Semiceratxaus siab nthuav tawm nws cov kev txiav-ntugGaN Epitaxycov kev pabcuam, tsim los ua kom tau raws li qhov xav tau ntawm kev lag luam semiconductor. Gallium nitride (GaN) yog ib yam khoom uas paub txog nws cov khoom tshwj xeeb, thiab peb cov txheej txheem kev loj hlob ntawm epitaxial ua kom ntseeg tau tias cov txiaj ntsig no tau tiav hauv koj cov khoom siv.
Kev Ua Haujlwm Siab GaN Txheej Semiceraspecializes nyob rau hauv zus tau tej cov high-zooGaN Epitaxycov khaubncaws sab nraud povtseg, muab cov khoom tsis sib xws purity thiab kev ncaj ncees ntawm cov qauv. Cov khaubncaws sab nraud povtseg yog qhov tseem ceeb rau ntau yam kev siv, los ntawm lub zog hluav taws xob mus rau optoelectronics, qhov kev ua tau zoo dua thiab kev ntseeg siab yog qhov tseem ceeb. Peb cov txheej txheem kev loj hlob precision ua kom ntseeg tau tias txhua txheej GaN ua tau raws li cov qauv tsim nyog rau cov cuab yeej txiav.
Optimized rau EfficiencyCovGaN Epitaxymuab los ntawm Semicera tshwj xeeb yog tsim los txhim kho kev ua haujlwm ntawm koj cov khoom siv hluav taws xob. Los ntawm kev xa cov txheej txheem GaN uas tsis muaj qhov tsis zoo, siab dawb huv, peb ua kom cov khoom siv ua haujlwm ntawm ntau zaus thiab qhov hluav taws xob, nrog txo qis zog. Qhov kev ua kom zoo dua no yog qhov tseem ceeb rau cov ntawv thov xws li high-electron-mobility transistors (HEMTs) thiab lub teeb-emitting diodes (LEDs), qhov kev ua tau zoo yog qhov tseem ceeb.
Versatile Application Potential Semicera'sGaN Epitaxyyog ntau yam, catering rau ntau yam kev lag luam thiab kev siv. Txawm hais tias koj tab tom tsim lub zog amplifiers, RF Cheebtsam, lossis laser diodes, peb GaN epitaxial txheej muab lub hauv paus tsim nyog rau kev ua haujlwm siab, txhim khu kev qha. Peb cov txheej txheem tuaj yeem tsim kho kom tau raws li cov kev xav tau tshwj xeeb, kom ntseeg tau tias koj cov khoom ua tiav cov txiaj ntsig zoo.
Kev cog lus rau kev ua tau zooQuality yog lub hauv paus ntawmSemiceratxoj kev mus rauGaN Epitaxy. Peb siv cov thev naus laus zis ntawm kev loj hlob ntawm epitaxial thiab nruj tswj kev ntsuas los tsim GaN cov khaubncaws sab nraud povtseg uas ua rau pom kev zoo ib yam, qhov tsis xws luag, thiab cov khoom siv zoo dua. Qhov kev cog lus rau kev ua tau zoo ua kom ntseeg tau tias koj cov khoom siv tsis yog tsuas yog ua tau raws li tab sis dhau ntawm cov qauv kev lag luam.
Txoj Kev Loj Hlob Tshiab Semicerayog nyob rau hauv lub forefront ntawm innovation nyob rau hauv lub teb ntawmGaN Epitaxy. Peb pab neeg tsis tu ncua tshawb nrhiav cov txheej txheem tshiab thiab thev naus laus zis los txhim kho cov txheej txheem kev loj hlob, xa GaN cov khaubncaws sab nraud povtseg nrog kev txhim kho hluav taws xob thiab thermal yam ntxwv. Cov kev hloov tshiab no txhais ua cov cuab yeej ua tau zoo dua, muaj peev xwm ua tau raws li qhov xav tau ntawm cov ntawv thov txuas ntxiv mus.
Customized Solutions rau Koj Cov HaujlwmPom tau tias txhua qhov project muaj cov kev cai tshwj xeeb,Semiceramuaj customizedGaN Epitaxykev daws teeb meem. Txawm hais tias koj xav tau cov ntaub ntawv tshwj xeeb doping, txheej thicknesses, lossis nto tiav, peb ua haujlwm nrog koj los tsim cov txheej txheem uas ua tau raws li koj cov kev xav tau. Peb lub hom phiaj yog muab rau koj nrog GaN cov khaubncaws sab nraud povtseg uas raug tsim los txhawb koj lub cuab yeej kev ua tau zoo thiab kev ntseeg tau.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
