Semicera's 4 Nti High Purity Semi-Insulating (HPSI) SiC Ob Chav Sab Polished Wafer Substrates yog tsim los ua kom tau raws li qhov xav tau ntawm kev lag luam semiconductor. Cov substrates no yog tsim los nrog tshwj xeeb flatness thiab purity, muab ib qho kev pom zoo platform rau cov khoom siv hluav taws xob.
Cov HPSI SiC wafers txawv los ntawm lawv cov thermal conductivity thiab hluav taws xob rwb thaiv tsev, ua rau lawv xaiv zoo heev rau kev siv high-frequency thiab high-power. Cov txheej txheem ob sab polishing ua kom muaj qhov tsawg kawg nkaus roughness, uas yog qhov tseem ceeb rau kev txhim kho cov cuab yeej ua haujlwm thiab kev ua haujlwm ntev.
Lub siab purity ntawm Semicera's SiC wafers txo qhov tsis xws luag thiab impurities, ua rau cov nqi siab dua thiab kev ntseeg siab ntawm cov cuab yeej. Cov substrates no tsim nyog rau ntau yam kev siv, suav nrog cov khoom siv microwave, hluav taws xob hluav taws xob, thiab LED thev naus laus zis, qhov tseeb thiab kav ntev yog qhov tseem ceeb.
Nrog rau kev tsom mus rau kev tsim kho tshiab thiab kev ua tau zoo, Semicera siv cov txheej txheem tsim khoom siab heev los tsim cov wafers uas ua tau raws li cov kev cai nruj ntawm cov khoom siv hluav taws xob niaj hnub no. Qhov ob-sided polishing tsis tsuas yog txhim kho cov neeg kho tshuab lub zog tab sis kuj txhawb kev sib koom ua ke zoo dua nrog lwm cov khoom siv semiconductor.
Los ntawm kev xaiv Semicera's 4 Nti High Purity Semi-Insulating HPSI SiC Ob Chav-side Polished Wafer Substrates, cov tuam ntxhab tuaj yeem siv cov txiaj ntsig ntawm kev txhim kho thermal tswj thiab hluav taws xob rwb thaiv tsev, paving txoj hauv kev rau kev txhim kho cov khoom siv hluav taws xob ntau dua thiab muaj zog. Semicera tseem ua tus thawj coj hauv kev lag luam nrog nws txoj kev cog lus rau kev ua tau zoo thiab kev vam meej.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
