8lnch n-hom Conductive SiC substrate

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8-nti n-hom SiC substrate yog ib qho zoo n-hom silicon carbide (SiC) ib leeg siv lead ua substrate nrog ib txoj kab uas hla ntawm 195 mus rau 205 hli thiab thickness li ntawm 300 txog 650 microns. Qhov no substrate muaj ib tug siab doping concentration thiab ua tib zoo optimized concentration profile, muab kev ua tau zoo heev rau ntau yam ntawm semiconductor daim ntaub ntawv.


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Khoom cim npe

8 lnch n-hom Conductive SiC Substrate muab kev ua tau zoo tsis sib xws rau cov khoom siv hluav taws xob hluav taws xob, muab cov thermal conductivity zoo, siab tawg voltage thiab zoo heev rau kev siv semiconductor siab heev. Semicera muab kev lag luam kev daws teeb meem nrog nws cov engineered 8 lnch n-hom Conductive SiC Substrate.

Semicera's 8 lnch n-hom Conductive SiC Substrate yog cov khoom siv txiav-ntug tsim los ua kom tau raws li qhov xav tau ntawm cov hluav taws xob hluav taws xob loj zuj zus thiab kev siv cov khoom siv hluav taws xob siab. Lub substrate muab cov txiaj ntsig zoo ntawm silicon carbide thiab n-hom conductivity kom xa cov kev ua haujlwm tsis sib xws hauv cov khoom siv uas xav tau lub zog siab ceev, thermal efficiency, thiab kev ntseeg tau.

Semicera's 8 lnch n-hom Conductive SiC Substrate yog ua tib zoo ua kom zoo dua qub thiab sib xws. Nws nta zoo thermal conductivity rau cov cua kub kom zoo, ua rau nws zoo tagnrho rau kev siv hluav taws xob siab xws li fais fab inverters, diodes, thiab transistors. Tsis tas li ntawd, lub substrate no lub siab tawg voltage ua kom nws muaj peev xwm tiv taus cov kev xav tau, muab lub platform muaj zog rau cov khoom siv hluav taws xob zoo.

Semicera paub txog lub luag haujlwm tseem ceeb uas 8 lnch n-hom Conductive SiC Substrate ua si hauv kev nce qib ntawm semiconductor technology. Peb cov substrates yog tsim los siv cov txheej txheem hauv lub xeev los xyuas kom meej qhov tsis xws luag, uas yog qhov tseem ceeb rau kev txhim kho cov khoom siv tau zoo. Qhov kev mloog zoo rau kev nthuav dav no ua rau cov khoom lag luam uas txhawb nqa cov khoom siv hluav taws xob txuas ntxiv nrog kev ua tau zoo dua thiab ua haujlwm ntev.

Peb 8 lnch n-hom Conductive SiC Substrate kuj tsim los ua kom tau raws li qhov xav tau ntawm ntau yam kev siv los ntawm tsheb mus rau lub zog tauj dua tshiab. n-hom conductivity muab cov khoom siv hluav taws xob uas xav tau los tsim cov khoom siv hluav taws xob zoo, ua rau lub substrate no yog ib qho tseem ceeb hauv kev hloov mus rau kev siv hluav taws xob ntau dua.

Ntawm Semicera, peb tau cog lus los muab cov substrates uas tsav kev tsim kho tshiab hauv kev tsim khoom semiconductor. 8 lnch n-hom Conductive SiC Substrate yog ib qho pov thawj rau peb txoj kev mob siab rau kev ua tau zoo thiab ua tau zoo, ua kom peb cov neeg siv khoom tau txais cov khoom siv tau zoo tshaj plaws rau lawv daim ntawv thov.

Basic tsis

Loj 8-nti
Txoj kab uas hla 200.0mm + 0mm / -0.2 hli
Surface Orientation off-axis: 4 ° mus rau <1120> thiab 0.5 °
Notch Orientation <1100> thiab 1°
Lub kaum ntse ntse 90 ° + 5 ° / -1 °
Notch Qhov tob 1mm + 0.25mm /-0mm
Secondary Flat /
Thickness 500.0 ± 25.0um / 350.0 ± 25.0um
Polytype 4H
Hom kev coj n-type

 

8lnch n-type sic Substrate-2
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