InP thiab CdTe Substrate

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Semicera's InP thiab CdTe Substrate cov kev daws teeb meem yog tsim los rau kev ua haujlwm siab hauv kev lag luam semiconductor thiab hnub ci zog. Peb InP (Indium Phosphide) thiab CdTe (Cadmium Telluride) substrates muaj cov khoom tshwj xeeb, suav nrog kev ua haujlwm siab, hluav taws xob zoo heev, thiab muaj zog thermal stability. Cov substrates no zoo tagnrho rau siv nyob rau hauv cov khoom siv optoelectronic siab, high-frequency transistors, thiab nyias-film solar cells, muab lub hauv paus txhim khu kev qha rau cov thev naus laus zis.


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Khoom cim npe

Nrog Semicera'sInP thiab CdTe Substrate, koj tuaj yeem cia siab tias yuav ua tau zoo tshaj thiab precision engineered kom tau raws li cov kev xav tau tshwj xeeb ntawm koj cov txheej txheem tsim khoom. Txawm hais tias rau cov ntawv thov photovoltaic lossis cov khoom siv hluav taws xob semiconductor, peb cov substrates tau tsim los ua kom pom kev ua haujlwm zoo, ua haujlwm ntev, thiab sib xws. Raws li ib tus neeg muab kev ntseeg siab, Semicera tau cog lus los muab cov kev daws teeb meem zoo tshaj plaws, kho tau cov substrate uas tsav kev tsim kho tshiab hauv cov khoom siv hluav taws xob thiab hluav taws xob txuas ntxiv mus.

Crystalline thiab hluav taws xob khoom1

Hom
Dopant
PEB (cm-2) (Saib hauv qab no A.)
DF (tsis muaj teeb meem) cheeb tsam (cm2, Saib hauv qab B.)
c/ (c cm-3)
Mobilit (y cm2/Vs)
Resistivit (y Ω ・cm)
n
Sn
≦5 × 104
≦1 × 104
≦5 × 103
──────
 

(0.5-6) ​​× 1018
──────
──────
n
S
──────
≧ 10 (59.4%)
≧ 15 (87%).4
(2-10) × 1018
──────
──────
p
Zn
──────
≧ 10 (59.4%)
≧ 15 (87%).
(3-6) × 1018
──────
──────
SI
Fe
≦5 × 104
≦1 × 104
──────
──────
──────
≧ 1 × 106
n
tsis muaj
≦5 × 104
──────
≦1 × 1016
≧ 4 × 103
──────
1 Lwm yam specifications muaj nyob rau ntawm qhov kev thov.

A.13 Points Nruab Nrab

1. Dislocation etch pit densities yog ntsuas ntawm 13 ntsiab lus.

2. Cheeb tsam qhov hnyav nruab nrab ntawm qhov dislocation ntom yog xam.

B.DF Cheeb Tsam Kev Ntsuas (Thaum Thaj Tsam Guarantee)

1. Dislocation etch pit densities ntawm 69 cov ntsiab lus qhia raws li txoj cai raug suav.

2. DF txhais tau tias yog EPD tsawg dua 500cm-2
3. Qhov siab tshaj plaws DF cheeb tsam ntsuas los ntawm txoj kev no yog 17.25cm2
InP thiab CdTe Substrate (2)
InP thiab CdTe Substrate (1)
InP thiab CdTe Substrate (3)

InP Tib Crystal Substrates Common Specifications

1. Kev taw qhia
Kev taw qhia nto (100) ± 0.2º lossis (100) ± 0.05º
Surface off orientation muaj nyob rau thaum thov.
Kev taw qhia ntawm lub tiaj tiaj OF: (011) ± 1º lossis (011) ± 0.1º IF: (011) ± 2º
Cleaved OF yog muaj raws li qhov kev thov.
2. Laser npav raws li tus qauv SEMI muaj.
3. Cov pob ib leeg, nrog rau pob hauv N2 roj muaj.
4. Ech-and-pack nyob rau hauv N2 roj muaj.
5. Rectangular wafers muaj.
Cov lus qhia saum toj no yog ntawm JX' txuj.
Yog tias xav tau lwm yam specifications, thov nug peb.

Kev taw qhia

 

InP thiab CdTe Substrate (4) (1)
Semicera Chaw Ua Haujlwm
Semicera chaw ua haujlwm 2
Cov cuab yeej siv tshuab
CNN ua, tshuaj ntxuav, CVD txheej
Semicera Ware tsev
Peb qhov kev pabcuam

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