Semicera txaus siab los nthuav qhia covGa2O3Substrate, cov khoom siv txiav-ntug poised rau revolutionize fais fab electronics thiab optoelectronics.Gallium Oxide (G2O3) substratepaub txog lawv cov bandgap ultra-wide, ua rau lawv zoo tagnrho rau cov khoom siv hluav taws xob siab thiab cov khoom siv siab.
Cov yam ntxwv tseem ceeb:
• Ultra-Wide Bandgap: Ga2O3 muaj qhov sib txawv ntawm kwv yees li 4.8 eV, txhim kho nws lub peev xwm los tswj cov hluav taws xob siab thiab qhov kub thiab txias piv rau cov khoom siv ib txwm muaj xws li Silicon thiab GaN.
• High Breakdown Voltage: Nrog rau qhov tshwj xeeb tawg teb, lubGa2O3Substrateyog zoo meej rau cov khoom siv uas xav tau kev ua haujlwm siab-voltage, kom ntseeg tau tias kev ua haujlwm zoo dua thiab kev ntseeg siab.
• Thermal Stability: Cov khoom zoo tshaj thermal stability ua rau nws haum rau kev siv nyob rau hauv huab ib puag ncig, tswj kev ua tau zoo txawm nyob rau hauv hnyav hnyav.
• Kev siv ntau yam: Zoo tagnrho rau siv nyob rau hauv high-efficiency fais fab transistors, UV optoelectronic li, thiab lwm yam, muab lub hauv paus ruaj khov rau cov tshuab hluav taws xob siab heev.
Kev paub yav tom ntej ntawm semiconductor technology nrog Semicera'sGa2O3Substrate. Tsim los ua kom tau raws li qhov xav tau ntawm cov khoom siv hluav taws xob loj thiab cov khoom siv hluav taws xob ntau zaus, lub substrate no tau teeb tsa tus qauv tshiab rau kev ua tau zoo thiab kav ntev. Cia siab rau Semicera kom xa cov kev daws teeb meem tshiab rau koj cov ntawv thov nyuaj tshaj plaws.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
