4 Nti SiC Substrate N-hom

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Semicera muaj ntau yam ntawm 4H-8H SiC wafers. Tau ntau xyoo, peb tau ua cov chaw tsim khoom thiab cov khoom lag luam rau cov khoom lag luam semiconductor thiab photovoltaic industries. Peb cov khoom tseem ceeb muaj xws li: Silicon carbide etch daim hlau, silicon carbide nkoj trailer, silicon carbide wafer nkoj (PV & Semiconductor), silicon carbide furnace hlab, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide kab teeb, nrog rau CVDC co. TAC coatings. Npog feem ntau European thiab Asmeskas kev lag luam. Peb tos ntsoov yuav ua koj tus khub mus sij hawm ntev hauv Suav teb.

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Product Detail

Khoom cim npe

Silicon carbide (SiC) ib qho khoom siv lead ua muaj qhov sib txawv loj (~Si 3 zaug), thermal conductivity (~Si 3.3 npaug lossis GaAs 10 npaug), siab electron saturation migration rate (~Si 2.5 zaug), siab tawg hluav taws xob teb (~ Si 10 zaug lossis GaAs 5 zaug) thiab lwm yam zoo heev.

Semicera zog tuaj yeem muab cov neeg siv khoom zoo tshaj plaws Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Tsis tas li ntawd, peb tuaj yeem muab cov neeg siv khoom nrog homogeneous thiab heterogeneous silicon carbide epitaxial nplooj ntawv; Peb kuj tuaj yeem kho cov ntawv epitaxial raws li cov kev xav tau tshwj xeeb ntawm cov neeg siv khoom, thiab tsis muaj qhov tsawg kawg nkaus kom muaj nuj nqis.

Cov khoom	Ntau lawm	Kev tshawb fawb	Dummy
Crystal Parameters
Polytype	4H
Deg orientation yuam kev	11-20 > 4 ± 0.15 °
Hluav taws xob Parameters
Dopant	n-hom Nitrogen
Kev tiv thaiv	0.015-0.025ohm · cm
Mechanical Parameters
Txoj kab uas hla	99.5-100 hli
Thickness	350 ± 25 hli
Thawj qhov chaw tiaj tiaj	[1-100] ± 5°
Thawj lub tiaj tiaj ntev	32.5 ± 1.5 hli
Secondary flat txoj hauj lwm	90 ° CW los ntawm thawj lub tiaj tus ± 5 °. silicon ntsej muag
Secondary flat length	18 ± 1.5 hli
TTV	≤ 5 hli	≤10 hli	≤ 20 hli
LTV	≤ 2 μm (5mm * 5mm)	≤ 5 μm (5mm * 5mm)	NA
Hneev	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤ 20 hli	≤ 45 hli	≤ 50 hli
Pem hauv ntej (Si-face) roughness (AFM)	Ra≤0.2nm (5μm * 5μm)
Qauv
Micropipe ceev	≤ 1 ea/cm2	≤ 5 ea/cm2	≤10 ea/cm2
Hlau impurities	≤5E10 atoms/cm2		NA
BPD	≤1500 ea/cm2	≤3000 ea/cm2	NA
TSD	≤500 ea/cm2	≤1000 ea/cm2	NA
Pem hauv ntej zoo
Pem hauv ntej	Si
Nto tiav	Lub ntsej muag CMP
Cov khoom	≤60ea / wafer (qhov loj ≥0.3μm)	NA
Kos	≤2ea/mm Kev sib sau ntev ≤ Diameter	Qhov ntev ≤2 * Txoj kab uas hla	NA
Txiv kab ntxwv tev / pits / stains / striations / tawg / paug	Tsis muaj		NA
Ntug chips / indents / tawg / hex daim hlau	Tsis muaj		NA
Polytype cheeb tsam	Tsis muaj	Thaj tsam ≤ 20%	Thaj tsam ≤ 30%
Pem hauv ntej laser npav	Tsis muaj
Back Quality
Rov qab ua tiav	C-ntsej muag CMP
Kos	≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla	NA
Back defects (ntug chips / indents)	Tsis muaj
Rov qab roughness	Ra≤0.2nm (5μm * 5μm)
Rov qab laser npav	1mm (los ntawm sab saum toj ntug)
Ntug
Ntug	Chamfer
Ntim
Ntim	Lub hnab sab hauv yog ntim nrog nitrogen thiab lub hnab sab nraud yog nqus tau. Multi-wafer cassette, epi-npaj.
* Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD.