CVD Cov Silicon Carbide (SiC)
Txheej txheem cej luam:CVDbulk silicon carbide (SiC)yog cov khoom siv zoo heev hauv cov khoom siv plasma etching, kev siv ceev ceev thermal (RTP), thiab lwm yam kev tsim khoom semiconductor. Nws cov khoom tshwj xeeb, tshuaj lom neeg, thiab thermal ua rau nws yog ib qho khoom siv zoo tshaj plaws rau kev siv thev naus laus zis uas xav tau siab precision thiab kav ntev.
Daim ntawv thov ntawm CVD Bulk SiC:Bulk SiC yog qhov tseem ceeb hauv kev lag luam semiconductor, tshwj xeeb tshaj yog nyob rau hauv plasma etching systems, qhov twg cov khoom xws li tsom rings, roj da dej, ntug rings, thiab platens tau txais txiaj ntsig los ntawm SiC qhov zoo heev corrosion kuj thiab thermal conductivity. Nws siv txuas mus rauRTPsystems vim SiC lub peev xwm tiv taus kub hloov pauv sai yam tsis muaj kev puas tsuaj loj.
Ntxiv nrog rau cov khoom siv etching, CVDloj SiCyog nyiam nyob rau hauv diffusion furnaces thiab siv lead ua kev loj hlob txheej txheem, qhov twg siab thermal stability thiab tsis kam mus rau hnyav tshuaj ib puag ncig yuav tsum tau. Cov cwj pwm no ua rau SiC cov khoom ntawm kev xaiv rau cov ntawv thov uas muaj qhov kub thiab txias, xws li cov chlorine thiab fluorine.
Qhov zoo ntawm CVD Bulk SiC Cheebtsam:
•High Density:Nrog rau qhov ceev ntawm 3.2 g / cm³,CVD bulk SiCCheebtsam yog heev resistant rau hnav thiab mechanical cuam tshuam.
•Superior Thermal conductivity:Muab cov thermal conductivity ntawm 300 W / m·K, bulk SiC zoo tswj cov cua sov, ua rau nws zoo tagnrho rau cov khoom raug rau huab cua kub.
•Exceptional Chemical Resistance:Qhov tsawg reactivity ntawm SiC nrog etching gases, nrog rau cov tshuaj chlorine thiab fluorine-raws li tshuaj, ua kom lub neej ntev.
•Adjustable Resistivity: CVD bulk SiCresistivity tuaj yeem hloov kho nyob rau hauv thaj tsam ntawm 10⁻²-10⁴ Ω-cm, ua rau nws hloov tau rau cov kev xav tau tshwj xeeb thiab cov khoom siv semiconductor.
•Thermal Expansion Coefficient:Nrog rau thermal expansion coefficient ntawm 4.8 x 10⁻⁶ / ° C (25-1000 ° C), CVD bulk SiC tiv thaiv thermal shock, tswj qhov seem stability txawm tias thaum lub sij hawm cua kub ceev thiab cua txias.
•Durability hauv Plasma:Kev raug rau cov ntshav plasma thiab cov pa roj reactive yog yam tsis muaj nyob hauv cov txheej txheem semiconductor, tab sisCVD bulk SiCmuaj superior tiv thaiv corrosion thiab degradation, txo kev hloov zaus thiab tag nrho cov nqi tu.
Technical Specifications:
•Txoj kab uas hla:Ntau tshaj 305 mm
•Kev tiv thaiv:Adjustable nyob rau hauv 10⁻²-10⁴ Ω-cm
•Ceev:3.2 g / cm³
•Thermal conductivity:300 W/m·K
•Thermal Expansion Coefficient:4.8 x 10⁻⁶ / °C (25-1000 ° C)
Customization thiab Flexibility:NtawmSemiconductor, peb nkag siab tias txhua daim ntawv thov semiconductor yuav xav tau cov kev qhia tshwj xeeb. Tias yog vim li cas peb CVD bulk SiC Cheebtsam yog tag nrho customizable, nrog adjustable resistivity thiab tailored qhov ntev kom haum koj cov khoom xav tau kev pab. Txawm hais tias koj tab tom ua kom zoo dua koj lub tshuab plasma etching lossis nrhiav cov khoom ruaj khov hauv RTP lossis cov txheej txheem diffusion, peb CVD bulk SiC muab kev ua haujlwm tsis sib xws.
