Silicon carbide cantilever paddle

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Silicon carbide paddle, tseem hu ua silicon carbide cantilever paddle, silicon carbide cantilever beam yog ib yam ntawm silicon carbide ceramic khoom tom qab 1850.℃kub sintering, tab sis kub sintering silicon carbide ceramic yog ib yam khoom tshwj xeeb ceramic, los ntawm cov khoom zoo.α-SiC thiab additives nias rau hauv qhov khoob, nyob rau hauv kev sib cuag nrog cov kua silicon ntawm qhov kub thiab txias, carbon nyob rau hauv qhov khoob thiab infiltration ntawm Si cov tshuaj tiv thaiv, tsim ntawmβ-SiC,Thiab ua ke nrog α-SiC, silicon dawb puv lub porosity, thiaj li kom tau txais cov khoom siv ceramic siab ceev; Nws muaj ntau yam superior zog ntawm industrial ceramics.

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SiC Cantilever paddleyog siv nyob rau hauv diffusion txheej rauv ntawm lub photovoltaic kev lag luam rau txheej monocrystalline thiab polycrystalline silicon wafers. Nws cov yam ntxwv ua rau nws tiv taus kub thiab corrosion, muab nws lub neej ntev.
CovSiC Cantilever paddlexa SiC nkoj / quartz nkoj uas nqa silicon wafers rau hauv qhov kub kub diffusion txheej rauv tube.
Qhov ntev ntawm pebSiC Cantilever paddleQhov ntev ntawm 1,500 txog 3,500 mm.SiC Cantilever paddlesdimension tuaj yeem ua raws li tus neeg siv khoom specification.

Lub cev muaj zog ntawm Recrystalized Silicon Carbide
Khoom	Tus nqi
Ua haujlwm kub (°C)	1600 ° C (nrog oxygen), 1700 ° C (txo ib puag ncig)
SiC cov ntsiab lus	> 99.96%
Dawb Si cov ntsiab lus	<0.1%
Qhov ntom ntom	2.60-2.70 g / cm3³
Pom tseeb porosity	<16%
Compression zog	> 600 MPa
Txias dabtsi yog khoov zog	80-90 MPa (20 ° C)
Kub dabtsi yog khoov zog	90-100 MPa (1400 ° C)
Thermal expansion @ 1500 ° C	4.70 10^-6/°C
Thermal conductivity @ 1200 ° C	23 W/m•K
Elastic modulus	240 GPa
Thermal shock tsis kam	Zoo heev