SEMICERA isostatic PECVD graphite nkoj yog lub siab-purity, high-density graphite khoom tsim los rau wafer txhawb nyob rau hauv PECVD (plasma enhanced tshuaj vapor deposition) txheej txheem. SEMICERA siv cov thev naus laus zis thev naus laus zis thev naus laus zis los xyuas kom meej tias lub nkoj graphite muaj qhov kub thiab txias tsis kam, tiv thaiv corrosion, qhov ruaj khov thiab zoo thermal conductivity, uas yog ib qho khoom siv tsis tau hauv cov txheej txheem semiconductor.
SEMICERA isostatic PECVD graphite nkoj muaj qhov zoo hauv qab no:
▪ High purity: Cov khoom siv graphite yog cov purity siab thiab tsis muaj impurity cov ntsiab lus kom tsis txhob muaj kab mob ntawm wafer nto.
▪ High density: High density, high mechanical zog, tuaj yeem tiv taus qhov kub thiab txias ib puag ncig.
▪ Kev ruaj ntseg zoo: qhov me me hloov pauv ntawm qhov kub thiab txias kom ntseeg tau tias cov txheej txheem ruaj khov.
▪ Cov thermal conductivity zoo heev: Hloov cov cua sov kom tiv thaiv wafer overheating.
▪ Muaj zog corrosion kuj: Muaj peev xwm tiv taus yaig los ntawm ntau yam corrosive gases thiab plasma.
Kev ua haujlwm parameter | semicera | SGL R6510 | Kev ua haujlwm parameter |
Qhov ceev (g / cm3) | 1.91 ib | 1.83 ib | 1.85 ib |
Bending zog (MPa) | 63 | 60 | 49 |
Compressive zog (MPa) | 135 | 130 | 103 |
Ntug Hardness (HS) | 70 | 64 | 60 |
Coefficient ntawm thermal expansion (10-6 / K) | 85 | 105 | 130 |
Coefficient ntawm thermal expansion (10-6 / K) | 5.85 ib | 4.2 | 5.0 |
Resistivity (μΩ) | 11-13 | 13 | 10 |
Qhov zoo ntawm kev xaiv peb:
▪ Kev xaiv cov khoom siv: Cov khoom siv graphite siab purity yog siv los ua kom cov khoom zoo.
▪ Kev siv thev naus laus zis: Isostatic nias yog siv los ua kom cov khoom ntom ntom thiab sib xws.
▪ Kev hloov kho qhov loj me: Graphite nkoj ntawm ntau qhov sib txawv thiab cov duab tuaj yeem hloov kho raws li cov neeg siv khoom xav tau.
▪ Kev kho deg: Muaj ntau txoj kev kho saum npoo, xws li txheej silicon carbide, boron nitride, thiab lwm yam, kom ua tau raws li cov txheej txheem sib txawv.