Semiconductor muab cov txheej txheem ntawm kev kos duabSiC siv lead ualoj hlob siv ib tug heev npaumPVT method. Los ntawm kev sivCVD-SiCregenerative blocks raws li SiC qhov chaw, peb tau ua tiav qhov kev loj hlob zoo kawg li ntawm 1.46 hli h-1, kom ntseeg tau cov khoom siv lead ua zoo tshaj plaws uas tsis tshua muaj microtubule thiab dislocation ntom. Cov txheej txheem tshiab no lav kev ua haujlwm siabSiC siv lead uatsim nyog rau kev thov hauv kev lag luam hluav taws xob semiconductor.
SiC Crystal Parameter (Specification)
- Txoj kev loj hlob: Lub cev vapor thauj (PVT)
- Loj hlob tus nqi: 1.46 hli h-1
- Crystal zoo: siab, nrog tsawg microtubule thiab dislocation ceev
- Khoom siv: SiC (Silicon Carbide)
- Daim ntawv thov: High voltage, siab zog, high-frequency daim ntaub ntawv
SiC Crystal Feature Thiab Daim Ntawv Thov
Semiconductor's SiC siv lead uayog zoo tagnrho rauhigh-performance semiconductor siv. Qhov dav bandgap semiconductor khoom yog zoo meej rau high voltage, siab zog, thiab high-frequency daim ntaub ntawv. Peb cov khoom siv lead ua yog tsim los ua kom tau raws li cov qauv nruj tshaj plaws, ua kom muaj kev ntseeg siab thiab ua haujlwm zoo hauvKev siv hluav taws xob semiconductor.
SiC Crystal Paub meej
Siv crushedCVD-SiC blocksraws li cov khoom siv, pebSiC siv lead uanthuav tawm superior zoo piv rau cov pa txoj kev. Cov txheej txheem PVT siab heev txo qhov tsis xws luag xws li cov pa roj carbon inclusions thiab tswj cov qib purity siab, ua rau peb cov khoom siv lead ua zoo raucov txheej txheem semiconductoryuav tsum muaj precision heev.
