Semicera's 2 ~ 6 nti 4 ° off-angle P-hom 4H-SiC substrates yog tsim los ua kom tau raws li qhov kev xav tau loj hlob ntawm lub zog ua haujlwm siab thiab RF ntaus ntawv manufacturers. Qhov kev taw qhia 4 ° tawm ntawm lub kaum sab xis kom ntseeg tau tias qhov kev loj hlob zoo ntawm epitaxial, ua rau lub substrate zoo tagnrho rau ntau yam khoom siv semiconductor, suav nrog MOSFETs, IGBTs, thiab diodes.
Qhov no 2 ~ 6 nti 4 ° tawm-lub kaum sab xis P-hom 4H-SiC substrate muaj cov khoom zoo heev, nrog rau cov thermal conductivity, kev ua tau zoo ntawm hluav taws xob, thiab kev ruaj ntseg zoo heev. Lub off-angle orientation pab txo micropipe ceev thiab txhawb nqa cov txheej txheem epitaxial smoother, uas yog qhov tseem ceeb rau kev txhim kho kev ua tau zoo thiab kev ntseeg siab ntawm cov khoom siv semiconductor kawg.
Semicera's 2 ~ 6 nti 4 ° tawm-lub kaum sab xis P-hom 4H-SiC substrates muaj nyob rau hauv ntau txoj kab uas hla, xws li 2 ntiv mus rau 6 ntiv tes, kom ua tau raws li kev tsim khoom sib txawv. Peb cov substrates tau raug tsim ua tiav los muab cov qib doping zoo ib yam thiab cov yam ntxwv zoo ntawm lub ntsej muag, kom ntseeg tau tias txhua lub wafer ua tau raws li cov lus qhia nruj uas yuav tsum tau ua rau kev siv hluav taws xob siab heev.
Semicera kev cog lus rau kev tsim kho tshiab thiab kev ua tau zoo ua kom peb cov 2 ~ 6 nti 4 ° off-angle P-hom 4H-SiC substrates xa cov kev ua tau zoo sib xws hauv ntau hom kev siv hluav taws xob hluav taws xob mus rau cov khoom siv ntau zaus. Cov khoom no muab cov kev daws teeb meem rau cov tiam tom ntej ntawm kev siv hluav taws xob, kev ua haujlwm siab semiconductors, txhawb kev nce qib hauv kev lag luam xws li automotive, telecommunications, thiab lub zog tauj dua tshiab.
Cov qauv hais txog qhov loj
Loj | 2-Inch | 4-Inch |
Txoj kab uas hla | 50.8 hli ± 0.38 hli | 100.0mm + 0/-0.5 hli |
Surface Orentation | 4 ° rau <11-20> ± 0.5 ° | 4 ° rau <11-20> ± 0.5 ° |
Qhov Loj Loj Loj | 16.0 hli ± 1.5mm | 32.5mm ± 2mm |
Secondary Flat Length | 8.0 hli ± 1.5mm | 18.0 hli ± 2 hli |
Thawj Txoj Kev Ncaj Ncees | Parallelto <11-20> ± 5.0° | Parallelto <11-20> ± 5.0c |
Secondary Flat Orientation | 90 ° CW los ntawm thawj ± 5.0 °, silicon ntsej muag | 90 ° CW los ntawm thawj ± 5.0 °, silicon ntsej muag |
Nto tiav | C-Face: Optical Polish, Si-Face: CMP | C-Face: OpticalPolish, Si-Face: CMP |
Wafer Ntug | Beveling | Beveling |
Nto Roughness | Si-Face Ra <0.2 nm | Si-Face Ra <0.2nm |
Thickness | 350.0 ± 25.0um | 350.0 ± 25.0um |
Polytype | 4H | 4H |
Doping | p-Type | p-Type |
Cov qauv hais txog qhov loj
Loj | 6-Inch |
Txoj kab uas hla | 150.0mm + 0/-0.2 hli |
Surface Orientation | 4 ° rau <11-20> ± 0.5 ° |
Qhov Loj Loj Loj | 47.5 hli ± 1.5mm |
Secondary Flat Length | Tsis muaj |
Thawj Txoj Kev Ncaj Ncees | Parallel rau <11-20> ± 5.0° |
SecondaryFlat Orientation | 90 ° CW los ntawm thawj ± 5.0 °, silicon ntsej muag |
Nto tiav | C-Face: Optical Polish, Si-Face: CMP |
Wafer Ntug | Beveling |
Nto Roughness | Si-Face Ra <0.2 nm |
Thickness | 350.0 ± 25.0μm |
Polytype | 4H |
Doping | p-Type |