Gallium Nitride Substrates | GaN Wafers

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Gallium nitride (GaN), zoo li silicon carbide (SiC) cov ntaub ntawv, belongs rau tiam thib peb ntawm cov khoom siv semiconductor nrog cov kab sib txawv dav dav, nrog qhov sib txawv loj band, siab thermal conductivity, siab electron saturation migration npaum li cas, thiab siab tawg hluav taws xob teb zoo heev. yam ntxwv.GaN pab kiag li lawm muaj ntau yam ntawm daim ntawv thov kev cia siab nyob rau hauv high zaus, kev kub ceev thiab siab zog thov teb xws li LED zog-txuag teeb pom kev zoo, laser projection zaub, tshiab zog tsheb, ntse daim phiaj, 5G kev sib txuas lus.

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Cov khoom siv semiconductor thib peb feem ntau suav nrog SiC, GaN, pob zeb diamond, thiab lwm yam, vim tias nws qhov sib txawv ntawm qhov dav (piv txwv li) ntau dua lossis sib npaug rau 2.3 electron volts (eV), tseem hu ua wide band gap semiconductor cov ntaub ntawv. Piv nrog rau thawj thiab thib ob tiam semiconductor cov ntaub ntawv, lub thib peb tiam semiconductor cov ntaub ntawv muaj qhov zoo ntawm high thermal conductivity, siab tawg hluav taws xob teb, siab saturated electron migration tus nqi thiab siab bonding zog, uas yuav ua tau raws li cov kev cai tshiab ntawm niaj hnub electronics technology rau siab. kub, siab zog, siab siab, siab zaus thiab hluav taws xob tsis kam thiab lwm yam mob hnyav. Nws muaj qhov tseem ceeb ntawm daim ntawv thov kev cia siab nyob rau hauv kev tiv thaiv lub teb chaws, aviation, aerospace, roj kev tshawb nrhiav, kho qhov muag, thiab lwm yam, thiab tuaj yeem txo qis zog los ntawm ntau tshaj 50% hauv ntau qhov kev lag luam xws li kev sib txuas lus broadband, hnub ci zog, kev tsim tsheb, semiconductor teeb pom kev zoo, thiab daim phiaj ntse, thiab tuaj yeem txo cov khoom ntim ntau dua 75%, uas yog qhov tseem ceeb tshaj plaws rau kev loj hlob ntawm tib neeg kev tshawb fawb thiab tshuab.

Yam khoom 项目	GaN-FS-CU-C50	GaN-FS-CN-C50	GaN-FS-C-SI-C50
Txoj kab uas hla 晶圆直径	50.8 ± 1 hli
Thickness厚度	350 ± 25 μm
Kev taw qhia 晶向	C dav hlau (0001) tawm lub kaum sab xis mus rau M-axis 0.35 ± 0.15 °
Prime Flat 主定位边	(1-100) 0 ± 0.5 °, 16 ± 1 hli
Secondary Flat 次定位边	(11-20) 0 ± 3 °, 8 ± 1 hli
Kev coj ua 导电性	N-type	N-type	Semi-Insulating
Kev tiv thaiv (300K) 电阻率	<0.1 Ω·cm	<0.05 Ω·cm	> 106 Ω·cm
TTV 平整度	≤ 15 hli
HUV 弯曲度	≤ 20 hli
Lub ntsej muag nto Roughness Ga面粗糙度	<0.2nm (polished);
	los yog <0.3 nm (polished thiab nto kho rau epitaxy)
N Lub ntsej muag Roughness N面粗糙度	0.5 ~ 1.5 hli
	kev xaiv: 1 ~ 3 nm (zoo av); ≤0.2nm (polished)
Dislocation Ceev 位错密度	Los ntawm 1 x 105 mus rau 3 x 106 cm-2 (xws li CL) *
Macro Defect Density 缺陷密度	<2cm-2
Siv tau cheeb tsam 有效面积	> 90% (ntug thiab macro tsis xws luag cais tawm)
tuaj yeem kho raws li cov neeg siv khoom xav tau, cov qauv sib txawv ntawm silicon, sapphire, SiC raws li GaN epitaxial ntawv.