Semicera's 6 Nti N-hom SiC Wafer sawv ntawm lub hauv ntej ntawm semiconductor technology. Crafted rau kev pom kev ua tau zoo, qhov wafer no ua tau zoo nyob rau hauv high-power, high-frequency, thiab high-temperature applications, tseem ceeb rau cov khoom siv hluav taws xob siab heev.
Peb 6 Nti N-hom SiC wafer nta lub zog hluav taws xob siab thiab tsis tshua muaj kev ua haujlwm, uas yog qhov tseem ceeb rau cov khoom siv hluav taws xob xws li MOSFETs, diodes, thiab lwm yam khoom siv. Cov khoom no ua kom lub zog hloov pauv tau zoo thiab txo qis kev tsim hluav taws xob, txhim kho kev ua haujlwm thiab kev ua neej nyob ntawm cov tshuab hluav taws xob.
Semicera cov txheej txheem tswj kev ua tau zoo kom ntseeg tau tias txhua SiC wafer tswj xyuas qhov zoo ntawm qhov chaw tiaj tus thiab qhov tsis xws luag. Qhov kev ua tib zoo saib xyuas kom meej kom paub meej tias peb cov wafers ua tau raws li cov kev cai nruj ntawm kev lag luam xws li tsheb, aerospace, thiab kev sib txuas lus.
Ntxiv rau nws cov khoom siv hluav taws xob zoo tshaj plaws, N-hom SiC wafer muaj kev ruaj ntseg thermal stability thiab tsis kam mus rau qhov kub thiab txias, ua rau nws zoo tagnrho rau ib puag ncig uas cov khoom siv tsis zoo. Qhov kev muaj peev xwm no tseem ceeb tshwj xeeb hauv cov ntawv thov uas cuam tshuam nrog kev ua haujlwm siab thiab lub zog siab.
Los ntawm kev xaiv Semicera's 6 Nti N-hom SiC Wafer, koj tab tom nqis peev hauv cov khoom lag luam uas sawv cev rau qhov kawg ntawm kev hloov pauv ntawm semiconductor. Peb tau cog lus los muab cov cuab yeej tsim kho rau cov cuab yeej txiav, kom ntseeg tau tias peb cov neeg koom tes hauv ntau qhov kev lag luam muaj kev nkag tau mus rau cov ntaub ntawv zoo tshaj plaws rau lawv cov kev siv technology.
| Cov khoom | Ntau lawm | Kev tshawb fawb | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Deg orientation yuam kev | 11-20 > 4 ± 0.15 ° | ||
| Hluav taws xob Parameters | |||
| Dopant | n-hom Nitrogen | ||
| Kev tiv thaiv | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Txoj kab uas hla | 150.0 ± 0.2 hli | ||
| Thickness | 350 ± 25 hli | ||
| Thawj qhov chaw tiaj tiaj | [1-100] ± 5° | ||
| Thawj lub tiaj tiaj ntev | 47.5 ± 1.5 hli | ||
| Secondary flat | Tsis muaj | ||
| TTV | ≤ 5 hli | ≤10 hli | ≤ 15 hli |
| LTV | ≤ 3 μm (5mm * 5mm) | ≤ 5 μm (5mm * 5mm) | ≤ 10 μm (5mm * 5mm) |
| Hneev | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤ 35 hli | ≤ 45 hli | ≤ 55 hli |
| Pem hauv ntej (Si-face) roughness (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Qauv | |||
| Micropipe ceev | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Hlau impurities | ≤5E10 atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Pem hauv ntej zoo | |||
| Pem hauv ntej | Si | ||
| Nto tiav | Lub ntsej muag CMP | ||
| Cov khoom | ≤60ea / wafer (qhov loj ≥0.3μm) | NA | |
| Kos | ≤5ea / hli Kev sib sau ntev ≤ Diameter | Qhov ntev ≤2 * Txoj kab uas hla | NA |
| Txiv kab ntxwv tev / pits / stains / striations / tawg / paug | Tsis muaj | NA | |
| Ntug chips / indents / tawg / hex daim hlau | Tsis muaj | ||
| Polytype cheeb tsam | Tsis muaj | Thaj tsam ≤ 20% | Thaj tsam ≤ 30% |
| Pem hauv ntej laser npav | Tsis muaj | ||
| Back Quality | |||
| Rov qab ua tiav | C-ntsej muag CMP | ||
| Kos | ≤5ea/mm, Qhov ntev ≤2 * Txoj kab uas hla | NA | |
| Back defects (ntug chips / indents) | Tsis muaj | ||
| Rov qab roughness | Ra≤0.2nm (5μm * 5μm) | ||
| Rov qab laser npav | 1mm (los ntawm sab saum toj ntug) | ||
| Ntug | |||
| Ntug | Chamfer | ||
| Ntim | |||
| Ntim | Epi-npaj nrog lub tshuab nqus tsev ntim Multi-wafer cassette ntim | ||
| * Lus Cim: "NA" txhais tau tias tsis muaj kev thov Cov khoom tsis tau hais txog yuav xa mus rau SEMI-STD. | |||
