Semicerazoo siab muab2" Gallium Oxide Substrates, cov khoom siv txiav-ntug tsim los txhim kho kev ua tau zoo ntawm cov khoom siv semiconductor siab heev. Cov substrates no, ua los ntawm Gallium Oxide (Ga2O3), feature ib qho ultra-wide bandgap, ua rau lawv yog ib qho kev xaiv zoo tshaj plaws rau kev siv hluav taws xob siab, siab zaus, thiab UV optoelectronic daim ntaub ntawv.
Cov yam ntxwv tseem ceeb:
• Ultra-Wide Bandgap: Cov2" Gallium Oxide Substratesmuab qhov zoo tshaj plaws bandgap ntawm kwv yees li 4.8 eV, tso cai rau kev ua haujlwm siab dua thiab qhov kub thiab txias, tshaj qhov muaj peev xwm ntawm cov khoom siv semiconductor ib txwm muaj xws li silicon.
•Exceptional Breakdown Voltage: Cov substrates no tso cai rau cov cuab yeej siv los tswj cov hluav taws xob ntau dua, ua rau lawv zoo tshaj plaws rau cov hluav taws xob hluav taws xob, tshwj xeeb tshaj yog nyob rau hauv high-voltage applications.
•Zoo heev thermal conductivity: Nrog superior thermal stability, cov substrates muaj kev ua tau zoo ib yam txawm nyob rau hauv huab cua kub ib puag ncig, zoo tagnrho rau high-power thiab high-temperature daim ntaub ntawv.
•Cov khoom siv zoo: Cov2" Gallium Oxide Substratesmuab qhov tsis xws luag thiab siab crystalline zoo, ua kom ntseeg tau thiab ua tau zoo ntawm koj cov khoom siv semiconductor.
•Kev siv ntau yam: Cov substrates no haum rau ntau yam kev siv, suav nrog cov hluav taws xob transistors, Schottky diodes, thiab UV-C LED li, muab lub hauv paus ruaj khov rau ob lub zog thiab optoelectronic innovation.
Xauv tag nrho lub peev xwm ntawm koj cov khoom siv semiconductor nrog Semicera's2" Gallium Oxide Substrates. Peb cov substrates yog tsim los ua kom tau raws li qhov xav tau ntawm cov kev siv niaj hnub no, ua kom muaj kev ua haujlwm siab, kev ntseeg siab, thiab kev ua haujlwm zoo. Xaiv Semicera rau lub xeev-of-the-art semiconductor cov ntaub ntawv uas tsav innovation.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
