Silicon Carbide Substrates | SiC Wafers

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WeiTai Zog Technology Co., Ltd.Peb mob siab rau muab cov khoom zoo, txhim khu kev qha, thiab cov khoom tsim tshiab rau kev tsim khoom semiconductor, kev lag luam photovoltaic thiab lwm yam kev lag luam.

Peb cov khoom lag luam suav nrog SiC / TaC coated graphite cov khoom thiab cov khoom siv ceramic, suav nrog ntau yam ntaub ntawv xws li silicon carbide, silicon nitride, thiab txhuas oxide thiab lwm yam.

Tam sim no, peb tsuas yog cov chaw tsim khoom los muab purity 99.9999% SiC txheej thiab 99.9% recrystallized silicon carbide.Qhov max SiC txheej ntev peb tuaj yeem ua 2640mm.

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Khoom cim npe

Silicon carbide (SiC) ib qho khoom siv lead ua muaj qhov sib txawv loj ntawm qhov dav (~Si 3 zaug), thermal conductivity (~Si 3.3 npaug lossis GaAs 10 zaug), siab electron saturation migration rate (~Si 2.5 zaug), siab tawg hluav taws xob teb (~ Si 10 zaug lossis GaAs 5 zaug) thiab lwm yam zoo heev.

SiC cov cuab yeej muaj qhov zoo tshaj plaws nyob rau hauv qhov kub thiab txias, siab, siab zaus, siab zog hluav taws xob cov cuab yeej siv hluav taws xob thiab kev siv ib puag ncig zoo xws li aerospace, tub rog, nuclear zog, thiab lwm yam. kev siv, thiab maj mam dhau los ua lub ntsiab ntawm lub zog semiconductors.

4H-SiC Silicon carbide substrate specifications

Yam khoom 项目	Khoom Specifications
Polytype 晶型	4 H-SiC	6 H-SiC
Txoj kab uas hla 晶圆直径	2 nti \|3 nti \|4 nti \|6 nti	2 nti \|3 nti \|4 nti \|6 nti
Thickness 厚度	330 hli ~ 350 hli	330 hli ~ 350 hli
Kev coj ua 导电类型	N - hom / Semi-insulating N型导电片/ 半绝缘片	N - hom / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Nitrogen)V (Vanadium)	N2 ( Nitrogen ) V ( Vanadium )
Kev taw qhia 晶向	Ntawm axis <0001> Tawm axis <0001> tawm 4°	Ntawm axis <0001> Tawm axis <0001> tawm 4°
Kev tiv thaiv 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 hli (6 H-N)
Micropipe ntom ntom (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 hli	≤ 15 hli
Hnyav / Warp 翘曲度	≤ 25 hli	≤ 25 hli
Nto 表面处理	DSP/SSP	DSP/SSP
Qib 产品等级	Qib / Kev Tshawb Fawb	Qib / Kev Tshawb Fawb
Crystal Stacking Sequence 堆积方式	ABCB	ABCABC
Lattice parameter 晶格参数	ib = 3.076A, c=10.053A	ib = 3.073A, c=15.117A
Eg/eV(Band-gap) 禁带宽度	3, 27 eV	3, 02 eV
ε (Dielectric tsis tu ncua) 介电常数	9.6 ib	9.66 ib
Refraction Index 折射率	n0 = 2.719 ne = 2.777	n0 = 2.707, ne = 2.755

6H-SiC Silicon Carbide substrate specifications

Yam khoom 项目	Khoom Specifications
Polytype 晶型	6 H-SiC
Txoj kab uas hla 晶圆直径	4 nti \|6 nti
Thickness 厚度	350μm ~ 450μm
Kev coj ua 导电类型	N - hom / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Nitrogen) Vanadium (V)
Kev taw qhia 晶向	<0001> tawm 4° ± 0.5°
Kev tiv thaiv 电阻率	0.02 ~ 0.1 hli (6H-N Hom)
Micropipe ntom ntom (MPD) 微管密度	≤ 10 / cm2
TTV 总厚度变化	≤ 15 hli
Hnyav / Warp 翘曲度	≤ 25 hli
Nto 表面处理	Lub ntsej muag: CMP, Epi-Ready C Lub ntsej muag: Optical Polish
Qib 产品等级	Qib tshawb fawb