4 "6" Semi-Insulating SiC Substrate

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Semi-insulating SiC substrates yog cov khoom siv hluav taws xob semiconductor uas muaj kev tiv thaiv siab, nrog kev tiv thaiv siab dua 100,000Ω·cm. Semi-insulating SiC substrates feem ntau yog siv los tsim cov khoom siv microwave RF xws li gallium nitride microwave RF cov khoom siv thiab cov khoom siv hluav taws xob siab (HEMTs). Cov khoom siv no tsuas yog siv hauv 5G kev sib txuas lus, kev sib txuas lus satellite, radars thiab lwm yam.


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Semicera's 4 "6" Semi-Insulating SiC Substrate yog cov khoom siv zoo tsim los ua kom tau raws li cov kev cai nruj ntawm RF thiab cov khoom siv hluav taws xob. Lub substrate combines cov thermal conductivity zoo heev thiab siab tawg voltage ntawm silicon carbide nrog semi-insulating zog, ua rau nws yog ib qho kev xaiv zoo tshaj plaws rau kev tsim cov khoom siv semiconductor siab heev.

4 "6" Semi-Insulating SiC Substrate yog ua tib zoo tsim los xyuas kom meej cov khoom siv purity siab thiab ua haujlwm zoo ib yam. Qhov no ua kom ntseeg tau tias lub substrate muab cov hluav taws xob tsim nyog nyob rau hauv RF li xws li amplifiers thiab transistors, thaum tseem muab cov thermal efficiency yuav tsum tau rau high-power daim ntaub ntawv. Qhov tshwm sim yog ntau yam substrate uas tuaj yeem siv rau hauv ntau yam khoom siv hluav taws xob ua haujlwm siab.

Semicera paub txog qhov tseem ceeb ntawm kev muab cov khoom siv txhim khu kev qha, tsis muaj qhov tsis xws luag rau kev siv cov khoom siv hluav taws xob tseem ceeb. Peb 4 "6" Semi-Insulating SiC Substrate yog tsim los siv cov txheej txheem tsim khoom uas txo cov khoom siv lead ua thiab txhim kho cov khoom sib xws. Qhov no ua rau cov khoom siv los txhawb kev tsim cov khoom siv nrog kev ua tau zoo, ruaj khov, thiab lub neej ntev.

Semicera kev cog lus rau kev ua tau zoo ua kom peb 4 "6" Semi-Insulating SiC Substrate muab kev ntseeg tau thiab ua tau zoo nyob thoob plaws ntau yam kev siv. Txawm hais tias koj tab tom tsim cov cuab yeej siv hluav taws xob ntau lossis cov kev daws teeb meem siv hluav taws xob, peb cov khoom siv hluav taws xob semi-insulating SiC muab lub hauv paus rau kev ua tiav ntawm cov khoom siv hluav taws xob txuas ntxiv mus.

Basic tsis

Loj

6-nti 4-nti
Txoj kab uas hla 150.0mm + 0mm / -0.2 hli 100.0mm + 0mm / -0.5 hli
Surface Orientation {0001}± 0.2°
Thawj Txoj Kev Ncaj Ncees / <1120> ± 5°
SecondaryFlat Orientation / Silicon lub ntsej muag: 90 ° CW los ntawm Prime flat 士5 °
Qhov Loj Loj Loj / 32.5mm thiab 2.0mm
Secondary Flat Length / 18.0mm thiab 2.0mm
Notch Orientation <1100> ± 1.0° /
Notch Orientation 1.0mm + 0.25mm /-0.00 hli /
Lub kaum ntse ntse 90 ° + 5 ° / -1 ° /
Thickness 500.0um thiab 25.0um
Hom kev coj Semi-insulating

Crystal zoo cov ntaub ntawv

lwm 6-nti 4-nti
Kev tiv thaiv ≥1E9Q·cm
Polytype Tsis tau tso cai
Micropipe ntom ntom ≤ 0.5 / cm2 ≤ 0.3 / cm2
Hex Phaj los ntawm kev siv lub teeb ci siab Tsis tau tso cai
Visual Carbon Inclusions los ntawm siab Thaj tsam ≤ 0.05%
4 6 Semi-Insulating SiC Substrate-2

Resistivity - Kuaj los ntawm cov ntawv tsis sib cuag.

4 6 Semi-Insulating SiC Substrate-3

Micropipe ntom ntom

4 6 Semi-Insulating SiC Substrate-4
SiC wafers

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