Semicera's 4", 6", thiab 8" N-type SiC Ingots sawv cev rau kev sib tw hauv cov khoom siv semiconductor, tsim los ua kom tau raws li qhov xav tau ntawm cov tshuab hluav taws xob niaj hnub thiab lub zog hluav taws xob. kev ua haujlwm thiab kev ua haujlwm ntev.
Peb cov N-hom SiC ingots yog tsim los siv cov txheej txheem tsim khoom siab heev uas txhim kho lawv cov hluav taws xob conductivity thiab thermal stability. Qhov no ua rau lawv zoo tagnrho rau kev siv hluav taws xob siab thiab kev siv ntau zaus, xws li inverters, transistors, thiab lwm yam khoom siv hluav taws xob hluav taws xob uas qhov ua tau zoo thiab kev ntseeg siab yog qhov tseem ceeb.
Qhov tseeb doping ntawm cov ingots no ua kom ntseeg tau tias lawv muaj kev ua haujlwm zoo ib yam thiab rov ua dua. Qhov kev sib raug zoo no yog qhov tseem ceeb rau cov neeg tsim khoom thiab cov tuam txhab lag luam uas thawb cov ciam teb ntawm cov thev naus laus zis hauv thaj chaw xws li aerospace, tsheb, thiab kev sib txuas lus. Semicera's SiC ingots pab tsim cov khoom siv uas ua haujlwm tau zoo nyob rau hauv cov xwm txheej hnyav.
Xaiv Semicera's N-hom SiC Ingots txhais tau hais tias kev sib koom ua ke cov ntaub ntawv uas tuaj yeem tswj tau qhov kub thiab txias thiab hluav taws xob siab tau yooj yim. Cov ingots no tshwj xeeb tshaj yog tsim nyog rau kev tsim cov khoom uas xav tau kev tswj xyuas thermal zoo thiab kev ua haujlwm siab, xws li RF amplifiers thiab fais fab modules.
Los ntawm kev xaiv rau Semicera's 4", 6", thiab 8" N-hom SiC Ingots, koj tab tom nqis peev hauv cov khoom lag luam uas sib txuas cov khoom tshwj xeeb nrog rau qhov tseeb thiab kev ntseeg tau xav tau los ntawm cov khoom siv hluav taws xob semiconductor. muab cov kev daws teeb meem tshiab uas tsav kev nce qib ntawm kev tsim khoom siv hluav taws xob.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Lub hauv paus tiaj tus taw qhia | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
