Silicon carbide yog ib hom hluavtaws carbide nrog SiC molecule. Thaum muaj zog, silica thiab carbon feem ntau yog tsim los ntawm qhov kub siab tshaj 2000 ° C. Silicon carbide muaj qhov theoretical ntom ntawm 3.18g / cm3, Mohs hardness ua raws li pob zeb diamond, thiab microhardness ntawm 3300kg / mm3 ntawm 9.2 thiab 9.8. Vim nws lub siab tawv thiab hnav tsis kam, nws muaj cov yam ntxwv ntawm qhov kub thiab txias thiab yog siv rau ntau yam hnav-resistant, corrosion-resistant thiab high-temperature mechanical qhov chaw. Nws yog ib yam tshiab ntawm hnav-resistant ceramic technology.
1 、 Cov khoom siv tshuaj.
(1) Oxidation tsis kam: Thaum cov khoom siv silicon carbide tau rhuab mus rau 1300 ° C hauv huab cua, cov txheej txheem tiv thaiv silicon dioxide pib tsim rau saum npoo ntawm nws cov silicon carbide siv lead ua. Nrog lub thickening ntawm cov txheej txheem tiv thaiv, sab hauv silicon carbide txuas ntxiv mus oxidize, kom cov silicon carbide muaj oxidation zoo. Thaum qhov kub siab tshaj 1900K (1627 ° C), silicon dioxide tiv thaiv zaj duab xis pib puas, thiab oxidation ntawm silicon carbide yog intensified, yog li 1900K yog qhov ua hauj lwm kub ntawm silicon carbide nyob rau hauv ib tug oxidizing cua.
(2) Acid thiab alkali tsis kam: vim yog lub luag haujlwm ntawm silicon dioxide tiv thaiv zaj duab xis, silicon carbide muaj lub luag haujlwm ntawm silicon dioxide tiv thaiv zaj duab xis.
2, Lub cev thiab txhua yam khoom.
(1) Qhov ntom ntom: Qhov ntom ntom ntawm ntau yam silicon carbide crystals yog ze heev, feem ntau suav tias yog 3.20g / mm3, thiab lub ntuj ntim ntom ntom ntawm silicon carbide abrasives yog nyob nruab nrab ntawm 1.2-1.6g / mm3, nyob ntawm seb qhov loj me, particle loj muaj pes tsawg leeg thiab particle loj duab.
(2) Hardness: Mohs hardness ntawm silicon carbide yog 9.2, micro-density ntawm Wessler yog 3000-3300kg / mm2, hardness ntawm Knopp yog 2670-2815kg / mm, lub abrasive yog siab tshaj corundum, ze rau pob zeb diamond, cubic boron nitride thiab boron carbide.
(3) Thermal conductivity: silicon carbide cov khoom muaj thermal conductivity, me me thermal expansion coefficient, siab thermal shock resistance, thiab yog cov khoom zoo refractory.
3 、 Cov khoom siv hluav taws xob.
| Yam khoom | Chav tsev | Cov ntaub ntawv | Cov ntaub ntawv | Cov ntaub ntawv | Cov ntaub ntawv | Cov ntaub ntawv |
| RBsic (sisic) | NBSiC | SIB | RSiC | OSiC | ||
| SiC cov ntsiab lus | % | 85 | 76 | 99 | ≥99 | ≥90 |
| Dawb silicon ntsiab lus | % | 15 | 0 | 0 | 0 | 0 |
| Max kev pab kub | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Qhov ntom | g/cm^3 | 3.02 ib | 2.75-2.85 Nws | 3.08-3.16 Nws | 2.65-2.75 Nws | 2.75-2.85 Nws |
| Qhib porosity | % | 0 | 13-15 | 0 | 15-18 | 7–8 |
| Bending zog 20 ℃ | Mpa | 250 | 160 | 380 | 100 | / |
| Bending zog 1200 ℃ | Mpa | 280 | 180 | 400 | 120 | / |
| Modulus ntawm elasticity 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus ntawm elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200 ℃ | W/mk | 45 | 19.6 ib | 100-120 | 36.6 ib | / |
| Coefficient ntawm thermal expansion | K^-lx10^-8 | 4.5 | 4.7 | 4.1 | 4.69 ib | / |
| HV | kg/m^2 | 2115 | / | 2800 | / | / |
