Silicon Thermal Oxide Wafer

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WeiTai Zog Technology Co., Ltd.Peb mob siab rau muab cov khoom zoo, txhim khu kev qha, thiab cov khoom tsim tshiab rau kev tsim khoom semiconductor, kev lag luam photovoltaic thiab lwm yam kev lag luam.

Peb cov khoom lag luam suav nrog SiC / TaC coated graphite cov khoom thiab cov khoom siv ceramic, suav nrog ntau yam ntaub ntawv xws li silicon carbide, silicon nitride, thiab txhuas oxide thiab lwm yam.

Tam sim no, peb tsuas yog cov chaw tsim khoom los muab purity 99.9999% SiC txheej thiab 99.9% recrystallized silicon carbide.Qhov max SiC txheej ntev peb tuaj yeem ua 2640mm.

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Lub thermal oxide txheej ntawm silicon wafer yog txheej oxide los yog silica txheej tsim rau ntawm qhov chaw liab qab ntawm silicon wafer nyob rau hauv qhov kub thiab txias nrog tus neeg sawv cev oxidizing.Lub thermal oxide txheej ntawm silicon wafer feem ntau yog zus nyob rau hauv kab rov tav raj rauv, thiab qhov kev loj hlob kub yog feem ntau 900 ° C ~ 1200 ° C, thiab muaj ob txoj kev loj hlob ntawm "ntub oxidation" thiab "dry oxidation".Thermal oxide txheej yog "loj" oxide txheej uas muaj ntau dua homogeneity thiab siab dua dielectric zog dua li CVD tso oxide txheej.Thermal oxide txheej yog ib qho zoo heev dielectric txheej raws li ib tug insulator.Hauv ntau cov khoom siv silicon, cov txheej txheem thermal oxide ua lub luag haujlwm tseem ceeb ua cov txheej txheem doping thaiv thiab nto dielectric.

Tswv yim: Hom Oxidation

1. Qhuav oxidation

Lub silicon reacts nrog oxygen, thiab oxide txheej txav mus rau basal txheej.Qhuav oxidation yuav tsum tau nqa tawm ntawm qhov kub ntawm 850 mus rau 1200 ° C, thiab qhov kev loj hlob yog tsawg, uas yuav siv tau rau MOS rwb thaiv tsev rooj vag loj hlob.Thaum lub siab zoo, ultra-nyias silicon oxide txheej yuav tsum tau, qhuav oxidation yog nyiam dua ntub oxidation.

Qhuav oxidation muaj peev xwm: 15nm ~ 300nm (150A ~ 3000A)

2. ntub oxidation

Txoj kev no siv cov khoom sib xyaw ntawm hydrogen thiab high-purity oxygen kom hlawv ntawm ~ 1000 ° C, yog li tsim cov dej vapor los ua ib txheej oxide.Txawm hais tias ntub oxidation tsis tuaj yeem tsim cov txheej txheem oxidation zoo li qhuav oxidation, tab sis txaus siv los ua ib qho chaw cais, piv rau qhuav oxidation muaj qhov zoo dua yog tias nws muaj kev loj hlob ntau dua.

Lub peev xwm oxidation ntub dej: 50nm ~ 15µm (500A ~ 15µm)

3. Txoj kev qhuav - txoj kev ntub - txoj kev qhuav

Nyob rau hauv txoj kev no, cov pa ntshiab qhuav tau tso rau hauv lub qhov cub oxidation ntawm thawj theem, hydrogen yog ntxiv nyob rau hauv nruab nrab ntawm oxidation, thiab hydrogen yog khaws cia nyob rau hauv lub kawg mus txuas ntxiv oxidation nrog ntshiab qhuav oxygen los tsim ib tug denser oxidation qauv dua. cov txheej txheem ntub dej oxidation nyob rau hauv daim ntawv ntawm chav dej.

4. TEOS oxidation

Cov txheej txheem oxidation 氧化工艺	oxidation ntub los yog qhuav oxidation 湿法氧化/干法氧化
Txoj kab uas hla 硅片直径	2 "/ 3" / 4 "/ 6" / 8 "/ 12" 英寸
Oxide Thickness 氧化层厚度	100 Å ~ 15µm 10nm ~ 15µm
Ua siab ntev 公差范围	+/- 5%
Nto 表面	Ib Sab Oxidation (SSO) / Ob Sab Oxidation (DSO) 单面氧化/双面氧化
Rauv 氧化炉类型	Kab rov tav raj rauv 水平管式炉
Roj 气体类型	Hydrogen thiab Oxygen gas 氢氧混合气体
Kub 氧化温度	900 ℃ ~ 1200 ℃ 900 ~ 1200 hli摄氏度
Refractive Index 折射率	1.456 ib