1. Hais txogSilicon Carbide (SiC) Epitaxial Wafers
Silicon Carbide (SiC) epitaxial wafers yog tsim los ntawm kev tso ib txheej siv lead ua rau ntawm wafer siv silicon carbide ib leeg siv lead ua wafer ua substrate, feem ntau yog los ntawm cov tshuaj vapor deposition (CVD). Ntawm lawv, silicon carbide epitaxial yog npaj los ntawm kev loj hlob silicon carbide epitaxial txheej ntawm conductive silicon carbide substrate, thiab ntxiv fabricated rau hauv high-kev ua tau zoo li.
2.Silicon Carbide Epitaxial WaferSpecifications
Peb tuaj yeem muab 4, 6, 8 nti N-hom 4H-SiC epitaxial wafers. Lub epitaxial wafer muaj bandwidth loj, siab saturation electron drift ceev, kev kub ceev ob-dimensional electron gas, thiab siab tawg teb zog. Cov khoom no ua rau cov cuab yeej kub kub tsis kam, siab voltage tsis kam, hloov ceev ceev, tsis tshua muaj kev ua haujlwm, me me thiab lub teeb yuag.
3. SiC Epitaxial Applications
SiC epitaxial waferFeem ntau yog siv hauv Schottky diode (SBD), hlau oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated gate bipolar transistor (IGBT), uas yog siv. nyob rau hauv low-voltage, medium-voltage thiab high-voltage teb. Tam sim no,SiC epitaxial wafersrau high-voltage daim ntaub ntawv yog nyob rau hauv kev tshawb fawb thiab kev loj hlob theem thoob ntiaj teb.
