3C-SiC Wafer Substrate

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Semicera 3C-SiC Wafer Substrates muab cov thermal conductivity zoo dua thiab cov hluav taws xob tawg hluav taws xob siab, zoo tagnrho rau lub zog hluav taws xob thiab cov khoom siv siab. Cov substrates no yog precision-engineered rau kev pom kev ua tau zoo nyob rau hauv hnyav ib puag ncig, kom ntseeg tau thiab efficiency. Xaiv Semicera rau cov kev daws teeb meem tshiab thiab qib siab.


Product Detail

Khoom cim npe

Semicera 3C-SiC Wafer Substrates yog tsim los muab lub platform muaj zog rau cov khoom siv hluav taws xob txuas ntxiv mus thiab cov khoom siv ntau zaus. Nrog superior thermal zog thiab cov yam ntxwv hluav taws xob, cov substrates no yog tsim los ua kom tau raws li qhov xav tau ntawm cov cuab yeej siv niaj hnub no.

Lub 3C-SiC (Cubic Silicon Carbide) qauv ntawm Semicera Wafer Substrates muaj qhov tshwj xeeb zoo, nrog rau cov thermal conductivity ntau dua thiab qis dua thermal expansion coefficient piv rau lwm cov khoom siv semiconductor. Qhov no ua rau lawv xaiv zoo heev rau cov khoom siv ua haujlwm nyob rau hauv qhov kub thiab txias thiab lub zog siab.

Nrog rau qhov hluav taws xob tawg hluav taws xob siab thiab kev ruaj ntseg tshuaj zoo dua, Semicera 3C-SiC Wafer Substrates ua kom muaj kev ua haujlwm ntev thiab kev ntseeg tau. Cov khoom no tseem ceeb heev rau kev siv xws li high-frequency radar, solid-state teeb pom kev zoo, thiab fais fab inverters, qhov ua tau zoo thiab kav ntev yog qhov tseem ceeb.

Semicera qhov kev cog lus rau kev ua tau zoo yog pom nyob rau hauv cov txheej txheem tsim khoom zoo ntawm lawv cov 3C-SiC Wafer Substrates, kom ntseeg tau tias muaj kev sib luag thiab sib xws hauv txhua pawg. Qhov kev ua tau zoo no ua rau muaj kev ua tau zoo tag nrho thiab lub neej ntev ntawm cov khoom siv hluav taws xob tsim los ntawm lawv.

Los ntawm kev xaiv Semicera 3C-SiC Wafer Substrates, cov tuam txhab tau txais kev nkag mus rau cov khoom siv txiav uas ua rau muaj kev loj hlob ntawm cov khoom siv hluav taws xob me me, sai dua, thiab muaj txiaj ntsig zoo dua. Semicera tseem txhawb nqa thev naus laus zis tshiab los ntawm kev muab cov kev daws teeb meem txhim khu kev qha uas ua tau raws li cov kev xav tau ntawm kev lag luam semiconductor.

Cov khoom

Ntau lawm

Kev tshawb fawb

Dummy

Crystal Parameters

Polytype

4H

Deg orientation yuam kev

11-20 > 4 ± 0.15 °

Hluav taws xob Parameters

Dopant

n-hom Nitrogen

Kev tiv thaiv

0.015-0.025ohm · cm

Mechanical Parameters

Txoj kab uas hla

150.0 ± 0.2 hli

Thickness

350 ± 25 hli

Lub hauv paus tiaj tus taw qhia

[1-100] ± 5°

Thawj lub tiaj tiaj ntev

47.5 ± 1.5 hli

Secondary flat

Tsis muaj

TTV

≤ 5 hli

≤10 hli

≤ 15 hli

LTV

≤ 3 μm (5mm * 5mm)

≤ 5 μm (5mm * 5mm)

≤ 10 μm (5mm * 5mm)

Hneev

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤ 35 hli

≤ 45 hli

≤ 55 hli

Pem hauv ntej (Si-face) roughness (AFM)

Ra≤0.2nm (5μm * 5μm)

Qauv

Micropipe ceev

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Hlau impurities

≤5E10 atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Pem hauv ntej zoo

Pem hauv ntej

Si

Nto tiav

Lub ntsej muag CMP

Cov khoom

≤60ea / wafer (qhov loj ≥0.3μm)

NA

Kos

≤5ea / hli Kev sib sau ntev ≤ Diameter

Qhov ntev ≤2 * Txoj kab uas hla

NA

Txiv kab ntxwv tev / pits / stains / striations / tawg / paug

Tsis muaj

NA

Ntug chips / indents / tawg / hex daim hlau

Tsis muaj

Polytype cheeb tsam

Tsis muaj

Thaj tsam ≤ 20%

Thaj tsam ≤ 30%

Pem hauv ntej laser npav

Tsis muaj

Back Quality

Rov qab ua tiav

C-ntsej muag CMP

Kos

≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla

NA

Back defects (ntug chips / indents)

Tsis muaj

Rov qab roughness

Ra≤0.2nm (5μm * 5μm)

Rov qab laser npav

1mm (los ntawm sab saum toj ntug)

Ntug

Ntug

Chamfer

Ntim

Ntim

Epi-npaj nrog lub tshuab nqus tsev ntim

Multi-wafer cassette ntim

* Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD.

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SiC wafers

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