Kev Pabcuam Ntev SiC Coated Graphite Carrier Rau Hnub Ci Wafer

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Silicon carbide yog hom tshiab ntawm ceramics nrog cov nqi siab thiab cov khoom siv zoo heev.Vim muaj cov yam ntxwv zoo li lub zog siab thiab hardness, kub tsis kam, thermal conductivity thiab tshuaj corrosion kuj, Silicon Carbide yuav luag txhua yam tshuaj nruab nrab.Yog li ntawd, SiC tau siv dav hauv cov roj mining, tshuaj lom neeg, tshuab thiab airspace, txawm tias lub zog nuclear thiab cov tub rog muaj lawv qhov tshwj xeeb xav tau ntawm SIC.Qee daim ntawv thov ib txwm peb tuaj yeem muab yog lub nplhaib foob rau lub twj tso kua mis, lub valve thiab cov cuab yeej tiv thaiv thiab lwm yam.


Product Detail

Khoom cim npe

Qhov zoo

Kub kub oxidation tsis kam
Zoo heev Corrosion kuj
Zoo Abrasion tsis kam
High coefficient ntawm tshav kub conductivity
Self-lubricity, tsawg ntom
Siab hardness
Customized tsim.

HGF (2)
HGF (1)

Daim ntawv thov

-Kev hnav-tiv taus teb: bushing, phaj, sandblasting nozzle, cyclone hauv ob sab phlu, sib tsoo chim, thiab lwm yam ...
-High Temperature: siC Slab, Quenching Rauv Tube, Radiant Tube, crucible, Cua sov Cheebtsam, Roller, Beam, Thaum tshav kub kub Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC nkoj, Kiln car Structure, Setter, thiab lwm yam.
-Silicon Carbide Semiconductor: SiC wafer nkoj, sic chuck, sic paddle, sic cassette, sic diffusion raj, wafer diav rawg, suction phaj, guideway, thiab lwm yam.
-Silicon Carbide Foob Field: txhua yam kev sib khi nplhaib, kabmob, bushing, thiab lwm yam.
-Photovoltaic teb: Cantilever Paddle, Sib tsoo chim, Silicon Carbide Roller, thiab lwm yam.
- Lithium roj teeb teb

WAFER (1)

WAFER (2)

Physical Properties Of SiC

Khoom Tus nqi Txoj kev
Qhov ntom 3.21 g / cc Sink-float thiab dimension
Tshwj xeeb kub 0.66 J / g ° K Pulsed laser flash
Flexural zog 450 MPa 560 MPa 4 taw tes khoov, RT4 taw tes khoov, 1300 °
Fracture toughness 2.94 MPa m1/2 Microindentation
Hardness 2800 Vicker's, 500g load
Elastic ModulusYoung's Modulus 450 GPa 430 GPa 4 pt khoov, RT4 pt khoov, 1300 ° C
Cov qoob loo loj 2-10 µm SEM

Thermal Properties ntawm SiC

Thermal conductivity 250 W / m ° K Laser flash method, RT
Thermal Expansion (CTE) 4.5 x 10-6 ° K Chav ntsuas kub txog 950 ° C, silica dilatometer

Technical Parameters

Yam khoom Chav tsev Cov ntaub ntawv
RBSiC (SiSiC) NBSiC SIB RSiC OSiC
SiC cov ntsiab lus % 85 75 99 99.9 ua ≥99
Dawb silicon ntsiab lus % 15 0 0 0 0
Max kev pab kub 1380 1450 1650 1620 1400
Qhov ntom g/cm3 3.02 Nws 2.75-2.85 Nws 3.08-3.16 Nws 2.65-2.75 Nws 2.75-2.85 Nws
Qhib porosity % 0 13-15 0 15-18 7–8
Bending zog 20 ℃ Mpa 250 160 380 100 /
Bending zog 1200 ℃ Mpa 280 180 400 120 /
Modulus ntawm elasticity 20 ℃ Gpa 330 580 420 240 /
Modulus ntawm elasticity 1200 ℃ Gpa 300 / / 200 /
Thermal conductivity 1200 ℃ W/mK 45 19.6 ib 100-120 36.6 ib /
Coefficient ntawm thermal expansion K-1X 10-6 4.5 4.7 4.1 4.69 ib /
HV Kg / mm2 2115 / 2800 / /

CVD silicon carbide txheej rau sab nrauv ntawm recrystallized silicon carbide ceramic khoom tuaj yeem ncav cuag qhov purity ntawm ntau dua 99.9999% kom tau raws li cov kev xav tau ntawm cov neeg siv khoom hauv kev lag luam semiconductor.

Duab

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