High quality MOCVD Substrate rhaub

High quality MOCVD Substrate Heater Featured duab

Lus piav qhia luv luv:

Semicera Energy Technology Co., Ltd. yog ib lub chaw muag khoom tshwj xeeb hauv wafer thiab qib siab semiconductor consumables.Peb mob siab rau muab cov khoom zoo, txhim khu kev qha, thiab cov khoom tshiab rau kev tsim khoom semiconductor,photovoltaic kev lag luamthiab lwm yam kev lag luam.

Peb cov khoom lag luam suav nrog SiC / TaC coated graphite cov khoom thiab cov khoom siv ceramic, suav nrog ntau yam ntaub ntawv xws li silicon carbide, silicon nitride, thiab txhuas oxide thiab lwm yam.

Raws li ib tus neeg muab kev ntseeg siab, peb nkag siab qhov tseem ceeb ntawm cov khoom siv hauv kev tsim khoom, thiab peb tau cog lus tias yuav xa cov khoom uas ua tau raws li cov qauv zoo tshaj plaws kom ua tiav peb cov neeg siv khoom xav tau.

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Khoom cim npe

Cov yam ntxwv tseem ceeb ntawm graphite rhaub:

1. uniformity ntawm cua sov qauv.

2. zoo hluav taws xob conductivity thiab siab hluav taws xob load.

3. corrosion kuj.

4. inoxidizability.

5. muaj tshuaj purity siab.

6. siab mechanical zog.

Qhov kom zoo dua yog lub zog txuag, tus nqi siab thiab kev saib xyuas qis. Peb tuaj yeem tsim los tiv thaiv oxidation thiab lub neej ntev ntev graphite crucible, graphite pwm thiab txhua qhov chaw ntawm graphite rhaub.

Main parameter ntawm graphite rhaub

Technical Specification	VET-M3
Qhov ceev (g / cm3)	≥1.85
Cov ntsiab lus tshauv (PPM)	≤500
Ntug Hardness	≥45
Kev Tiv Thaiv Tshwj Xeeb (μ.Ω.m)	≤12
Flexural zog (Mpa)	≥40
Compressive zog (Mpa)	≥70
Max. Grain Loj (μm)	≤ 43
Coefficient ntawm Thermal Expansion Mm/°C	≤ 4.4 * 10-6