Epitaxial kev loj hlob yog ib qho kev siv tshuab uas loj hlob ib leeg siv lead ua txheej rau ntawm ib qho siv lead ua substrate (substrate) nrog tib lub siv lead ua orientation raws li lub substrate, zoo li lub pob zeb qub tau nthuav tawm sab nraud. Cov txheej txheem tshiab no tuaj yeem sib txawv ntawm cov substrate nyob rau hauv cov nqe lus ntawm conductivity hom, resistivity, thiab lwm yam, thiab tuaj yeem loj hlob ntau txheej ib leeg nrog cov thicknesses sib txawv thiab cov kev xav tau sib txawv, yog li txhim kho qhov yooj yim ntawm cov cuab yeej tsim thiab kev ua haujlwm ntawm cov cuab yeej. Tsis tas li ntawd, cov txheej txheem epitaxial kuj tau siv dav hauv PN hlws ris kev rho tawm thev naus laus zis hauv kev sib koom ua ke thiab txhim kho cov khoom zoo hauv cov txheej txheem loj sib xyaw.
Kev faib tawm ntawm epitaxy feem ntau yog nyob ntawm cov tshuaj sib txawv ntawm cov txheej txheem substrate thiab epitaxial thiab cov txheej txheem kev loj hlob sib txawv.
Raws li cov tshuaj sib txawv, kev loj hlob ntawm epitaxial tuaj yeem muab faib ua ob hom:
1. Homoepitaxial: Nyob rau hauv cov ntaub ntawv no, lub epitaxial txheej muaj tib yam tshuaj muaj pes tsawg leeg ntawm substrate. Piv txwv li, silicon epitaxial txheej yog zus ncaj qha rau ntawm silicon substrates.
2. Heteroepitaxy: Ntawm no, cov tshuaj muaj pes tsawg leeg ntawm cov txheej epitaxial txawv ntawm cov substrate. Piv txwv li, ib txheej gallium nitride epitaxial yog zus rau ntawm sapphire substrate.
Raws li kev loj hlob sib txawv, kev siv tshuab epitaxial tuaj yeem muab faib ua ntau hom:
1. Molecular beam epitaxy (MBE): Qhov no yog ib qho cuab yeej rau kev loj hlob ib leeg siv lead ua nyias zaj duab xis ntawm ib qho siv lead ua substrates, uas yog ua tiav los ntawm kev tswj cov beam molecular flow rate thiab beam density hauv ultra-high nqus.
2. Hlau-organic chemical vapor deposition (MOCVD): Lub tshuab no siv cov hlau-organic compounds thiab roj-theem reagents los ua cov tshuaj tiv thaiv ntawm qhov kub thiab txias los tsim cov ntaub ntawv nyias nyias. Nws muaj kev siv dav hauv kev npaj cov khoom siv semiconductor thiab cov khoom siv.
3. Ua kua theem epitaxy (LPE): Los ntawm kev ntxiv cov khoom ua kua rau hauv ib qho siv lead ua substrate thiab ua kev kho cua sov ntawm qhov kub thiab txias, cov khoom siv ua kua crystallizes los ua ib zaj duab xis siv lead ua. Cov yeeb yaj kiab uas npaj los ntawm cov thev naus laus zis no yog lattice-matched rau substrate thiab feem ntau siv los npaj cov khoom siv semiconductor thiab cov khoom siv sib xyaw.
4. Vapor theem epitaxy (VPE): Siv cov roj reactants los ua cov tshuaj tiv thaiv ntawm qhov kub thiab txias los tsim cov ntaub ntawv nyias nyias. Cov cuab yeej no yog tsim rau kev npaj cov cheeb tsam loj, zoo ib leeg siv lead ua zaj duab xis, thiab tshwj xeeb tshaj yog nyob rau hauv kev npaj ntawm compound semiconductor cov ntaub ntawv thiab cov khoom siv.
5. Chemical beam epitaxy (CBE): Lub tshuab no siv cov kab hluav taws xob tshuaj los loj hlob ib leeg siv lead ua zaj duab xis ntawm ib qho siv lead ua substrates, uas yog ua tiav los ntawm kev tswj cov tshuaj beam txaus tus nqi thiab beam ceev. Nws muaj kev siv dav hauv kev npaj cov khoom siv zoo ib leeg siv lead ua nyias zaj duab xis.
6. Atomic txheej epitaxy (ALE): Siv atomic txheej deposition technology, cov ntaub ntawv nyias nyias yuav tsum tau muab tso rau txheej txheej ntawm ib qho siv lead ua substrate. Cov thev naus laus zis no tuaj yeem npaj cov cheeb tsam loj, zoo ib leeg siv lead ua zaj duab xis thiab feem ntau siv los npaj cov khoom siv semiconductor thiab cov khoom siv sib xyaw.
7. Kub phab ntsa epitaxy (HWE): Los ntawm cov cua kub kub, gaseous reactants tau tso rau ntawm ib qho siv lead ua substrate los tsim ib zaj duab xis siv lead ua. Cov thev naus laus zis no kuj tseem tsim nyog rau kev npaj cov cheeb tsam loj, zoo ib leeg siv lead ua zaj duab xis, thiab tshwj xeeb tshaj yog siv hauv kev npaj cov khoom siv semiconductor thiab cov khoom siv.
Post lub sij hawm: May-06-2024