2 ~ 6 nti 4 ° tawm-lub kaum sab xis P-hom 4H-SiC substrate

Lus piav qhia luv luv:

4 ° off-angle P-hom 4H-SiC substrate yog ib yam khoom siv semiconductor, qhov "4 ° off-angle" yog hais txog lub ntsej muag siv lead ua ntawm lub wafer yog 4 degrees off-angle, thiab "P-hom" yog hais txog hom conductivity ntawm semiconductor. Cov khoom siv no muaj cov ntawv thov tseem ceeb hauv kev lag luam semiconductor, tshwj xeeb tshaj yog nyob rau hauv cov khoom siv hluav taws xob hluav taws xob thiab cov khoom siv hluav taws xob siab.


Product Detail

Khoom cim npe

Semicera's 2 ~ 6 nti 4 ° off-angle P-hom 4H-SiC substrates yog tsim los ua kom tau raws li qhov kev xav tau loj hlob ntawm lub zog ua haujlwm siab thiab RF ntaus ntawv manufacturers. Qhov kev taw qhia 4 ° tawm ntawm lub kaum sab xis kom ntseeg tau tias qhov kev loj hlob zoo ntawm epitaxial, ua rau lub substrate zoo tagnrho rau ntau yam khoom siv semiconductor, suav nrog MOSFETs, IGBTs, thiab diodes.

Qhov no 2 ~ 6 nti 4 ° tawm-lub kaum sab xis P-hom 4H-SiC substrate muaj cov khoom zoo heev, nrog rau cov thermal conductivity, kev ua tau zoo ntawm hluav taws xob, thiab kev ruaj ntseg zoo heev. Lub off-angle orientation pab txo micropipe ceev thiab txhawb nqa cov txheej txheem epitaxial smoother, uas yog qhov tseem ceeb rau kev txhim kho kev ua tau zoo thiab kev ntseeg siab ntawm cov khoom siv semiconductor kawg.

Semicera's 2 ~ 6 nti 4 ° tawm-lub kaum sab xis P-hom 4H-SiC substrates muaj nyob rau hauv ntau txoj kab uas hla, xws li 2 ntiv mus rau 6 ntiv tes, kom ua tau raws li kev tsim khoom sib txawv. Peb cov substrates tau raug tsim ua tiav los muab cov qib doping zoo ib yam thiab cov yam ntxwv zoo ntawm lub ntsej muag, kom ntseeg tau tias txhua lub wafer ua tau raws li cov lus qhia nruj uas yuav tsum tau ua rau kev siv hluav taws xob siab heev.

Semicera kev cog lus rau kev tsim kho tshiab thiab kev ua tau zoo ua kom peb cov 2 ~ 6 nti 4 ° off-angle P-hom 4H-SiC substrates xa cov kev ua tau zoo sib xws hauv ntau hom kev siv hluav taws xob hluav taws xob mus rau cov khoom siv ntau zaus. Cov khoom no muab cov kev daws teeb meem rau cov tiam tom ntej ntawm kev siv hluav taws xob, kev ua haujlwm siab semiconductors, txhawb kev nce qib hauv kev lag luam xws li automotive, telecommunications, thiab lub zog tauj dua tshiab.

Cov qauv hais txog qhov loj

Loj 2 nti 4 nti
Txoj kab uas hla 50.8 hli ± 0.38 hli 100.0mm + 0/-0.5 hli
Surface Orentation 4 ° rau <11-20> ± 0.5 ° 4 ° rau <11-20> ± 0.5 °
Qhov Loj Loj Loj 16.0 hli ± 1.5mm 32.5mm ± 2mm
Secondary Flat Length 8.0 hli ± 1.5mm 18.0 hli ± 2 hli
Thawj Txoj Kev Ncaj Ncees Parallelto <11-20> ± 5.0° Parallelto <11-20> ± 5.0c
Secondary Flat Orientation 90 ° CW los ntawm thawj ± 5.0 °, silicon ntsej muag 90 ° CW los ntawm thawj ± 5.0 °, silicon ntsej muag
Nto tiav C-Face: Optical Polish, Si-Face: CMP C-Face: OpticalPolish, Si-Face: CMP
Wafer Ntug Beveling Beveling
Nto Roughness Si-Face Ra <0.2 nm Si-Face Ra <0.2nm
Thickness 350.0 ± 25.0um 350.0 ± 25.0um
Polytype 4H 4H
Doping p-Type p-Type

Cov qauv hais txog qhov loj

Loj 6 nti
Txoj kab uas hla 150.0mm + 0/-0.2 hli
Surface Orientation 4 ° rau <11-20> ± 0.5 °
Qhov Loj Loj Loj 47.5 hli ± 1.5mm
Secondary Flat Length Tsis muaj
Thawj Txoj Kev Ncaj Ncees Parallel rau <11-20> ± 5.0°
SecondaryFlat Orientation 90 ° CW los ntawm thawj ± 5.0 °, silicon ntsej muag
Nto tiav C-Face: Optical Polish, Si-Face: CMP
Wafer Ntug Beveling
Nto Roughness Si-Face Ra <0.2 nm
Thickness 350.0 ± 25.0μm
Polytype 4H
Doping p-Type

Raman

2-6 nti 4 ° tawm-lub kaum sab xis P-hom 4H-SiC substrate-3

Rocking nkhaus

2-6 nti 4 ° tawm-lub kaum sab xis P-hom 4H-SiC substrate-4

Dislocation ceev (KOH etching)

2-6 nti 4 ° tawm-lub kaum sab xis P-hom 4H-SiC substrate-5

KOH etching duab

2-6 nti 4 ° tawm-lub kaum sab xis P-hom 4H-SiC substrate-6
SiC wafers

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