6 Nti N-hom sic substrate

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6-nti n-hom SiC substrate yog cov khoom siv semiconductor tus yam ntxwv los ntawm kev siv 6-nti wafer loj, uas ua rau cov khoom siv ntau ntxiv tuaj yeem ua rau ntawm ib qho wafer hla thaj chaw loj dua, yog li txo cov nqi khoom siv. . Txoj kev loj hlob thiab kev siv ntawm 6-nti n-hom SiC substrates tau txais txiaj ntsig los ntawm kev nce qib ntawm cov thev naus laus zis xws li RAF txoj kev loj hlob, uas txo qis kev cuam tshuam los ntawm kev txiav cov nplais raws li qhov sib txawv thiab cov lus qhia sib luag thiab cov khoom siv rov ua dua tshiab, yog li txhim kho qhov zoo ntawm cov substrate. Daim ntawv thov ntawm cov substrate no yog qhov tseem ceeb heev rau kev txhim kho kev tsim khoom thiab txo cov nqi ntawm SiC cov khoom siv hluav taws xob.

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Product Detail

Khoom cim npe

Silicon carbide (SiC) ib qho khoom siv lead ua muaj qhov sib txawv loj (~Si 3 zaug), thermal conductivity (~Si 3.3 npaug lossis GaAs 10 npaug), siab electron saturation migration rate (~Si 2.5 zaug), siab tawg hluav taws xob teb (~ Si 10 zaug lossis GaAs 5 zaug) thiab lwm yam zoo heev.

Cov khoom siv semiconductor thib peb feem ntau suav nrog SiC, GaN, pob zeb diamond, thiab lwm yam, vim tias nws qhov sib txawv ntawm qhov dav (piv txwv li) ntau dua lossis sib npaug rau 2.3 electron volts (eV), tseem hu ua wide band gap semiconductor cov ntaub ntawv. Piv nrog rau thawj thiab thib ob tiam semiconductor cov ntaub ntawv, lub thib peb tiam semiconductor cov ntaub ntawv muaj qhov zoo ntawm high thermal conductivity, siab tawg hluav taws xob teb, siab saturated electron migration tus nqi thiab siab bonding zog, uas yuav ua tau raws li cov kev cai tshiab ntawm niaj hnub electronics technology rau siab. kub, siab zog, siab siab, siab zaus thiab hluav taws xob tsis kam thiab lwm yam mob hnyav. Nws muaj qhov tseem ceeb ntawm daim ntawv thov kev cia siab nyob rau hauv kev tiv thaiv lub teb chaws, aviation, aerospace, roj kev tshawb nrhiav, kho qhov muag, thiab lwm yam, thiab tuaj yeem txo qis zog los ntawm ntau tshaj 50% hauv ntau qhov kev lag luam xws li kev sib txuas lus broadband, hnub ci zog, kev tsim tsheb, semiconductor teeb pom kev zoo, thiab daim phiaj ntse, thiab tuaj yeem txo cov khoom ntim ntau dua 75%, uas yog qhov tseem ceeb tshaj plaws rau kev txhim kho tib neeg kev tshawb fawb thiab thev naus laus zis.

Semicera zog tuaj yeem muab cov neeg siv khoom zoo tshaj plaws Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Tsis tas li ntawd, peb tuaj yeem muab cov neeg siv khoom nrog homogeneous thiab heterogeneous silicon carbide epitaxial nplooj ntawv; Peb kuj tuaj yeem kho cov ntawv epitaxial raws li cov kev xav tau tshwj xeeb ntawm cov neeg siv khoom, thiab tsis muaj qhov tsawg kawg nkaus kom muaj nuj nqis.

KHOOM PLIG SPECIFICATIONS

Loj	6-nti
Txoj kab uas hla	150.0mm + 0mm / -0.2 hli
Surface Orientation	Tawm-axis: 4 ° mus rau <1120> ± 0.5 °
Qhov Loj Loj Loj	47.5mm 1.5 hli
Thawj Txoj Kev Ncaj Ncees	<1120> ± 1.0°
Secondary Flat	Tsis muaj
Thickness	350.0um ± 25.0um
Polytype	4H
Hom kev coj	n-type

CRYSTAL QUALITY SPECIFICATIONS

6-nti
Yam khoom	P-MOS Qib	P-SBD Qib
Kev tiv thaiv	0.015Ω·cm-0.025Ω·cm
Polytype	Tsis tau tso cai
Micropipe ntom ntom	≤ 0.2 / cm2	≤ 0.5 / cm2
EPD	≤4000/cm2	≤8000/cm2
TED	≤3000/cm2	≤6000/cm2
BPD	≤1000/cm2	≤2000/cm2
TSD	≤300/cm2	≤1000/cm2
SF (Measured by UV-PL-355nm)	≤0.5% thaj tsam	≤1% cheeb tsam
Hex phaj los ntawm kev siv lub teeb siab	Tsis tau tso cai
Visual CarbonInclusions los ntawm siab siv lub teeb	Qhov ntau thiab tsawg ≤0.05%