2 npaj los ntawm cov oxygen oxygen muaj cov qauv tuab, tuab tuab, muaj peev xwm ua kom muaj peev xwm txhaj tshuaj thiab diffusion, thiab kev rov ua dua, thiab cov txheej txheem rov ua dua. Nws qhov tsis zoo yog qhov kev loj hlob qeeb.
Txoj kev no feem ntau yog siv rau kev ua haujlwm zoo oxidation, xws li rooj vag dielectric oxidation, nyias txheej tsis oxidation, los yog pib oxidation thiab terminating oxidation thaum tuab tsis txheej oxidation.
(2)Kev ntub dej oxidation txheej txheem: Dej vapor tuaj yeem nqa ncaj qha rau hauv oxygen, lossis nws tuaj yeem tau txais los ntawm cov tshuaj tiv thaiv ntawm hydrogen thiab oxygen. Tus nqi oxidation tuaj yeem hloov pauv los ntawm kev kho qhov sib piv ib nrab ntawm hydrogen lossis dej vapor rau oxygen.
Nco ntsoov tias kom muaj kev nyab xeeb, qhov piv ntawm hydrogen rau oxygen yuav tsum tsis pub tshaj 1.88: 1. Cov pa oxidation ntub dej yog vim muaj ob qho tib si oxygen thiab dej vapor hauv cov tshuaj tiv thaiv roj, thiab dej vapor yuav decompose rau hauv hydrogen oxide (HO) ntawm qhov kub thiab txias.
Qhov diffusion tus nqi ntawm hydrogen oxide nyob rau hauv silicon oxide yog sai npaum li cas ntawm cov pa, yog li cov pa ntub dej oxidation tus nqi yog hais txog ib tug txiav txim ntawm magnitude siab tshaj qhov qhuav oxygen oxidation tus nqi.
(3)Cov txheej txheem chlorine-doped oxidation: Ntxiv nrog rau cov pa oxidation qhuav qhuav thiab ntub dej oxidation, chlorine gas, xws li hydrogen chloride (HCl), dichloroethylene DCE (C2H2Cl2) los yog nws cov derivatives, tuaj yeem muab ntxiv rau oxygen los txhim kho oxidation tus nqi thiab cov txheej txheem oxide zoo. .
Lub ntsiab yog vim li cas rau qhov nce hauv oxidation tus nqi yog tias thaum chlorine ntxiv rau oxidation, tsis tsuas yog cov reactant muaj dej vapor uas yuav ua rau kom oxidation, tab sis chlorine kuj accumulates nyob ze ntawm lub interface ntawm Si thiab SiO2. Nyob rau hauv lub xub ntiag ntawm oxygen, chlorosilicon tebchaw yog yooj yim hloov mus rau hauv silicon oxide, uas muaj peev xwm catalyze oxidation.
Qhov laj thawj tseem ceeb rau kev txhim kho cov txheej txheem oxide zoo yog tias cov tshuaj chlorine atoms hauv oxide txheej tuaj yeem ntxuav cov kev ua ntawm sodium ions, yog li txo cov oxidation tsis xws luag qhia los ntawm sodium ion paug ntawm cov khoom thiab cov txheej txheem raw khoom. Yog li, chlorine doping yog koom nrog hauv feem ntau cov txheej txheem oxidation qhuav.
2.2 Diffusion txheej txheem
Ib txwm diffusion yog hais txog kev hloov cov tshuaj los ntawm thaj chaw siab dua mus rau thaj chaw qis dua kom txog thaum lawv sib npaug. Cov txheej txheem diffusion ua raws li Fick txoj cai. Diffusion tuaj yeem tshwm sim ntawm ob lossis ntau yam khoom, thiab qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv.
Ib qho ntawm cov khoom tseem ceeb tshaj plaws ntawm cov khoom siv semiconductor yog tias lawv cov conductivity tuaj yeem hloov kho los ntawm kev ntxiv ntau hom lossis qhov ntau ntawm dopants. Hauv kev tsim hluav taws xob sib txuas, cov txheej txheem no feem ntau ua tiav los ntawm cov txheej txheem doping lossis diffusion.
Nyob ntawm lub hom phiaj tsim, cov khoom siv semiconductor xws li silicon, germanium lossis III-V compounds tuaj yeem tau txais ob qhov sib txawv semiconductor, N-hom lossis P-hom, los ntawm doping nrog tus pub impurities lossis txais impurities.
Semiconductor doping feem ntau yog ua los ntawm ob txoj kev: diffusion lossis ion implantation, txhua tus muaj nws tus yam ntxwv:
Diffusion doping tsis tshua kim, tab sis qhov concentration thiab qhov tob ntawm cov khoom siv doping tsis tuaj yeem tswj tau qhov tseeb;
Thaum ion implantation tseem kim, nws tso cai rau kev tswj hwm ntawm dopant concentration profiles.
Ua ntej xyoo 1970, qhov loj me ntawm cov duab sib xyaw ua ke yog nyob rau ntawm qhov kev txiav txim ntawm 10μm, thiab cov thev naus laus zis thev naus laus zis feem ntau siv rau doping.
Cov txheej txheem diffusion yog tsuas yog siv los hloov cov khoom siv semiconductor. Los ntawm diffusing cov khoom sib txawv rau hauv cov khoom siv semiconductor, lawv cov conductivity thiab lwm yam khoom ntawm lub cev tuaj yeem hloov pauv.
Piv txwv li, los ntawm diffusing lub trivalent keeb boron rau hauv silicon, ib tug P-hom semiconductor yog tsim; Los ntawm doping pentavalent ntsiab phosphorus los yog arsenic, ib tug N-hom semiconductor yog tsim. Thaum P-hom semiconductor nrog ntau qhov los rau hauv kev sib cuag nrog N-hom semiconductor nrog ntau electrons, PN hlws ris yog tsim.
Raws li qhov loj me me me me, cov txheej txheem isotropic diffusion ua rau nws ua tau rau dopants kom diffuse mus rau sab nraud ntawm cov ntaub thaiv npog oxide txheej, ua rau luv luv ntawm cov cheeb tsam uas nyob ib sab.
Tsuas yog qee qhov kev siv tshwj xeeb (xws li lub sijhawm ntev diffusion los tsim cov cheeb tsam uas muaj hluav taws xob sib txawv), cov txheej txheem diffusion tau maj mam hloov los ntawm ion implantation.
Txawm li cas los xij, hauv cov thev naus laus zis hauv qab 10nm, txij li qhov loj ntawm Fin nyob rau hauv peb-dimensional fin field-effect transistor (FinFET) ntaus ntawv me me, ion implantation yuav ua rau nws cov qauv me me. Kev siv cov txheej txheem diffusion tuaj yeem daws qhov teeb meem no.
2.3 Cov txheej txheem degradation
Cov txheej txheem annealing tseem hu ua thermal annealing. Cov txheej txheem yog tso cov silicon wafer nyob rau hauv ib qho chaw kub kub rau ib lub sij hawm ntawm lub sij hawm los hloov cov microstructure ntawm qhov chaw los yog sab hauv ntawm silicon wafer kom ua tiav cov txheej txheem tshwj xeeb.
Qhov tseem ceeb tshaj plaws ntawm cov txheej txheem annealing yog kub thiab sijhawm. Qhov kub thiab txias thiab lub sij hawm ntev dua, cov nyiaj thermal ntau dua.
Nyob rau hauv qhov tseeb integrated circuit manufacturing txheej txheem, thermal pob nyiaj siv yog nruj me ntsis tswj. Yog tias muaj ntau yam txheej txheem annealing hauv cov txheej txheem ntws, cov peev nyiaj thermal tuaj yeem qhia tau tias yog qhov superposition ntawm ntau yam kev kho cua sov.
Txawm li cas los xij, nrog rau cov txheej txheem miniaturization ntawm cov txheej txheem, cov nyiaj siv hluav taws xob tso cai rau tag nrho cov txheej txheem ua me dua thiab me dua, uas yog, qhov kub ntawm cov txheej txheem thermal thermal yuav qis dua thiab lub sijhawm luv dua.
Feem ntau, cov txheej txheem annealing yog ua ke nrog ion implantation, nyias zaj duab xis deposition, hlau silicide tsim thiab lwm yam txheej txheem. Feem ntau yog thermal annealing tom qab ion implantation.
Ion implantation yuav cuam tshuam rau lub substrate atoms, ua rau lawv tawg tawm ntawm tus thawj lattice qauv thiab puas lub substrate lattice. Thermal annealing tuaj yeem kho cov lattice kev puas tsuaj los ntawm ion implantation thiab tseem tuaj yeem txav cov implanted impurity atoms los ntawm cov kab lattice mus rau qhov chaw lattice, yog li ua rau lawv.
Qhov kub xav tau rau kev kho cov lattice puas yog li 500 ° C, thiab qhov kub xav tau rau kev ua kom impurity yog li 950 ° C. Nyob rau hauv txoj kev xav, lub sij hawm annealing ntev dua thiab qhov kub thiab txias dua, qhov kev ua kom zoo ntawm impurities ntau dua, tab sis siab dhau ntawm cov nyiaj siv hluav taws xob yuav ua rau muaj kev cuam tshuam ntau dhau ntawm impurities, ua rau cov txheej txheem tsis tuaj yeem tswj tau thiab thaum kawg ua rau degradation ntawm cov cuab yeej thiab kev ua haujlwm hauv Circuit Court.
Yog li ntawd, nrog rau kev tsim cov thev naus laus zis tsim khoom, cov khoom siv hluav taws xob ntev ntev tau maj mam hloov los ntawm cov thermal annealing ceev ceev (RTA).
Hauv kev tsim cov txheej txheem, qee cov yeeb yaj kiab tshwj xeeb yuav tsum tau ua cov txheej txheem thermal annealing tom qab tso tawm kom hloov qee yam ntawm lub cev lossis tshuaj lom neeg ntawm cov yeeb yaj kiab. Piv txwv li, ib tug xoob zaj duab xis ua ntom, hloov nws qhuav los yog ntub etching tus nqi;
Lwm cov txheej txheem annealing feem ntau tshwm sim thaum tsim cov hlau silicide. Cov yeeb yaj kiab hlau xws li cobalt, npib tsib xee, titanium, thiab lwm yam yog sputtered rau saum npoo ntawm silicon wafer, thiab tom qab thermal annealing ceev ceev ntawm qhov kub thiab txias, cov hlau thiab silicon tuaj yeem tsim cov hlau.
Qee cov hlau tsim cov txheej txheem sib txawv ntawm qhov sib txawv ntawm qhov kub thiab txias. Feem ntau, nws cia siab tias yuav tsim cov theem alloy nrog qis kev tiv thaiv thiab lub cev tsis kam thaum lub sijhawm ua haujlwm.
Raws li cov txheej txheem thermal sib txawv, cov txheej txheem annealing tau muab faib ua qhov kub thiab txias qhov cub annealing thiab ceev thermal annealing.
- Kub kub rauv tube annealing:
Nws yog ib txwm annealing txoj kev nrog kub kub, ntev annealing lub sij hawm thiab siab peev nyiaj.
Hauv qee cov txheej txheem tshwj xeeb, xws li oxygen txhaj tshuaj cais tshuab rau kev npaj SOI substrates thiab cov txheej txheem sib sib zog nqus zoo, nws tau siv dav. Cov txheej txheem zoo li no feem ntau xav tau cov peev nyiaj thermal ntau dua kom tau txais cov lattice zoo tag nrho lossis cov khoom tsis zoo ntawm cov khoom faib.
- Rapid Thermal Annealing:
Nws yog cov txheej txheem ntawm kev ua silicon wafers los ntawm cua sov / cua txias thiab lub tsev luv luv ntawm lub hom phiaj kub, qee zaum kuj hu ua Rapid Thermal Processing (RTP).
Nyob rau hauv tus txheej txheem ntawm kev tsim ultra-ntim junctions, ceev thermal annealing ua tiav kev sib haum xeeb ntawm kev kho cov lattice defect, impurity activation, thiab minimization ntawm impurity diffusion, thiab yog indispensable nyob rau hauv cov txheej txheem ntawm advanced technology nodes.
Qhov kub nce / caij nplooj zeeg txheej txheem thiab lub sij hawm luv luv ntawm lub hom phiaj kub ua ke tsim cov peev nyiaj thermal ntawm thermal annealing ceev.
Cov tsoos ceev thermal annealing muaj qhov kub ntawm li 1000 ° C thiab siv sijhawm vib nas this. Nyob rau hauv xyoo tas los no, cov kev xav tau rau kev ceev thermal annealing tau dhau los ua nruj, thiab flash annealing, spike annealing, thiab laser annealing tau maj mam tsim, nrog rau lub sij hawm annealing mus txog milliseconds, thiab txawm tending mus rau microseconds thiab sub-microseconds.
3. Peb cov khoom siv cua sov txheej txheem
3.1 Diffusion thiab oxidation khoom
Cov txheej txheem diffusion tsuas yog siv lub hauv paus ntsiab lus ntawm thermal diffusion nyob rau hauv qhov kub thiab txias (feem ntau 900-1200 ℃) cov xwm txheej los koom nrog cov ntsiab lus impurity rau hauv silicon substrate ntawm qhov tob uas yuav tsum tau muab rau nws qhov tshwj xeeb kev faib tawm, txhawm rau hloov cov khoom hluav taws xob ntawm cov khoom siv hluav taws xob. cov khoom siv thiab tsim cov khoom siv semiconductor.
Nyob rau hauv silicon integrated circuit technology, diffusion txheej txheem yog siv los ua PN junctions los yog cov khoom xws li resistors, capacitors, interconnect thaiv, diodes thiab transistors nyob rau hauv integrated circuits, thiab kuj yog siv rau kev sib cais ntawm cov khoom.
Vim tsis muaj peev xwm tswj tau qhov kev faib tawm ntawm doping concentration, cov txheej txheem diffusion tau maj mam hloov los ntawm ion implantation doping txheej txheem hauv kev tsim cov kev sib txuas nrog wafer diameters ntawm 200 mm thiab saum toj no, tab sis ib qho me me tseem siv rau hauv hnyav. cov txheej txheem doping.
Cov khoom siv niaj hnub diffusion yog cov kab rov tav diffusion furnaces, thiab tseem muaj qee qhov me me ntawm ntsug diffusion furnaces.
Kab rov tav diffusion rauv:
Nws yog cov khoom siv kho cua sov uas siv dav hauv cov txheej txheem diffusion ntawm kev sib xyaw ua ke nrog wafer txoj kab uas hla tsawg dua 200mm. Nws cov yam ntxwv yog hais tias lub cua sov rauv lub cev, cov tshuaj tiv thaiv raj thiab quartz nkoj nqa wafers yog tag nrho cov muab tso rau horizontally, yog li nws muaj cov txheej txheem ntawm zoo uniformity ntawm wafers.
Nws tsis yog tsuas yog ib qho tseem ceeb ntawm cov khoom siv hauv pem hauv ntej kawg ntawm cov kab hluav taws xob sib xyaw ua ke, tab sis kuj tau siv dav hauv diffusion, oxidation, annealing, alloying thiab lwm yam txheej txheem hauv kev lag luam xws li cov khoom siv sib cais, cov khoom siv hluav taws xob hluav taws xob, cov khoom siv hluav taws xob optoelectronic thiab optical fibers. .
Vertical diffusion rauv:
Feem ntau yog hais txog cov khoom siv kho cua sov batch siv nyob rau hauv cov txheej txheem sib xyaw ua ke rau wafers nrog txoj kab uas hla ntawm 200mm thiab 300mm, feem ntau hu ua lub tshuab hluav taws xob ntsug.
Cov yam ntxwv ntawm cov ntsug diffusion rauv yog qhov cua sov lub cev, cov tshuaj tiv thaiv raj thiab lub nkoj quartz nqa lub wafer yog tag nrho cov muab tso rau vertically, thiab wafer yog muab tso rau kab rov tav. Nws muaj cov yam ntxwv zoo sib xws hauv cov wafer, qib siab ntawm automation, thiab kev ua haujlwm ruaj khov, uas tuaj yeem ua tau raws li cov kev xav tau ntawm cov kab loj loj sib xyaw ua ke.
Qhov ntsug diffusion rauv yog ib qho ntawm cov khoom siv tseem ceeb hauv cov khoom siv hluav taws xob semiconductor integrated circuit ntau lawm thiab kuj yog siv rau hauv cov txheej txheem muaj feem xyuam hauv cov khoom siv hluav taws xob hluav taws xob (IGBT) thiab lwm yam.
Lub tshuab hluav taws xob ntsug yog siv tau rau cov txheej txheem oxidation xws li cov pa qhuav oxidation, hydrogen-oxygen synthesis oxidation, silicon oxynitride oxidation, thiab nyias zaj duab xis loj hlob txheej txheem xws li silicon dioxide, polysilicon, silicon nitride (Si3N4), thiab atomic txheej deposition.
Nws kuj yog feem ntau siv nyob rau hauv kub annealing, tooj liab annealing thiab alloying txheej txheem. Nyob rau hauv cov nqe lus ntawm diffusion txheej txheem, ntsug diffusion furnaces yog tej zaum kuj siv nyob rau hauv hnyav doping txheej txheem.
3.2 Cov khoom siv ceev ceev annealing
Rapid Thermal Processing (RTP) cov cuab yeej yog ib qho khoom siv hluav taws xob kho cua sov uas tuaj yeem nce qhov kub thiab txias ntawm wafer mus rau qhov kub uas yuav tsum tau ua los ntawm cov txheej txheem (200-1300 ° C) thiab tuaj yeem ua kom txias sai. Qhov cua sov / cua txias feem ntau yog 20-250 ° C / s.
Ntxiv rau qhov ntau ntawm cov khoom siv hluav taws xob thiab lub sijhawm annealing, RTP cov cuab yeej tseem muaj lwm cov txheej txheem kev ua tau zoo, xws li kev tswj xyuas nyiaj txiag zoo heev thiab zoo dua qhov sib xws (tshwj xeeb tshaj yog rau cov wafers loj), kho wafer puas tsuaj los ntawm ion implantation, thiab ntau chav tuaj yeem khiav cov txheej txheem sib txawv ib txhij.
Tsis tas li ntawd, cov cuab yeej RTP tuaj yeem hloov pauv thiab hloov pauv sai sai thiab kho cov txheej txheem gases, kom ntau cov txheej txheem kho cua sov tuaj yeem ua tiav hauv tib txoj kev kho cua sov.
Cov cuab yeej siv RTP feem ntau yog siv rau hauv kev ceev thermal annealing (RTA). Tom qab ion implantation, RTP cov cuab yeej yuav tsum tau kho qhov kev puas tsuaj los ntawm ion implantation, qhib doped protons thiab zoo inhibit impurity diffusion.
Feem ntau hais lus, qhov ntsuas kub rau kev kho cov lattice tsis xws luag yog li 500 ° C, thaum 950 ° C yog xav tau rau kev ua kom cov doped atoms. Kev ua kom cov impurities muaj feem xyuam rau lub sijhawm thiab qhov kub thiab txias. Lub sij hawm ntev thiab qhov kub thiab txias, qhov siab dua cov impurities tau qhib, tab sis nws tsis yog qhov tsim nyog rau inhibiting qhov diffusion ntawm impurities.
Vim tias cov cuab yeej RTP muaj cov yam ntxwv ntawm qhov kub thiab txias nce / caij nplooj zeeg thiab lub sijhawm luv, cov txheej txheem annealing tom qab ion implantation tuaj yeem ua tiav qhov kev xaiv zoo tshaj plaws ntawm cov lattice defect kho, impurity activation thiab impurity diffusion inhibition.
RTA feem ntau muab faib ua plaub pawg hauv qab no:
(1)Spike Annealing
Nws cov yam ntxwv yog tias nws tsom mus rau cov txheej txheem cua sov / txias sai, tab sis qhov pib tsis muaj txheej txheem txuag hluav taws xob. Lub spike annealing nyob ntawm qhov kub siab rau lub sijhawm luv luv, thiab nws lub luag haujlwm tseem ceeb yog txhawm rau qhib cov ntsiab lus doping.
Hauv kev siv tiag tiag, lub wafer pib ua kom sov sai sai los ntawm qhov chaw ruaj khov ntawm qhov kub thiab txias tam sim ntawd tom qab ncav cuag lub hom phiaj kub taw tes.
Txij li thaum lub sij hawm txij nkawm ntawm lub hom phiaj kub taw tes (piv txwv li, lub ncov kub taw tes) yog luv heev, lub annealing txheej txheem yuav maximize lub impurity activation thiab txo cov degree ntawm impurity diffusion, thaum muaj zoo tsis xws luag annealing kho cov yam ntxwv, ua rau ntau dua. kev sib txuas zoo thiab qis dua tam sim no.
Spike annealing yog dav siv nyob rau hauv ultra-dub hlws ris txheej txheem tom qab 65nm. Cov txheej txheem tsis sib xws ntawm kev sib tsoo annealing feem ntau suav nrog qhov kub siab tshaj plaws, lub sijhawm pw tsaug zog, qhov kub thiab txias thiab wafer tsis kam tom qab txheej txheem.
Qhov luv luv lub sijhawm nyob hauv siab, qhov zoo dua. Nws feem ntau yog nyob ntawm qhov cua sov / cua txias ntawm qhov ntsuas kub, tab sis cov txheej txheem xaiv roj cua qee zaum kuj muaj qee yam cuam tshuam rau nws.
Piv txwv li, helium muaj me me atomic ntim thiab ceev ceev diffusion tus nqi, uas yog conducive rau sai thiab uniform kub hloov thiab yuav txo tau lub ncov dav los yog ncov lub sij hawm nyob. Yog li ntawd, qee zaum helium raug xaiv los pab cua sov thiab cua txias.
(2)Teeb Annealing
Lub teeb annealing tshuab yog dav siv. Halogen teeb feem ntau yog siv los ua cov cua kub ceev ceev. Lawv cov cua sov / cua txias siab thiab tswj qhov kub thiab txias tuaj yeem ua tau raws li qhov yuav tsum tau ua ntawm cov txheej txheem tsim khoom siab tshaj 65nm.
Txawm li cas los xij, nws tsis tuaj yeem ua tau raws li qhov yuav tsum tau ua ntawm 45nm txheej txheem (tom qab 45nm txheej txheem, thaum lub nickel-silicon tiv tauj ntawm cov logic LSI tshwm sim, lub wafer yuav tsum tau kub ceev los ntawm 200 ° C mus tshaj 1000 ° C nyob rau hauv milliseconds, yog li laser annealing feem ntau yuav tsum tau).
(3)Laser Annealing
Laser annealing yog cov txheej txheem ncaj qha siv laser kom ceev qhov kub ntawm qhov saum npoo ntawm lub wafer kom txog thaum nws txaus los yaj cov silicon siv lead ua, ua rau nws ua haujlwm heev.
Qhov zoo ntawm laser annealing yog cov cua kub ceev heev thiab rhiab tswj. Nws tsis xav tau cov cua sov filament thiab yeej tsis muaj teeb meem nrog kub lag thiab lub neej filament.
Txawm li cas los xij, los ntawm kev pom zoo, laser annealing muaj cov teeb meem tam sim no thiab qhov seem seem, uas yuav muaj qee yam cuam tshuam rau kev ua haujlwm ntawm cov cuab yeej.
(4)Flash Annealing
Flash annealing yog annealing thev naus laus zis uas siv cov hluav taws xob siv hluav taws xob ntau los ua qhov sib sib zog nqus annealing ntawm wafers ntawm qhov tshwj xeeb preheat kub.
Lub wafer yog preheated rau 600-800 ° C, thiab tom qab ntawd high-siv hluav taws xob yog siv rau lub sij hawm luv luv pulse irradiation. Thaum lub ncov kub ntawm lub wafer mus txog qhov yuav tsum tau annealing kub, lub tawg tam sim ntawd tua.
RTP cov cuab yeej siv tau nce ntxiv hauv kev tsim hluav taws xob sib xyaw ua ke.
Ntxiv rau kev siv dav hauv RTA cov txheej txheem, RTP cov cuab yeej kuj tau pib siv hauv thermal oxidation sai, thermal nitridation sai, thermal diffusion sai, tshuaj vapor deposition sai, nrog rau cov hlau silicide tiam thiab cov txheej txheem epitaxial.
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Semicera tuaj yeem muab taugraphite qhov chaw,soft/rigid xav,silicon carbide qhov chaw,CVD silicon carbide qhov chaw, thiabSiC/TaC coated qhov chawnrog tag nrho cov txheej txheem semiconductor hauv 30 hnub.
Yog tias koj txaus siab rau cov khoom lag luam semiconductor saum toj no,thov tsis txhob yig tiv tauj peb thawj zaug.
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Post lub sij hawm: Aug-27-2024