GaAs Wafers|GaAs Epi Wafers| Galllium Arsenide Substrates

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Semicera Energy Technology Co., Ltd. yog ib lub chaw muag khoom tshwj xeeb hauv wafer thiab qib siab semiconductor consumables. Peb tau mob siab rau muab cov khoom zoo, txhim khu kev qha, thiab cov khoom tshiab rau kev tsim khoom semiconductor, kev lag luam photovoltaic thiab lwm yam kev lag luam.

Peb cov khoom lag luam suav nrog SiC / TaC coated graphite cov khoom thiab cov khoom siv ceramic, suav nrog ntau yam ntaub ntawv xws li silicon carbide, silicon nitride, thiab txhuas oxide thiab lwm yam.

Tam sim no, peb tsuas yog cov chaw tsim khoom los muab purity 99.9999% SiC txheej thiab 99.9% recrystallized silicon carbide. Qhov max SiC txheej ntev peb tuaj yeem ua 2640mm.

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GaAs substrates tau muab faib ua conductive thiab semi-insulating, uas yog dav siv nyob rau hauv laser (LD), semiconductor light-emitting diode (LED), ze-infrared laser, quantum zoo high-power laser thiab high-efficiency solar panels. HEMT thiab HBT chips rau radar, microwave, millimeter yoj los yog ultra-siab ceev computers thiab optical kev sib txuas lus; Xov tooj cua zaus khoom siv rau kev sib txuas lus wireless, 4G, 5G, satellite kev sib txuas lus, WLAN.

Tsis ntev los no, gallium arsenide substrates kuj ua tau zoo nyob rau hauv mini-LED, Micro-LED, thiab liab LED, thiab tau dav siv nyob rau hauv AR / VR wearable devices.

Txoj kab uas hla 晶片直径	50mm \| 75mm \| 100 hli \| 150 hli
Txoj Kev Loj Hlob 生长方式	LEC液封直拉法 VGF垂直梯度凝固法
Wafer Thickness 厚度	350 hli ~ 625 hli
Kev taw qhia 晶向	<100> / <111> / <110> lossis lwm yam
Hom kev coj 导电类型	P - hom / N - hom / Semi-insulating
Hom / Dopant 掺杂剂	Zn / Si / undoped
Carrier Concentration 载流子浓度	1E17 ~ 5E19 cm-3
Resistivity ntawm RT 室温电阻率(ohm •cm)	≥1E7 rau SI
Mobility 迁移率(cm2/V•Sec)	≥4000
EPD (Etch Pit Density) 腐蚀坑密度	100-1 E5
TTV 总厚度变化	≤ 10 hli
Hnyav / Warp 翘曲度	≤ 20 hli
Nto tiav 表面	DSP/SSP
Laser Mark 激光码
Qib 等级	Epi polished qib / mechanical qib