Semiceratxaus siab muabGa2O3Epitaxy, ib lub xeev-of-the-art daws teeb meem tsim los thawb cov ciam teb ntawm lub hwj chim electronics thiab optoelectronics. Qhov kev siv thev naus laus zis thev naus laus zis thev naus laus zis thev naus laus zis thev naus laus zis tshwj xeeb ntawm Gallium Oxide (Ga2O3) kom xa cov kev ua tau zoo tshaj plaws hauv kev thov kev thov.
Cov yam ntxwv tseem ceeb:
• Exceptional Wide Bandgap: Ga2O3Epitaxynta ib qho ultra-wide bandgap, tso cai rau kom muaj zog tawg ntau dua thiab ua haujlwm tau zoo hauv qhov chaw muaj zog.
•High Thermal conductivity: Cov txheej txheej epitaxial muab cov thermal conductivity zoo, ua kom ruaj khov txawm tias nyob rau hauv qhov kub thiab txias, ua rau nws zoo tagnrho rau cov khoom siv ntau zaus.
•Superior Material Quality: Ua tau zoo siv lead ua zoo nrog qhov tsis xws luag, kom ntseeg tau tias cov cuab yeej siv tau zoo thiab siv tau ntev, tshwj xeeb tshaj yog nyob rau hauv cov ntawv thov tseem ceeb xws li fais fab transistors thiab UV detectors.
•Versatility hauv kev siv: Zoo meej haum rau cov khoom siv hluav taws xob hluav taws xob, kev siv RF, thiab optoelectronics, muab lub hauv paus txhim khu kev qha rau cov khoom siv semiconductor txuas ntxiv mus.
Tshawb nrhiav lub peev xwm ntawmGa2O3Epitaxynrog Semicera cov kev daws teeb meem tshiab. Peb cov khoom siv epitaxial yog tsim los ua kom tau raws li cov qauv siab tshaj plaws ntawm kev ua tau zoo thiab kev ua tau zoo, ua rau koj cov khoom siv ua haujlwm nrog kev ua haujlwm siab tshaj plaws thiab kev ntseeg siab. Xaiv Semicera rau kev siv tshuab semiconductor.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Lub hauv paus tiaj tus taw qhia | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
