41 daim 4 nti graphite puag MOCVD khoom qhov chaw

Lus piav qhia luv luv:

Khoom taw qhia thiab siv: Muab 41 daim ntawm 4 teev substrate, siv rau loj hlob LED nrog xiav-ntsuab epitaxial zaj duab xis

Ntaus qhov chaw ntawm cov khoom: nyob rau hauv cov tshuaj tiv thaiv chamber, nyob rau hauv kev sib cuag ncaj qha nrog lub wafer

Cov khoom tseem ceeb hauv qab: LED chips

Kev lag luam loj kawg: LED


Product Detail

Khoom cim npe

Kev piav qhia

Peb lub tuam txhab muabSiC txheejtxheej txheem kev pab cuam los ntawm CVD txoj kev nyob rau saum npoo ntawm graphite, ceramics thiab lwm yam ntaub ntawv, thiaj li hais tias tshwj xeeb gases uas muaj carbon thiab silicon react ntawm kub kom tau siab purity SiC molecules, molecules tso rau saum npoo ntawm cov ntaub ntawv coated, tsim ib tugSiC tiv thaiv txheej.

41 daim 4 nti graphite puag MOCVD khoom qhov chaw

Lub ntsiab nta

1. Kub oxidation kuj:
oxidation kuj tseem zoo heev thaum kub siab li 1600 ℃.
2. High purity: ua los ntawm cov tshuaj vapor deposition nyob rau hauv siab kub chlorination mob.
3. Erosion kuj: siab hardness, compact nto, zoo hais.
4. Corrosion kuj: acid, alkali, ntsev thiab organic reagents.

 

Main Specifications ntawm CVD-SIC txheej

SiC-CVD Properties
Crystal Structure FCC β theem
Qhov ntom g / cm³ 3.21
Hardness Vickers hardness 2500
Loj Loj ib m 2 ~ 10
Tshuaj Purity % 99.999 5
Thaum tshav kub kub muaj peev xwm J·kg-1 · K-1 640
Sublimation kub 2700 ib
Felexural zog MPa (RT 4-point) 415
Young's Modulus Gpa (4pt khoov, 1300 ℃) 430
Thermal Expansion (CTE) 10-6K-1 4.5
Thermal conductivity (W / mK) 300
Semicera Chaw Ua Haujlwm
Semicera chaw ua haujlwm 2
Cov cuab yeej siv tshuab
CNN ua, tshuaj ntxuav, CVD txheej
Semicera Ware tsev
Peb qhov kev pabcuam

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