Semicera's 4 "6" High Purity Semi-Insulating SiC Ingots yog tsim los ua kom tau raws li cov qauv ntawm kev lag luam semiconductor. Cov ingots no yog tsim los ntawm kev tsom mus rau purity thiab sib xws, ua rau lawv yog qhov kev xaiv zoo tshaj plaws rau kev siv hluav taws xob siab thiab kev siv ntau zaus uas qhov kev ua tau zoo yog qhov tseem ceeb.
Cov khoom tshwj xeeb ntawm cov SiC ingots, suav nrog cov thermal conductivity thiab cov hluav taws xob zoo heev, ua rau lawv tshwj xeeb rau kev siv hluav taws xob hluav taws xob thiab cov khoom siv microwave. Lawv cov xwm txheej semi-insulating tso cai rau kev ua kom sov zoo thiab cuam tshuam hluav taws xob tsawg, ua rau muaj txiaj ntsig zoo thiab txhim khu kev qha.
Semicera ntiav cov txheej txheem tsim khoom hauv lub xeev los tsim cov khoom siv nrog qhov tshwj xeeb siv lead ua zoo thiab sib xws. Qhov no ua kom ntseeg tau tias txhua qhov ingot tuaj yeem siv tau rau hauv cov ntawv thov rhiab, xws li cov tshuab hluav taws xob ntau zaus, laser diodes, thiab lwm yam khoom siv optoelectronic.
Muaj nyob rau hauv ob qho tib si 4-nti thiab 6-nti qhov ntau thiab tsawg, Semicera's SiC ingots muab qhov yooj yim xav tau rau ntau qhov ntau lawm thiab cov kev xav tau thev naus laus zis. Txawm hais tias kev tshawb fawb thiab kev tsim kho lossis kev tsim khoom loj, cov khoom siv no xa cov kev ua tau zoo thiab ua haujlwm ntev uas niaj hnub siv hluav taws xob xav tau.
Los ntawm kev xaiv Semicera's High Purity Semi-Insulating SiC Ingots, koj tab tom nqis peev hauv cov khoom lag luam uas sib txuas cov khoom siv qib siab nrog kev tsim khoom tsis sib xws. Semicera tau mob siab rau kev txhawb nqa kev tsim kho tshiab thiab kev loj hlob ntawm kev lag luam semiconductor, muab cov ntaub ntawv uas ua rau kev txhim kho cov khoom siv hluav taws xob txiav.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
