LiNbO3 Bonding wafer

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Lithium niobate siv lead ua tau zoo heev electro-optical, acousto-optical, piezoelectric, thiab nonlinear zog. Lithium niobate siv lead ua yog ib qho tseem ceeb multifunctional siv lead ua nrog zoo nonlinear optical zog thiab ib tug loj nonlinear optical coefficient; nws tseem tuaj yeem ua tiav qhov tsis sib haum xeeb theem. Raws li electro-optical siv lead ua, nws tau siv los ua cov khoom siv kho qhov muag tseem ceeb; Raws li lub piezoelectric siv lead ua, nws tuaj yeem siv los ua qhov nruab nrab thiab tsawg zaus SAW lim, lub zog siab-kub kub resistant ultrasonic transducers, thiab lwm yam. Doped lithium niobate cov ntaub ntawv kuj tau siv dav.

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Semicera's LiNbO3 Bonding Wafer yog tsim los ua kom tau raws li qhov xav tau ntawm kev tsim khoom semiconductor siab heev. Nrog nws cov khoom tshwj xeeb, suav nrog kev hnav zoo dua, kev ruaj ntseg siab thermal, thiab kev purity zoo, qhov wafer no zoo tagnrho rau siv rau hauv cov ntawv thov uas xav tau qhov tseeb thiab kev ua haujlwm ntev.

Hauv kev lag luam semiconductor, LiNbO3 Bonding Wafers feem ntau siv rau kev sib txuas cov txheej nyias hauv cov khoom siv optoelectronic, sensors, thiab ICs siab heev. Lawv muaj txiaj ntsig tshwj xeeb hauv photonics thiab MEMS (Micro-Electromechanical Systems) vim lawv cov khoom siv hluav taws xob zoo heev thiab muaj peev xwm tiv taus kev ua haujlwm hnyav. Semicera's LiNbO3 Bonding Wafer yog tsim los txhawb cov txheej txheem kev sib raug zoo, txhim kho tag nrho cov kev ua tau zoo thiab kev ntseeg siab ntawm cov khoom siv semiconductor.

Thermal thiab hluav taws xob khoom ntawm LiNbO3
Melting point	1250 ℃
Curie kub	1140 ℃
Thermal conductivity	38 W / m / K @ 25 ℃
Coefficient ntawm thermal expansion (@25 ° C)	//a, 2.0 × 10^-6/K //c, 2.2 × 10^-6/K
Kev tiv thaiv	2 × 10^-6Ω·cm @ 200 ℃
Dielectric tsis tu ncua	εS11/ε0=43, T11/ε0=78 εS33/ε0=28, T33/ε0= 2
Piezoelectric tsis tu ncua	D₂₂= 2.04 x 10^-11C/N D₃₃= 19.22 x 10^-11C/N
Electro-optic coefficient	γ T₃₃= 32pm/V, γS₃₃= 31 pm/V, γ T₃₁= 10 pm/V, γS₃₁= 8.6 pm/V, γ T₂₂= 6.8 pm/V, γS₂₂= 3.4 pm/V,
Ib nrab-yoj voltage, DC Fais teb // z, lub teeb ⊥ Z; Fais teb // x lossis y, lub teeb ⊥ z	3.03 kwm 4.02kv ua

Crafted siv cov ntaub ntawv zoo tshaj plaws, LiNbO3 Bonding Wafer ua kom muaj kev ntseeg tau zoo ib yam txawm tias nyob rau hauv cov xwm txheej hnyav. Nws lub siab thermal stability ua rau nws tshwj xeeb tshaj yog haum rau ib puag ncig uas muaj qhov kub thiab txias, xws li cov uas pom hauv cov txheej txheem semiconductor epitaxy. Tsis tas li ntawd, wafer lub siab purity ua kom muaj kev sib kis tsawg, ua rau nws muaj kev ntseeg siab rau kev siv cov khoom siv hluav taws xob tseem ceeb.

Ntawm Semicera, peb tau cog lus los muab kev lag luam-kev daws teeb meem. Peb LiNbO3 Bonding Wafer muab qhov tsis sib haum xeeb thiab muaj peev xwm ua tau zoo rau cov ntawv thov uas xav tau siab purity, hnav tsis kam, thiab thermal stability. Txawm hais tias rau cov khoom siv semiconductor siab heev lossis lwm yam thev naus laus zis tshwj xeeb, qhov wafer no ua haujlwm tseem ceeb rau kev tsim khoom siv.