Semicera cov10x10mm Nonpolar M-plane Aluminium Substrateyog tsim los kom ua tau raws li qhov yuav tsum tau ua ntawm kev siv optoelectronic siab heev. Qhov no substrate nta ib tug nonpolar M-dav hlau orientation, uas yog ib qho tseem ceeb rau txo polarization teebmeem nyob rau hauv cov khoom xws li LEDs thiab laser diodes, ua rau txhim khu kev qha thiab efficiency.
Cov10x10mm Nonpolar M-plane Aluminium Substrateyog crafted nrog tshwj xeeb crystalline zoo, kom ntseeg tau qhov tsawg kawg nkaus tsis xws luag thiab superior structural kev ncaj ncees. Qhov no ua rau nws yog qhov kev xaiv zoo tshaj plaws rau kev loj hlob epitaxial ntawm cov yeeb yaj kiab zoo III-nitride, uas yog qhov tseem ceeb rau kev txhim kho cov khoom siv optoelectronic tom ntej.
Semicera's precision engineering xyuas kom txhua tus10x10mm Nonpolar M-plane Aluminium Substratemuaj cov thickness zoo ib yam thiab nto flatness, uas yog ib qho tseem ceeb rau cov yeeb yaj kiab tsis sib xws thiab kev tsim khoom siv. Tsis tas li ntawd, lub substrate lub compact loj ua rau nws haum rau ob qho tib si kev tshawb fawb thiab ntau lawm ib puag ncig, cia rau saj zawg zog siv nyob rau hauv ntau yam kev siv. Nrog nws zoo heev thermal thiab tshuaj stability, no substrate muab ib tug txhim khu kev qha lub hauv paus rau txoj kev loj hlob ntawm txiav-ntug optoelectronic technologies.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
