Semiceraqhia cov850V High Power GaN-on-Si Epi Wafer, ib tug breakthrough nyob rau hauv semiconductor innovation. Qhov no epi wafer ua ke nrog kev ua haujlwm siab ntawm Gallium Nitride (GaN) nrog tus nqi-zoo ntawm Silicon (Si), tsim kom muaj kev daws teeb meem rau cov ntawv siv hluav taws xob siab.
Cov yam ntxwv tseem ceeb:
•High Voltage tuav: Engineered los txhawb txog li 850V, GaN-on-Si Epi Wafer no yog qhov zoo tagnrho rau kev xav tau hluav taws xob hluav taws xob, ua kom muaj txiaj ntsig zoo dua thiab ua haujlwm tau zoo.
•Ua kom muaj zog ceev: Nrog superior electron mus thiab thermal conductivity, GaN technology tso cai rau compact designs thiab muaj zog ceev ceev.
•Nqi-zoo daws teeb meem: Los ntawm leveraging silicon li substrate, no epi wafer muaj ib tug nqi-zoo lwm txoj rau ib txwm GaN wafers, tsis muaj kev cuam tshuam rau qhov zoo los yog kev ua tau zoo.
•Kev siv dav dav: Zoo meej rau kev siv lub zog hloov pauv, RF amplifiers, thiab lwm yam khoom siv hluav taws xob muaj zog, ua kom muaj kev ntseeg siab thiab ua haujlwm ntev.
Tshawb nrhiav yav tom ntej ntawm high-voltage technology nrog Semicera's850V High Power GaN-on-Si Epi Wafer. Tsim los rau cov ntawv txiav-ntug, cov khoom no ua kom koj cov khoom siv hluav taws xob ua haujlwm nrog kev ua haujlwm siab tshaj plaws thiab kev ntseeg siab. Xaiv Semicera rau koj cov kev xav tau semiconductor tom ntej.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Lub hauv paus tiaj tus taw qhia | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
