Semiceratxaus siab qhia nws4" Gallium Oxide Substrates, cov khoom siv hauv av tsim kho kom tau raws li qhov xav tau ntawm cov khoom siv hluav taws xob ua haujlwm siab. Gallium Oxide (G2O3) substrates muab cov bandgap ultra-wide, ua rau lawv zoo tagnrho rau cov khoom siv hluav taws xob txuas ntxiv mus, UV optoelectronics, thiab cov khoom siv ntau zaus.
Cov yam ntxwv tseem ceeb:
• Ultra-Wide Bandgap: Cov4" Gallium Oxide Substrateskhav theeb bandgap ntawm kwv yees li 4.8 eV, tso cai rau qhov tshwj xeeb voltage thiab kub kam rau ua, ua tau zoo dua cov khoom siv semiconductor ib txwm zoo li silicon.
•High Breakdown Voltage: Cov substrates no tso cai rau cov cuab yeej ua haujlwm ntawm cov hluav taws xob ntau dua thiab lub zog, ua rau lawv zoo tshaj plaws rau kev siv hluav taws xob siab hauv hluav taws xob hluav taws xob.
•Superior Thermal stability: Gallium Oxide substrates muab cov thermal conductivity zoo, ua kom muaj kev ruaj khov nyob rau hauv cov xwm txheej huab cua, zoo tagnrho rau siv rau hauv qhov chaw xav tau.
•Cov Khoom Siv Zoo: Nrog rau qhov tsis xws luag tej yam me me thiab siab siv lead ua cov khoom zoo, cov kev ua tau zoo ib yam, txhim kho kev ua haujlwm zoo ib yam, txhim kho koj cov khoom siv.
•Kev siv ntau yam: Haum rau ntau yam kev siv, suav nrog cov hluav taws xob transistors, Schottky diodes, thiab UV-C LED li, ua kom muaj kev hloov kho tshiab hauv ob lub zog thiab optoelectronic teb.
Tshawb nrhiav yav tom ntej ntawm semiconductor technology nrog Semicera's4" Gallium Oxide Substrates. Peb cov substrates yog tsim los txhawb cov kev siv siab tshaj plaws, muab kev ntseeg siab thiab kev ua tau zoo uas yuav tsum tau muaj rau cov khoom siv niaj hnub no. Cia siab rau Semicera rau qhov zoo thiab kev tsim kho tshiab hauv koj cov khoom siv semiconductor.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
