Kev Pabcuam Ntev SiC Coated Graphite Carrier Rau Hnub Ci Wafer

Lus piav qhia luv luv:

Silicon carbide yog hom tshiab ntawm ceramics nrog cov nqi siab thiab cov khoom siv zoo heev.Vim muaj cov yam ntxwv zoo li lub zog siab thiab hardness, kub tsis kam, thermal conductivity thiab tshuaj corrosion kuj, Silicon Carbide yuav luag txhua yam tshuaj nruab nrab.Yog li ntawd, SiC tau siv dav hauv kev lag luam roj, tshuaj lom neeg, tshuab thiab airspace, txawm tias lub zog nuclear thiab cov tub rog muaj lawv qhov tshwj xeeb xav tau ntawm SIC.Qee daim ntawv thov ib txwm peb tuaj yeem muab yog lub nplhaib foob rau lub twj tso kua mis, lub valve thiab cov cuab yeej tiv thaiv thiab lwm yam.

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Product Detail

Khoom cim npe

Qhov zoo

Kub kub oxidation tsis kam
Zoo heev Corrosion kuj
Zoo Abrasion tsis kam
High coefficient ntawm tshav kub conductivity
Self-lubricity, tsawg ntom
Siab hardness
Customized tsim.

Daim ntawv thov

-Kev hnav-tiv taus teb: bushing, phaj, sandblasting nozzle, cyclone hauv ob sab phlu, sib tsoo chim, thiab lwm yam ...
-High Temperature: siC Slab, Quenching Rauv Tube, Radiant Tube, crucible, Cua sov Element, Roller, Beam, Thaum tshav kub kub Exchanger, Cua txias yeeb nkab, Burner Nozzle, Thermocouple Protection Tube, SiC nkoj, Kiln tsheb qauv, Setter, thiab lwm yam.
-Silicon Carbide Semiconductor: SiC wafer nkoj, sic chuck, sic paddle, sic cassette, sic diffusion raj, wafer diav rawg, suction phaj, guideway, thiab lwm yam.
-Silicon Carbide Foob Field: txhua yam sealing nplhaib, bearing, bushing, thiab lwm yam.
-Photovoltaic teb: Cantilever Paddle, Sib tsoo chim, Silicon Carbide Roller, thiab lwm yam.
- Lithium roj teeb teb

WAFER (1)

WAFER (2)

Physical Properties Of SiC

Khoom	Tus nqi	Txoj kev
Qhov ntom	3.21 g / cc	Sink-float thiab dimension
Tshwj xeeb kub	0.66 J / g ° K	Pulsed laser flash
Flexural zog	450 MPa 560 MPa	4 taw tes khoov, RT4 taw tes khoov, 1300 °
Fracture toughness	2.94 MPa m1/2	Microindentation
Hardness	2800	Vicker's, 500g load
Elastic ModulusYoung's Modulus	450 GPa 430 GPa	4 pt khoov, RT4 pt khoov, 1300 ° C
Cov qoob loo loj	2-10 µm	SEM

Thermal Properties ntawm SiC

Thermal conductivity	250 W / m ° K	Laser flash method, RT
Thermal Expansion (CTE)	4.5 x 10-6 ° K	Chav ntsuas kub txog 950 ° C, silica dilatometer

Technical Parameters

Yam khoom	Chav tsev	Cov ntaub ntawv
Yam khoom	Chav tsev	RBSiC (SiSiC)	NBSiC	SIB	RSiC	OSiC
SiC cov ntsiab lus	%	85	75	99	99.9 ua	≥99
Dawb silicon ntsiab lus	%	15	0	0	0	0
Max kev pab kub	℃	1380	1450	1650	1620	1400
Qhov ntom	g/cm³	3.02 Nws	2.75-2.85 Nws	3.08-3.16 Nws	2.65-2.75 Nws	2.75-2.85 Nws
Qhib porosity	%	0	13-15	0	15-18	7–8
Bending zog 20 ℃	Mpa	250	160	380	100	/
Bending zog 1200 ℃	Mpa	280	180	400	120	/
Modulus ntawm elasticity 20 ℃	Gpa	330	580	420	240	/
Modulus ntawm elasticity 1200 ℃	Gpa	300	/	/	200	/
Thermal conductivity 1200 ℃	W/mK	45	19.6 ib	100-120	36.6 ib	/
Coefficient ntawm thermal expansion	K^-1X 10^-6	4.5	4.7	4.1	4.69 ib	/
HV	Kg / m^m2	2115	/	2800	/	/

CVD silicon carbide txheej rau sab nrauv ntawm recrystallized silicon carbide ceramic khoom tuaj yeem ncav cuag qhov purity ntau dua 99.9999% kom tau raws li qhov xav tau ntawm cov neeg siv khoom hauv kev lag luam semiconductor.