Semiconductor npaj kom tsim cov khoom tseem ceeb rau semiconductor manufacturing khoom thoob ntiaj teb. Los ntawm 2027, peb lub hom phiaj los tsim ib lub Hoobkas tshiab 20,000 square meter nrog tag nrho cov peev ntawm 70 lab USD. Ib qho ntawm peb cov khoom tseem ceeb, lubsilicon carbide (SiC) wafer cab kuj, tseem hu ua susceptor, tau pom kev nce qib tseem ceeb. Yog li, dab tsi yog qhov no tais uas tuav cov wafers?
Hauv cov txheej txheem tsim khoom wafer, cov txheej txheem epitaxial yog tsim los ntawm qee qhov wafer substrates los tsim cov khoom siv. Piv txwv li, GaAs epitaxial khaubncaws sab nraud povtseg yog npaj rau silicon substrates rau LED li, SiC epitaxial khaubncaws sab nraud povtseg yog zus nyob rau hauv conductive SiC substrates rau lub hwj chim daim ntaub ntawv xws li SBDs thiab MOSFETs, thiab GaN epitaxial txheej yog tsim los ntawm semi-insulating SiC substrates rau RF daim ntaub ntawv xws li HEMTs. . Cov txheej txheem no hnyav heev rau ntawmTshuaj vapor deposition (CVD)khoom siv.
Hauv cov khoom siv CVD, cov substrates tsis tuaj yeem muab tso ncaj qha rau ntawm cov hlau lossis lub hauv paus yooj yim rau epitaxial deposition vim muaj ntau yam xws li roj ntws (kab rov tav, ntsug), qhov kub, siab, ruaj khov, thiab kev sib kis. Yog li ntawd, ib tug susceptor yog siv los tso lub substrate rau, enabling epitaxial deposition siv CVD technology. Tus susceptor no yog tusSiC-coated graphite susceptor.
SiC-coated graphite susceptors Feem ntau yog siv hauv Hlau-Organic Chemical Vapor Deposition (MOCVD) cov cuab yeej los txhawb thiab ua kom sov ib leeg-crystal substrates. Lub thermal stability thiab uniformity ntawm SiC-coated graphite susceptorsNws yog ib qho tseem ceeb rau kev loj hlob zoo ntawm cov ntaub ntawv epitaxial, ua rau lawv cov khoom tseem ceeb ntawm MOCVD cov cuab yeej (cov tuam txhab MOCVD cov cuab yeej xws li Veeco thiab Aixtron). Tam sim no, MOCVD thev naus laus zis tau siv dav hauv kev loj hlob epitaxial ntawm GaN zaj duab xis rau xiav LEDs vim nws qhov yooj yim, tswj tau qhov loj hlob, thiab siab purity. Raws li ib feem tseem ceeb ntawm MOCVD reactor, lubsusceptor rau GaN zaj duab xis epitaxial loj hlobyuav tsum muaj qhov kub thiab txias tsis kam, tsis zoo thermal conductivity, tshuaj stability, thiab muaj zog thermal shock kuj. Graphite ua tau raws li cov kev cai no zoo kawg nkaus.
Raws li cov khoom tseem ceeb ntawm MOCVD cov cuab yeej, cov graphite susceptor txhawb nqa thiab ua kom sov ib leeg-crystal substrates, cuam tshuam ncaj qha rau cov uniformity thiab purity ntawm cov ntaub ntawv zaj duab xis. Nws qhov zoo cuam tshuam ncaj qha rau kev npaj ntawm epitaxial wafers. Txawm li cas los xij, nrog kev siv ntau ntxiv thiab kev ua haujlwm sib txawv, graphite susceptors tau yooj yim hnav thiab suav tias yog khoom siv.
MOCVD susceptorsyuav tsum muaj qee yam txheej txheem txheej kom tau raws li cov hauv qab no:
- -Cov kev pab zoo:Cov txheej yuav tsum tau npog tag nrho cov graphite susceptor nrog siab ceev kom tiv thaiv corrosion nyob rau hauv ib tug corrosive gas ib puag ncig.
- -High bonding zog:Cov txheej yuav tsum tau sib zog ua kom muaj zog rau cov graphite susceptor, tiv taus ntau qhov kub thiab txias mus rau qhov tsis muaj tev tawm.
- - Tshuaj stability:Cov txheej yuav tsum muaj tshuaj lom neeg ruaj khov kom tsis txhob ua tsis tiav nyob rau hauv qhov kub thiab txias thiab corrosive cua.
SiC, nrog nws cov corrosion kuj, siab thermal conductivity, thermal shock kuj, thiab siab tshuaj stability, ua tau zoo nyob rau hauv lub GaN epitaxial ib puag ncig. Tsis tas li ntawd, cov thermal expansion coefficient ntawm SiC zoo ib yam li graphite, ua SiC yog cov khoom siv rau graphite susceptor coatings.
Tam sim no, ntau hom SiC suav nrog 3C, 4H, thiab 6H, txhua qhov tsim nyog rau kev siv sib txawv. Piv txwv li, 4H-SiC tuaj yeem tsim cov khoom siv hluav taws xob siab, 6H-SiC ruaj khov thiab siv rau optoelectronic li, thaum 3C-SiC zoo ib yam hauv cov qauv rau GaN, ua rau nws haum rau GaN epitaxial txheej ntau lawm thiab SiC-GaN RF li. 3C-SiC, tseem hu ua β-SiC, feem ntau yog siv los ua zaj duab xis thiab txheej txheej, ua rau nws yog cov khoom tseem ceeb rau txheej txheej.
Muaj ntau txoj hauv kev los npajSiC coatings, suav nrog sol-gel, embedding, txhuam, plasma spraying, tshuaj vapor reaction (CVR), thiab tshuaj vapor deposition (CVD).
Ntawm cov no, txoj kev embedding yog cov txheej txheem kub-kub-theem sintering. Los ntawm muab cov graphite substrate rau hauv cov hmoov embedding uas muaj Si thiab C hmoov thiab sintering nyob rau hauv ib qho inert gas ib puag ncig, ib tug SiC txheej txheej ntawm graphite substrate. Txoj kev no yog qhov yooj yim, thiab cov txheej txheem sib txuas zoo nrog lub substrate. Txawm li cas los xij, cov txheej tsis muaj thickness uniformity thiab tej zaum yuav muaj pores, ua rau tsis zoo oxidation kuj.
Txheej Txheej Txheej
Txoj kev tshuaj tsuag txheej muaj xws li txau cov ntaub ntawv raw rau ntawm graphite substrate nto thiab kho lawv ntawm qhov kub thiab txias los tsim ib txheej. Txoj kev no yog qhov yooj yim thiab siv tau zoo tab sis ua rau muaj kev sib txuas tsis muaj zog ntawm cov txheej txheem thiab cov txheej txheem substrate, cov txheej txheem tsis zoo, thiab cov txheej nyias nyias uas tsis muaj oxidation tsis kam, yuav tsum muaj cov txheej txheem pabcuam.
Ion Beam Spraying Method
Ion beam txau siv rab phom ion beam los txau cov khoom molten los yog ib nrab molten rau ntawm graphite substrate nto, ua ib txheej thaum solidification. Txoj kev no yog qhov yooj yim thiab tsim cov txheej txheem SiC tuab. Txawm li cas los xij, cov txheej nyias nyias muaj qhov tsis muaj zog oxidation, feem ntau siv rau SiC composite coatings los txhim kho qhov zoo.
Txoj kev Sol-Gel
Cov txheej txheem sol-gel suav nrog kev npaj cov txheej txheem, pob tshab sol tov, npog lub substrate nto, thiab tau txais cov txheej tom qab ziab thiab sintering. Txoj kev no yog qhov yooj yim thiab raug nqi tab sis ua rau cov coatings uas tsis tshua muaj thermal poob siab thiab raug cuam tshuam rau kev tawg, txwv nws cov ntawv thov dav.
Chemical Vapor Reaction (CVR)
CVR siv Si thiab SiO2 hmoov ntawm qhov kub thiab txias los tsim SiO vapor, uas cuam tshuam nrog cov khoom siv carbon substrate los ua SiC txheej. Qhov tshwm sim SiC txheej daim ntawv cog lus nruj nrog substrate, tab sis cov txheej txheem yuav tsum muaj qhov kub thiab txias thiab cov nqi.
Chemical Vapor Deposition (CVD)
CVD yog thawj txheej txheem los npaj SiC txheej. Nws suav nrog cov roj-theem cov tshuaj tiv thaiv ntawm graphite substrate nto, qhov twg cov ntaub ntawv raw tau txais kev cuam tshuam lub cev thiab tshuaj lom neeg, tso ua SiC txheej. CVD ua kom nruj sib koom ua ke SiC txheej uas txhim khu lub substrate oxidation thiab ablation kuj. Txawm li cas los xij, CVD muaj lub sijhawm tso tawm ntev thiab tuaj yeem cuam tshuam cov pa roj carbon monoxide.
Kev ua lag luam
Hauv SiC-coated graphite susceptor kev ua lag luam, cov tuam txhab txawv teb chaws muaj cov hlau lead thiab cov khoom lag luam siab. Semicera tau kov yeej cov thev naus laus zis tseem ceeb rau SiC txheej txheej loj hlob ntawm graphite substrates, muab cov kev daws teeb meem uas hais txog thermal conductivity, elastic modulus, nruj, lattice defects, thiab lwm yam teeb meem zoo, ua tau raws li MOCVD cov khoom yuav tsum tau ua.
Yav tom ntej Outlook
Tuam Tshoj txoj kev lag luam semiconductor tab tom txhim kho sai, nrog kev nce hauv cheeb tsam ntawm MOCVD cov khoom siv epitaxial thiab nthuav dav daim ntawv thov. SiC-coated graphite susceptor lag luam yuav tsum loj hlob sai.
Xaus
Raws li cov khoom tseem ceeb hauv cov khoom siv semiconductor, kev paub txog cov thev naus laus zis ntau lawm thiab hauv zos SiC-coated graphite susceptors yog qhov tseem ceeb rau Tuam Tshoj txoj kev lag luam semiconductor. Lub teb chaws SiC-coated graphite susceptor teb yog thriving, nrog cov khoom zoo mus txog thoob ntiaj teb.Semiceratab tom siv zog los ua tus xa khoom loj hauv daim teb no.
Post lub sij hawm: Lub Xya hli ntuj-17-2024