Semiceratxaus siab los nthuav qhia cov30mm Aluminium Nitride Wafer Substrate, cov khoom siv sab saum toj tau tsim los ua kom tau raws li cov kev xav tau nruj ntawm cov ntawv siv hluav taws xob niaj hnub thiab optoelectronic. Aluminium Nitride (AlN) substrates muaj npe nrov rau lawv cov thermal conductivity thiab hluav taws xob rwb thaiv tsev, ua rau lawv xaiv zoo tshaj plaws rau cov khoom siv ua haujlwm siab.
Cov yam ntxwv tseem ceeb:
• Exceptional Thermal conductivity: Cov30mm Aluminium Nitride Wafer Substrateboasts lub thermal conductivity txog li 170 W / mK, ntau dua li lwm cov ntaub ntawv substrate, kom ntseeg tau tias muaj cua sov dissipation nyob rau hauv high-power daim ntaub ntawv.
•High hluav taws xob rwb thaiv tsev: Nrog cov khoom siv hluav taws xob zoo heev, cov khoom siv no txo qis kev sib tham thiab teeb liab cuam tshuam, ua rau nws zoo tagnrho rau RF thiab microwave daim ntaub ntawv.
•Mechanical Strength: Cov30mm Aluminium Nitride Wafer Substratemuaj superior mechanical zog thiab stability, ua kom durability thiab kev cia siab txawm nyob rau hauv nruj kev khiav hauj lwm tej yam kev mob.
•Kev siv ntau yam: Lub substrate no zoo meej rau siv nyob rau hauv high-power LEDs, laser diodes, thiab RF Cheebtsam, muab ib tug robust thiab txhim khu kev qha foundation rau koj xav tau tshaj plaws tej yaam num.
•Precision Fabrication: Semicera xyuas kom meej tias txhua wafer substrate yog fabricated nrog lub siab tshaj plaws precision, muab cov tuab tuab thiab nto zoo kom tau raws li cov qauv ntawm cov khoom siv hluav taws xob siab heev.
Ua kom siab tshaj qhov ua tau zoo thiab kev ntseeg siab ntawm koj cov khoom siv nrog Semicera's30mm Aluminium Nitride Wafer Substrate. Peb cov substrates yog tsim los xa cov kev ua tau zoo tshaj plaws, kom ntseeg tau tias koj lub tshuab hluav taws xob thiab optoelectronic ua haujlwm ntawm lawv qhov zoo tshaj plaws. Trust Semicera rau cov ntaub ntawv txiav-ntug uas ua rau kev lag luam zoo thiab kev tsim kho tshiab.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
