Semicera's 6-nti LiNbO3 Bonding Wafer yog tsim los ua kom tau raws li cov qauv nruj ntawm kev lag luam semiconductor, xa cov kev ua tau zoo tsis sib xws hauv kev tshawb fawb thiab kev tsim khoom. Txawm hais tias rau high-end optoelectronics, MEMS, los yog cov khoom ntim khoom ntim siab heev, qhov kev sib txuas wafer no muaj kev ntseeg siab thiab ua haujlwm ntev tsim nyog rau kev txhim kho thev naus laus zis.
Hauv kev lag luam semiconductor, 6-nti LiNbO3 Bonding Wafer yog dav siv rau kev sib txuas cov txheej nyias hauv cov khoom siv optoelectronic, sensors, thiab microelectromechanical systems (MEMS). Nws cov khoom tshwj xeeb ua rau nws muaj txiaj ntsig zoo rau cov ntawv thov uas xav tau cov txheej txheem sib xyaw ua ke, xws li hauv kev tsim cov khoom siv hluav taws xob sib xyaw (ICs) thiab cov khoom siv photonic. Lub siab purity ntawm wafer xyuas kom meej tias cov khoom kawg tswj kev ua haujlwm zoo, txo qis kev pheej hmoo ntawm kev sib kis uas tuaj yeem cuam tshuam rau kev ntseeg tau ntawm cov cuab yeej.
| Thermal thiab hluav taws xob khoom ntawm LiNbO3 | |
| Melting point | 1250 ℃ |
| Curie kub | 1140 ℃ |
| Thermal conductivity | 38 W / m / K @ 25 ℃ |
| Coefficient ntawm thermal expansion (@25 ° C) | ua, 2.0 × 10-6/K //c, 2.2 × 10-6/K |
| Kev tiv thaiv | 2 × 10-6Ω·cm @ 200 ℃ |
| Dielectric tsis tu ncua | εS11/ε0=43, T11/ε0=78 εS33/ε0=28, T33/ε0= 2 |
| Piezoelectric tsis tu ncua | D22= 2.04 x 10-11C/N D33= 19.22 x 10-11C/N |
| Electro-optic coefficient | γ T33= 32pm/V, γS33= 31 pm/V, γ T31= 10 pm/V, γS31= 8.6 pm/V, γ T22= 6.8 pm/V, γS22= 3.4 pm/V, |
| Ib nrab-yoj voltage, DC | 3.03 kwm 4, 02 kwb |
Lub 6-nti LiNbO3 Bonding Wafer los ntawm Semicera yog tshwj xeeb tsim los rau kev siv siab heev hauv kev lag luam semiconductor thiab optoelectronics. Paub txog nws cov kev hnav zoo tshaj plaws, kev ruaj ntseg siab thermal, thiab tshwj xeeb purity, qhov kev sib koom ua ke wafer yog qhov zoo tagnrho rau kev ua haujlwm siab semiconductor, muab kev ntseeg tau ntev ntev thiab precision txawm nyob rau hauv kev xav tau.
Crafted nrog cov thev naus laus zis thev naus laus zis, 6-nti LiNbO3 Bonding Wafer ua kom muaj kev sib kis tsawg, uas yog qhov tseem ceeb rau cov txheej txheem tsim khoom semiconductor uas yuav tsum tau muaj siab purity. Nws cov thermal stability zoo tso cai rau nws tiv taus qhov kub thiab txias yam tsis muaj kev cuam tshuam cov qauv kev ncaj ncees, ua rau nws xaiv qhov kev xaiv zoo rau cov ntawv thov kev sib txuas siab. Tsis tas li ntawd, lub wafer qhov zoo tshaj plaws hnav tsis kam ua kom ntseeg tau tias nws ua haujlwm tsis tu ncua ntawm kev siv txuas ntxiv, muab kev ua haujlwm ntev thiab txo qhov kev xav tau ntau zaus.
