Yog Epitaxy

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Yog Epitaxy- Ua tiav cov cuab yeej ua tau zoo tshaj plaws nrog Semicera's Si Epitaxy, muab cov txheej txheem loj-loj silicon rau cov ntawv siv semiconductor siab heev.


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Semiceraqhia nws cov khoom zooYog Epitaxycov kev pabcuam, tsim kom tau raws li cov qauv kev xav tau ntawm kev lag luam semiconductor niaj hnub no. Epitaxy silicon txheej yog ib qho tseem ceeb rau kev ua tau zoo thiab kev ntseeg siab ntawm cov khoom siv hluav taws xob, thiab peb cov kev daws teeb meem Si Epitaxy xyuas kom meej tias koj cov khoom ua tau zoo tshaj plaws.

Precision-Grown Silicon Layers Semicerankag siab tias lub hauv paus ntawm cov cuab yeej ua haujlwm siab nyob hauv qhov zoo ntawm cov khoom siv. PebYog Epitaxytxheej txheem yog meticulously tswj los tsim silicon txheej nrog exceptional uniformity thiab siv lead ua kev ncaj ncees. Cov khaubncaws sab nraud povtseg no yog qhov tseem ceeb rau cov ntawv thov xws li microelectronics mus rau cov khoom siv hluav taws xob siab, qhov kev sib xws thiab kev ntseeg siab yog qhov tseem ceeb.

Optimized rau Device PerformanceCovYog EpitaxyCov kev pabcuam uas muaj los ntawm Semicera yog tsim los txhim kho cov khoom hluav taws xob ntawm koj cov khoom siv. Los ntawm kev loj hlob ntawm high-purity silicon cov khaubncaws sab nraud povtseg uas tsis muaj qhov tsis xws luag, peb xyuas kom meej tias koj cov khoom ua tau zoo tshaj plaws, nrog rau kev txhim kho cov cab kuj thiab txo cov hluav taws xob tiv thaiv. Qhov kev ua kom zoo dua no yog qhov tseem ceeb rau kev ua tiav cov yam ntxwv siab ceev thiab ua haujlwm siab xav tau los ntawm cov cuab yeej siv niaj hnub no.

Versatility nyob rau hauv daim ntawv thov Semicera'sYog Epitaxyyog tsim rau ntau yam kev siv, suav nrog kev tsim cov CMOS transistors, fais fab MOSFETs, thiab bipolar junction transistors. Peb cov txheej txheem hloov pauv tau tso cai rau kev hloov kho raws li cov kev xav tau tshwj xeeb ntawm koj qhov project, txawm tias koj xav tau cov txheej nyias nyias rau cov ntawv thov ntau zaus lossis cov txheej tuab rau cov khoom siv hluav taws xob.

Superior Material QualityKev ua tau zoo yog nyob hauv plawv ntawm txhua yam peb ua ntawm Semicera. PebYog Epitaxytxheej txheem siv cov cuab yeej siv hauv xeev thiab cov txheej txheem los xyuas kom meej tias txhua txheej silicon ua tau raws li cov qauv siab tshaj plaws ntawm purity thiab kev ncaj ncees. Qhov kev mloog rau kev nthuav dav no txo ​​qis qhov tshwm sim ntawm qhov tsis xws luag uas tuaj yeem cuam tshuam kev ua haujlwm ntawm cov cuab yeej, uas ua rau cov khoom siv txhim khu kev qha thiab siv tau ntev dua.

Kev cog lus rau Innovation Semiceratau cog lus tias yuav nyob ntawm qhov ua ntej ntawm semiconductor technology. PebYog Epitaxycov kev pabcuam cuam tshuam txog qhov kev cog lus no, suav nrog kev nce qib tshiab hauv cov txheej txheem kev loj hlob epitaxial. Peb txuas ntxiv kho peb cov txheej txheem kom xa cov txheej txheem silicon uas ua tau raws li cov kev xav tau ntawm kev lag luam, kom ntseeg tau tias koj cov khoom tseem muaj kev sib tw hauv kev lag luam.

Kev daws teeb meem rau koj xav tauNkag siab tias txhua qhov project yog qhov tshwj xeeb,Semiceramuaj customizedYog Epitaxykev daws teeb meem kom phim koj cov kev xav tau tshwj xeeb. Txawm hais tias koj xav tau tshwj xeeb doping profiles, txheej thicknesses, los yog nto tiav, peb pab neeg ua hauj lwm nyob ze nrog koj kom xa cov khoom uas ua tau raws li koj cov lus qhia meej.

Cov khoom

Ntau lawm

Kev tshawb fawb

Dummy

Crystal Parameters

Polytype

4H

Deg orientation yuam kev

11-20 > 4 ± 0.15 °

Hluav taws xob Parameters

Dopant

n-hom Nitrogen

Kev tiv thaiv

0.015-0.025ohm · cm

Mechanical Parameters

Txoj kab uas hla

150.0 ± 0.2 hli

Thickness

350 ± 25 hli

Thawj qhov chaw tiaj tiaj

[1-100] ± 5°

Thawj lub tiaj tiaj ntev

47.5 ± 1.5 hli

Secondary flat

Tsis muaj

TTV

≤ 5 hli

≤10 hli

≤ 15 hli

LTV

≤ 3 μm (5mm * 5mm)

≤ 5 μm (5mm * 5mm)

≤ 10 μm (5mm * 5mm)

Hneev

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤ 35 hli

≤ 45 hli

≤ 55 hli

Pem hauv ntej (Si-face) roughness (AFM)

Ra≤0.2nm (5μm * 5μm)

Qauv

Micropipe ceev

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Hlau impurities

≤5E10 atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Pem hauv ntej zoo

Pem hauv ntej

Si

Nto tiav

Lub ntsej muag CMP

Cov khoom

≤60ea / wafer (qhov loj ≥0.3μm)

NA

Kos

≤5ea / hli Kev sib sau ntev ≤ Diameter

Qhov ntev ≤2 * Txoj kab uas hla

NA

Txiv kab ntxwv tev / pits / stains / striations / tawg / paug

Tsis muaj

NA

Ntug chips / indents / tawg / hex daim hlau

Tsis muaj

Polytype cheeb tsam

Tsis muaj

Thaj tsam ≤ 20%

Thaj tsam ≤ 30%

Pem hauv ntej laser npav

Tsis muaj

Back Quality

Rov qab ua tiav

C-ntsej muag CMP

Kos

≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla

NA

Back defects (ntug chips / indents)

Tsis muaj

Rov qab roughness

Ra≤0.2nm (5μm * 5μm)

Rov qab laser npav

1mm (los ntawm sab saum toj ntug)

Ntug

Ntug

Chamfer

Ntim

Ntim

Epi-npaj nrog lub tshuab nqus tsev ntim

Multi-wafer cassette ntim

* Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD.

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SiC wafers

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