Semicera's P-type SiC Substrate Wafer yog ib qho tseem ceeb ntawm kev tsim cov khoom siv hluav taws xob thiab optoelectronic siab heev. Cov wafers no tau tsim tshwj xeeb los muab kev txhim kho kev ua tau zoo nyob rau hauv high-power thiab high-temperature ib puag ncig, txhawb kev loj hlob thov rau cov khoom siv tau zoo thiab ruaj khov.
P-hom doping hauv peb SiC wafers ua kom cov hluav taws xob ua tau zoo dua qub thiab them tus neeg nqa khoom mus. Qhov no ua rau lawv tshwj xeeb tshaj yog haum rau cov ntawv thov hauv hluav taws xob hluav taws xob, LEDs, thiab cov cell photovoltaic, qhov twg tsis muaj hluav taws xob poob thiab kev ua haujlwm siab yog qhov tseem ceeb.
Tsim nrog cov qauv siab tshaj plaws ntawm kev ua tau zoo thiab zoo, Semicera's P-type SiC wafers muab qhov zoo sib xws ntawm qhov sib xws thiab qhov tsis xws luag. Cov yam ntxwv no yog qhov tseem ceeb rau kev lag luam uas qhov sib xws thiab kev ntseeg tau yog qhov tseem ceeb, xws li aerospace, tsheb, thiab hluav taws xob txuas ntxiv mus.
Semicera kev cog lus rau kev tsim kho tshiab thiab kev ua tau zoo yog pom tseeb hauv peb P-hom SiC Substrate Wafer. Los ntawm kev sib koom ua ke cov wafers no rau hauv koj cov txheej txheem tsim khoom, koj xyuas kom meej tias koj cov cuab yeej tau txais txiaj ntsig los ntawm qhov tshwj xeeb thermal thiab hluav taws xob ntawm SiC, ua rau lawv ua haujlwm tau zoo nyob rau hauv cov xwm txheej nyuaj.
Kev nqis peev hauv Semicera's P-hom SiC Substrate Wafer txhais tau hais tias xaiv cov khoom lag luam uas sib txuas cov khoom siv kev tshawb fawb nrog kev ua haujlwm zoo. Semicera muaj nplooj siab los txhawb cov tiam tom ntej ntawm hluav taws xob thiab optoelectronic technologies, muab cov khoom tseem ceeb uas xav tau rau koj txoj kev vam meej hauv kev lag luam semiconductor.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Lub hauv paus tiaj tus taw qhia | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
