Semicera 3C-SiC Wafer Substrates yog tsim los muab lub platform muaj zog rau cov khoom siv hluav taws xob txuas ntxiv mus thiab cov khoom siv ntau zaus. Nrog superior thermal zog thiab cov yam ntxwv hluav taws xob, cov substrates no yog tsim los ua kom tau raws li qhov xav tau ntawm cov cuab yeej siv niaj hnub no.
Lub 3C-SiC (Cubic Silicon Carbide) qauv ntawm Semicera Wafer Substrates muaj qhov tshwj xeeb zoo, nrog rau cov thermal conductivity ntau dua thiab qis dua thermal expansion coefficient piv rau lwm cov khoom siv semiconductor. Qhov no ua rau lawv xaiv zoo heev rau cov khoom siv ua haujlwm nyob rau hauv qhov kub thiab txias thiab lub zog siab.
Nrog rau qhov hluav taws xob tawg hluav taws xob siab thiab kev ruaj ntseg tshuaj zoo dua, Semicera 3C-SiC Wafer Substrates ua kom muaj kev ua haujlwm ntev thiab kev ntseeg tau. Cov khoom no tseem ceeb heev rau kev siv xws li high-frequency radar, solid-state teeb pom kev zoo, thiab fais fab inverters, qhov ua tau zoo thiab kav ntev yog qhov tseem ceeb.
Semicera qhov kev cog lus rau kev ua tau zoo yog pom nyob rau hauv cov txheej txheem tsim khoom zoo ntawm lawv cov 3C-SiC Wafer Substrates, kom ntseeg tau tias muaj kev sib luag thiab sib xws hauv txhua pawg. Qhov kev ua tau zoo no ua rau muaj kev ua tau zoo tag nrho thiab lub neej ntev ntawm cov khoom siv hluav taws xob tsim los ntawm lawv.
Los ntawm kev xaiv Semicera 3C-SiC Wafer Substrates, cov tuam txhab tau txais kev nkag mus rau cov khoom siv txiav uas ua rau muaj kev loj hlob ntawm cov khoom siv hluav taws xob me me, sai dua, thiab muaj txiaj ntsig zoo dua. Semicera tseem txhawb nqa thev naus laus zis tshiab los ntawm kev muab cov kev daws teeb meem txhim khu kev qha uas ua tau raws li cov kev xav tau ntawm kev lag luam semiconductor.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
