Semicera's 4 Nti N-hom SiC Substrates yog tsim los ua kom tau raws li cov qauv tsim nyog ntawm kev lag luam semiconductor. Cov substrates no muab lub hauv paus ua tau zoo rau ntau yam kev siv hluav taws xob, muab cov khoom tshwj xeeb thiab thermal zog.
N-hom doping ntawm cov SiC substrates txhim kho lawv cov hluav taws xob conductivity, ua rau lawv tshwj xeeb tshaj yog haum rau cov kev siv hluav taws xob siab thiab kev siv ntau zaus. Cov cuab yeej no tso cai rau kev ua haujlwm zoo ntawm cov khoom siv xws li diodes, transistors, thiab amplifiers, uas txo qis zog poob yog qhov tseem ceeb.
Semicera siv cov txheej txheem tsim khoom hauv lub xeev los xyuas kom meej tias txhua lub substrate nthuav tawm qhov zoo ntawm qhov zoo thiab sib xws. Qhov kev txiav txim siab no yog qhov tseem ceeb rau kev siv hluav taws xob hluav taws xob, cov khoom siv microwave, thiab lwm yam thev naus laus zis uas xav tau kev ua tau zoo hauv cov xwm txheej hnyav.
Kev koom ua ke ntawm Semicera's N-hom SiC substrates rau hauv koj cov kab ntau lawm txhais tau tias muaj txiaj ntsig los ntawm cov ntaub ntawv uas muaj cov cua sov zoo tshaj plaws thiab kev ruaj ntseg hluav taws xob. Cov substrates no zoo tagnrho rau kev tsim cov khoom siv uas yuav tsum tau ua haujlwm ntev thiab ua haujlwm zoo, xws li lub zog hloov pauv thiab RF amplifiers.
Los ntawm kev xaiv Semicera's 4 Nti N-hom SiC Substrates, koj tab tom nqis peev hauv cov khoom lag luam uas sib txuas cov khoom siv tshiab nrog kev ua haujlwm zoo. Semicera txuas ntxiv ua tus thawj coj hauv kev lag luam los ntawm kev muab cov kev daws teeb meem uas txhawb kev txhim kho cov thev naus laus zis semiconductor, ua kom muaj kev ua haujlwm siab thiab kev ntseeg siab.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Lub hauv paus tiaj tus taw qhia | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
