Lub SemiceraSiC Cantilever Wafer Paddleyog tsim los ua kom tau raws li qhov xav tau ntawm kev tsim khoom niaj hnub semiconductor. Qhov nowafer paddlemuaj cov neeg kho tshuab zoo heev thiab thermal kuj, uas yog ib qho tseem ceeb rau tuav wafers nyob rau hauv high-temperature ib puag ncig.
Lub SiC cantilever tsim ua kom muaj qhov tseeb wafer tso, txo qhov kev pheej hmoo ntawm kev puas tsuaj thaum tuav. Nws cov thermal conductivity siab ua kom ntseeg tau tias cov wafer tseem nyob ruaj khov txawm tias nyob rau hauv cov xwm txheej huab cua, uas yog qhov tseem ceeb rau kev tswj hwm kev tsim khoom.
Ntxiv nrog rau nws cov qauv zoo, Semicera'sSiC Cantilever Wafer Paddlekuj muaj qhov zoo ntawm qhov hnyav thiab kav ntev. Kev tsim kho lub teeb ua kom yooj yim rau kev tswj hwm thiab sib koom ua ke rau hauv cov txheej txheem uas twb muaj lawm, thaum cov khoom siv SiC high-density ua kom muaj kev ruaj ntseg ntev nyob rau hauv kev xav tau.
| Lub cev muaj zog ntawm Recrystalized Silicon Carbide | |
| Khoom | Tus nqi |
| Ua haujlwm kub (°C) | 1600 ° C (nrog oxygen), 1700 ° C (txo ib puag ncig) |
| SiC cov ntsiab lus | > 99.96% |
| Dawb Si cov ntsiab lus | <0.1% |
| Qhov ntom ntom | 2.60-2.70 g / cm33 |
| Pom tseeb porosity | <16% |
| Compression zog | > 600 MPa |
| Txias dabtsi yog khoov zog | 80-90 MPa (20 ° C) |
| Kub dabtsi yog khoov zog | 90-100 MPa (1400 ° C) |
| Thermal expansion @ 1500 ° C | 4.70 10-6/°C |
| Thermal conductivity @ 1200 ° C | 23 W/m•K |
| Elastic modulus | 240 GPa |
| Thermal shock tsis kam | Zoo heev |
