Silicon Carbide Coated Barrel Susceptor rau Wafer Epitaxial

Lus piav qhia luv luv:

Semicera muaj ntau yam ntawm susceptors thiab graphite Cheebtsam tsim rau ntau yam epitaxy reactors.

Los ntawm kev koom tes nrog kev koom tes nrog kev lag luam ua lag luam OEMs, kev paub txog cov ntaub ntawv dav dav, thiab cov peev txheej tsim khoom siab heev, Semicera muab cov qauv tsim kom tau raws li qhov tshwj xeeb ntawm koj daim ntawv thov. Peb txoj kev mob siab rau kev ua tau zoo ua kom ntseeg tau tias koj tau txais cov kev daws teeb meem zoo tshaj plaws rau koj cov kev xav tau ntawm epitaxy reactor.

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Product Detail

Khoom cim npe

Peb lub tuam txhab muabSiC txheejtxheej txheem kev pab cuam nyob rau saum npoo ntawm graphite, ceramics thiab lwm yam ntaub ntawv los ntawm CVD txoj kev, kom tshwj xeeb gases uas muaj cov pa roj carbon thiab silicon react ntawm kub kom tau high-purity Sic molecules, uas yuav muab tso rau saum npoo ntawm cov ntaub ntawv coated los tsim ib tugSiC tiv thaiv txheejrau epitaxy chim hom hy pnotic.

Cov yam ntxwv tseem ceeb:

1.High purity SiC coated graphite

2. Superior tshav kub tsis kam & thermal uniformity

3. ZooSiC siv lead ua coatedrau ib tug du nto

4. High durability tiv thaiv tshuaj ntxuav

SiC Coated Barrel Susceptor rau Wafer Epitaxial

Main Specifications ntawmCVD-SIC txheej

SiC-CVD Properties
Crystal Structure	FCC β theem
Qhov ntom	g / cm³	3.21
Hardness	Vickers hardness	2500
Loj Loj	ib m	2 ~ 10
Tshuaj Purity	%	99.999 5
Thaum tshav kub kub muaj peev xwm	J·kg-1 · K-1	640
Sublimation kub	℃	2700 ib
Felexural zog	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt khoov, 1300 ℃)	430
Thermal Expansion (CTE)	10-6K-1	4.5
Thermal conductivity	(W / mK)	300