Product Description
4h-n 4inch 6inch dia100mm sic noob wafer 1mm thickness rau ingot loj hlob
Customzied loj / 2inch / 3inch / 4inch / 6inch 6H-N / 4H-SEMI / 4H-N SIC ingots / High purity 4H-N 4inch 6inch dia 150mm silicon carbide ib leeg siv lead ua (sic) substrates wafersS / Customzied as-cuts sic wafers Qib 4H-N 1.5mm SIC Wafers rau noob siv lead ua
Hais txog Silicon Carbide (SiC) Crystal
Silicon carbide (SiC), tseem hu ua carborundum, yog ib qho semiconductor uas muaj silicon thiab carbon nrog tshuaj formula SiC. SiC yog siv rau hauv cov khoom siv hluav taws xob semiconductor uas ua haujlwm ntawm qhov kub thiab txias, los yog ob qho tib si.SiC kuj yog ib qho tseem ceeb ntawm LED Cheebtsam, nws yog ib tug nrov substrate rau loj hlob GaN pab kiag li lawm, thiab nws kuj ua hauj lwm raws li ib tug tshav kub kis nyob rau hauv high- LEDs zog.
Kev piav qhia
| Khoom | 4H-SiC, Ib Leeg Crystal | 6H-SiC, Ib Leeg Crystal |
| Lattice Parameters | a = 3.076 Å c = 10.053 Å | a = 3.073 Å c = 15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Qhov ntom | 3.21 g / cm3 | 3.21 g / cm3 |
| Therm. Expansion Coefficient | 4-5 × 10-6 / K | 4-5 × 10-6 / K |
| Refraction Index @ 750nm | nr = 2.61 | nr = 2.60 |
| Dielectric tsis tu ncua | c 9,66 ua | c 9,66 ua |
| Thermal conductivity (N-hom, 0.02 ohm.cm) | ib ~ 4.2 W/cm·K@298K |
|
| Thermal conductivity (Semi-insulating) | ib ~ 4.9 W/cm·K@298K | ib ~ 4.6 W/cm·K@298K |
| Band-gap | 3, 23 eV | 3, 02 eV |
| Break-down Electrical Field | 3-5 × 106V / cm3 | 3-5 × 106V / cm3 |
| Saturation Drift Velocity | 2.0 × 105m / s | 2.0 × 105m / s |
